纳米材料锰掺杂量子点中的近藤效应

采用非平衡格林函数方法,探讨了量子点掺杂锰原子纳米材料的低温输运特性。结果表明,输运受到掺杂锰原子的强烈影响。具体来说,在微分电导中出现（2S＋1）个近藤劈裂峰,锰原子表现为一个多值量子化有效磁场,导致这种劈裂。     

表面声波在一维电子通道中诱导产生的声电电流

表面声波(SAW)在GaAS／AlxGa1-xAs异质结表面上沿由分裂门产生的准一维电子通道方向传播时，在通道中可诱导产生声电电流，根据准经典(WKB)近似，计算出一维电子通道钳断情况下的量子化声电电流，并详细讨论了源漏偏压和库仑相互作用对声电电流的影响。     

多壁碳纳米管与基体之间界面热输运分子动力学模拟

碳纳米管与基体之间的热耦合对纳米结构界面热输运起主导作用。采用非平衡态分子动力学模拟了垂直生长多壁碳纳米管与Si基体之间的热耦合,得到界面热导的温度效应和作用力效应并利用声子输运理论进行了分析。低温下多壁碳纳米管与Si之间声子的态密度匹配较好,界面热输运能力主要取决于界面两侧低频声子的耦合振动,高温下近界面区域内热输运能力受高频声子的非弹性散射影响而逐渐增强。随着范德瓦尔斯力增强,界面热导线性增大。     

La_(5/8)Ca_(3/8)Mn_(1-x)Co_xO_3(x≤0.1)体系电阻率低温最小值现象的散射机制

主要研究了La5/8Ca3/8Mn1-xCoxO3(x≤0.1)体系的低温电输运特性.在全温区,电阻率随温度变化曲线出现双绝缘—金属转变峰现象;各样品均在25 K附近存在一个有趣的低温电阻最小值现象,外加磁场可使其向低温区移动并产生抑制作用.通过对La5/8Ca3/8Mn1-xCoxO3(x≤0.1)样品在25 K附