Fabrication and spectra characteristics of high efficiency white organic light-emitting diodes with single emitting layer

High-efficiency white organic light-emitting devices with single emitting layer are demonstrated. N,N‘-diphenyI-N,N‘-bis(1,1‘-biphenyl)-4,4‘-diamine (NPB) is used as hole transport layer, while 4,7-diphenyl-l,10-phenan-throline (BPhen) as electron transport layer and 9,10-di-(2-naphthyl)-2-terbutyl-anthracene (TADN) doped with the fluorescent dye 4-(dicyanomethylene)-2-t-buty1-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) (DCJTB) as single emissive layer. The effects of performance by the concentration of DCJTB and the thickness of emissive layer are studied. The device with a structure of indium tin oxide/NPB (50 nm)/TADN: 0.2% DCJTB (15 nm)/BPhen (40 nm)/Mg: Ag shows a maximum brightness of 11400 cd/m^2, a peak current efficiency of 5.6 cd/A and power efficiency of 4.1 Ira/W, while the low turn-on voltage of 3.1 V and the stability of the Commission International De L‘Eclairage coordinate. The spectra through color filter of the device are also studied.     

White organic light-emitting devices using Zn（BTZ）2 doped with Rubrene as emitting layer

Zn(BTZ)2 was synthesized from the complex reaction between zinc acetate dihydrate and 2-(2-hydroxyphenyl) benzothiazolate. Then Zn(BTZ)2 was used as main light-emitting material doped with different amounts of fluorescent dye Rubrene and fabricated a series of white organic light emitting devices. The configurations were as follows: ITO/PVK:TPD/Zn(BTZ)2:Rubrene/Al. The doping concentration of Rubrene in Zn(BTZ)2 was 1.2%, 0.12%, 0.08% and 0.05%, respectively. According to the EL spectra and CIE coordinates of the above devices, the optimum doping concentration (0.05%, weight percent) had been determined. The steady and bright white light emitting of the device with 0.05% doping concentration had been obtained, and the white emission covered a wide range of driving voltage (10--22.5 V). The CIE coordinates were (x=0.341, y=0.334) at the driving voltage of 20 V, which was very close to the equi-energy point (x=0.333, y=0.333), and the corresponding luminance and external quantum efficiency were 4048 Cd/m^2 and 0.63% (4.05 Cd/A), respectively. Lastly, we also discussed the emitting mechanisms of the material and the devices.     

Properties and Morphology of TiN Films Deposited by Atomic Layer Deposition

In this study,TiN films were deposited on SiO2 substrates by Atomic Layer Deposition(ALD) using TiCl4and NH3 as precursors. Properties and morphology of the TiN films were characterized by different methods.Using Grazing Incidence X-Ray Diffraction(GIXRD),TiN films demonstrated polycrystalline structure with(111)preferred orientation. Film thickness was measured by Spectroscopic Ellipsometry(SE) and a stable growth rate of 0.0178 nm/cycle was reached after 500 deposition cycles,which was consistent with the essence of ALD as a surface-saturated self-limiting reaction. Film resistivity measured by a four-point probe continuously decreased with increasing deposition cycles until it reached the minimum value of 300μΩ cm at 5000 deposition cycles with a thickness of 87.04 nm. The surface roughness and morphology of the TiN films at different deposition cycles ranging from 50 to 400 were analyzed by Atomic Force Microscopy(AFM). The AFM results indicated that the initial film growth follows the Stranski-Krastanov mode.     

Stability study of saturated red polymer light-emitting diodes

Saturated red polymer light-emitting diodes have been fabricated with a single emitting polymer blend layer of poly[2-(2-ethylhexyloxy)-5-methoxy-1,4-phenylenevinylene] (MEH-PPV) and poly[9,9-dioc- tylfluorene-co-4,7-di-2-thienyl-2,1,3-benzothiadiazole] (PFO-DBT15). Saturated red emission with the Commission Internationale de l’Eclairage (CIE) coordinates of (0.67, 0.33) was obtained. The device stability was investigated. The results showed that energy transfer occurred from MEH-PPV to PFO-DBT15, and MEH-PPV improved the hole injection and transportation.     

镶嵌纳米碳粒和硅粒氧化硅膜的电致红光发射研究

Luminescence study from the silicon oxide films embedded nm carbon particles (CSO) and nm silicon particles (SSO) is of great importance in integrated optoelectronics[1]. The pioneering work on electroluminescence (EL) from the SSO was reported by Dimaria et al[2]. They attributed the light emission to band-band recombination of electron-hole pairs in nanosize silicon particles. This model is referred to as the quantum confinement model. In this paper,we deposit CSO and SSO films onto p-type Si substrate and study comparatively visible EL from the Au/CSO/p-Si and Au/SSO/p-Si structures.     

Pulsed laser deposited Al-doped ZnO thin films for optical applications

Highly transparent and conducting Al-doped Zn O(Al:Zn O) thin films were grown on glass substrates using pulsed laser deposition technique.The profound effect of film thickness on the structural, optical and electrical properties of Al:Zn O thin films was observed. The X-ray diffraction depicts c-axis, plane(002) oriented thin films with hexagonal wurtzite crystal structure. Al-doping in Zn O introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:Zn O thin films are important for applications such as transparent electromagnetic interference(EMI) shielding materials and solar cells. The obtained optical band gap(3.2–3.08 e V) was found to be less than pure Zn O(3.37 e V) films. The lowering in the band gap in Al:Zn O thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:Zn O thin films for light emitting devices(LEDs) applications. The current–voltage(I–V) measurements show the ohmic behavior of the films with resistivity(ρ) 10-3Ω cm.     

Effect of chlorine doping on the structural, morphological, optical and electrical properties of spray deposited CdS thin films

CdS and chlorine doped CdS(CdS:Cl) thin films with different Cl-doping levels(0,2,4,6 and 8 at%) have been deposited on glass substrates by a spray pyrolysis technique using a perfume atomizer.The effect of Cl doping on the structural,morphological,optical and electrical properties of the films was investigated.XRD patterns revealed that all the films exhibit hexagonal crystal structure with a preferential orientation along the(0 0 2) plane irrespective of the Cl doping level.The particle size value decreases from 22.03 nm to 18.12 nm with increase in Cl concentration.Optical band gap is blue-shifted from 2.48 eV to 2.73 eV with increase in Cl doping concentration.All the films have resistivity in the order of 10~4 Ω cm.The obtained results confirm that chlorine as an anionic dopant material can enhance the physical properties of CdS thin films to a large extent.     

Magnetic properties of perpendicularly orientated L1<Subscript>0</Subscript> FePt nanoparticles

L10 FePt films were deposited on MgO (001) substrates heated to 700°C by magnetron sputtering.Assisted by the misfit of lattice between film and substrate,strong (001) texture was formed.The film at nominal thickness t N=5 nm was composed of nanoparticles with a size of～70 nm,and showed a high coercivity of～105 kOe at 4.2 K.At t N=～50 nm,as the film changed from discontinuous to continuous,the coercivity dropped about one order of magnitude.Micromagnetic simulation implies that the magnetization reversal is...     

Effect of TMGa flux on GaN films deposited on Ti coated on glass substrates at low temperature

Highly c-axis-oriented GaN films were deposited on Ti coated glass substrates using low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system(ECR-PEMOCVD)with trimethyl gallium(TMGa)as gallium source.The influence of TMGa flux on the properties of GaN films were systematically investigated by reflection high energy electron diffraction(RHEED),X-ray diffraction analysis(XRD),atomic force microscopy(AFM)and Raman scattering.The GaN film with small surface roughness and high c-axis preferred orientation was successfully achieved at the optimized TMGa flux of 1.0 sccm.The ohmic contact characteristic between GaN and Ti layer was clearly demonstrated by the near-linear current-voltage(I-V)curve.The GaN/Ti/glass structure has great potential to dramatically improve the scalability and reduce the cost of solid-state lighting light emitting diodes.     

新型顶发射有机电致白光二极管的研究

为了提高顶发射白光有机发光二极管(top-emitting white organic light-emitting diodes,TWOLEDs)色谱稳定性，对一种拥有Ag反射镜的新型双蓝光发光单元顶发射器件展开研究，发现结构为Ag/Glass/ITO/MoO₃(5nm)/TAPC(30nm)/TCTA(5nm)/Firpic:TCTA(10%,20nm)/Firpic:TmPyPb(10%,10nm)TPBi(30nm)/LiF(1nm)/Al(0.8nm)/Ag(22nm)/Alq₃(50nm)的蓝光器件具有最佳光电性能，其最高电流效率可以达到9.76cd·A^-1。基于该结构，结合DCJTB荧光染料制备的颜色转换层实现顶发射白光器件。结果表明，当颜色转换层DCJTB浓度为2.5%时，获得了电流效率为2.45cd·A^-1，CIE色坐标为(0.338,0.337)以及显色指数CRI为72的TWOLEDs，器件微腔效应较弱且光谱随电流密度与观测角度改变仅有微弱变化。     

Synthesis and light-emitting properties of organic electroluminescent compounds and their metal complexes

Several organic electroluminescent (EL) compounds, 2,2‘-(1,4-phenylenedivinylene)bis-3,3-dimethyl-indolenine (1), 2,2‘-(1,4-phenylenedivinylene)bis-benzoxazole (2), 2,2‘-(1,4-phenylenedivinylene)bis-benzothiazole (3), 4,4‘-(1,4-phenylenedivinylene)bis-quinoline (4), 2,2‘-(1,4-phenylene divinylene)bis-quinoline (5), 2,2‘-(1,4-phenylenedivinylene)bis-1,3,3-trimethyl-indolenine dichlo ride (6), 2,2‘-(1,4-phenylene-divinylene)bis-1-hydro-3,3-dimethyl-indolenine dichloride (7), 2,2‘-(1,4-phenylenedivinylene)bis-8-acetoxy-quinoline (8), 2,2‘-(1,4-phenylenedivinylene)bis-8-hydroxyquinoline (9) and metal complexes of 9, Al(PHQ) (10) and Zn(PHQ) (11), have been synthesized and characterized. The crystal structure of 6 was determined. Light emitting properties of the prepared compounds have been investigated. 1 produces an orange-yellow emission (λmax=575nm). The cation, 6, gives a red emission (λmax=607nm), which is shifted 32 nm to the red compared to 1.8 produces a yellow emission (λmax=567nm). The metal complex 10 gives a red emission (λmax=610nm), which is a red shift of 43 nm compared to 8. The change in structure in the prepared compound caused a change in the electron distribution in the compounds, which induces a large wavelength shift of the emitted-light. Thermal analysis showed that the decomposition temperatures of the metal complexes (10, 11) were higher than those for the smaller organic molecular compounds (1-9). Therefore, metal complexes (10, 11) can be used as EL materials over a larger temperature range.     

Influence of the electric field on carriers recombination zone in bilayer organic electroluminescent device

The electroluminescence (EL) of bilayer devices (ITO/Polymer/Alq₃/Al) made from two PPV derivatives (MN-PPV and MEH-PPV), respectively, and the influence of the organic layers’ thickness on the characteristics of the device are investigated. Different spectra and variations are observed for different thicknesses of Alq₃ layer in this bilayer organic light-emitting diodes (LEDs) as increasing applied bias. Based on the energy level and field-assisted tunneling at the interface, we attributed these phenomena to electric field redistribution in the device and field-assisted charges being transported and tunneling through energy barrier at high electric field.     

掺杂的有机薄膜电致发光

用DCM染料和香豆素染料掺杂,成功地实现了有机薄膜电致发光颜色的改变,得到了从蓝绿到红色的发光,同时提高了器件的发光亮度,用不同区域掺杂方法,分析讨论了电致发光的机理,探讨了激子的产生区域和复合区域。     

基于N-BDAVBi的非掺杂高效蓝色OLEDs

采用真空蒸镀方法,制备了以N-BDAVBi为发光层的高效率非掺杂蓝色有机电致发光器件,器件的结构为ITO/2T-NATA(40 nm)/NPB( 10 nm)/N-BDAVBi( (3+d) nm)/ADN(7 nm)/N-BDAVBi( (3+d) nm)/ADN (7 nm)/Alq3 (30 nm)/LiF(0....     

Synthesis,Structural Characterization,and Electrochemical Properties of Binuclear Copper(Ⅱ) Complexes Containing Tetradentate Schiff Base Ligand

Two binuclear copper(Ⅱ) complexes, [Cu2(saloph)2 (μ-O)2]-2(DMF)[H2saloph=N,N′-o-phenylenebis(salicylideneaminato)] (a) and [Cu2(salen)2(μ-O)2] [H2salen=N,N′-bis(salicylic-deneaminato) ethylene] (b)were synthesized and characterized by X-ray crystallography. Both of them have distorted rectangular pyramidal geometry around Cu(Ⅱ). The complete series of complexes show bridging phenoxo groups between the copper centers, together with hydroxo-bridges in these complexes. The complexes have also been characterized by elemental analysis, IR, TG-DTA, and electrochemical results.     

有机薄膜电致发光器件的研究进展（综述）

对近几年来有机薄膜电致发光（ＥＬ）器件的研究进展进行了综合评停和分析,有机薄膜ＥＬ器件是近年来国际上研究的一个热点,该器件具有可与集成电路相匹配,直流电压低,发光亮度高,以及它与无机薄膜相比较易实现多色显示等优点。     

Investigation of the effects of MoO_3 buffer layer on charge carrier injection and extraction by capacitance–voltage measurement

The effects of MoO3thin buffer layer on charge carrier injection and extraction in inverted configuration ITO/ZnO/MEH-PPV(poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene))/MoO3(0,5 nm)/Ag hybrid solar cells are investigated by capacitance–voltage measurement under dark and light illumination conditions.The efficiency of charge carrier injection and extraction is enhanced by inserting 5 nm MoO3thin layer,resulting in better device performances.Charge carrier transport of the whole device is improved and the interface energy barrier is reduced by inserting 5 nm MoO3thin buffer layer.The device fill factor is increased from 54.1%to 57.5%after modifying 5 nm MoO3.Simulations and experimental results consistently show that in the forward voltage under dark,the device with the 5 nm MoO3thin layer modification generates larger value of capacitance than the device without MoO3layer.While under illumination,the device with the 5 nm MoO3layer generates smaller value of capacitance than the device without the 5 nm MoO3layer in the bias region of reverse and before the peak position of maximum capacitance(VCmax).The underlying mechanism of the MoO3anode buffer layer on device current density–voltage characteristics is discussed.     

Spectral behavior of 8-hydroxyquinoline aluminum in nanometer-sized holes of porous alumina

The porous alumina have been prepared by anodization and an organic molecule 8-hydroxyquinoline aluminum (Alq₃) has been impregnated in the pores. The morphology measured through atomic force microscopy shows that the size of the pores is about 10 nm. A blue-shift photoluminescence of Alq₃ in nanometer-sized hole is close to that of the monomers. The measured spectral characteristics demonstrate the limitation of the porous alumina to the emission of Alq₃.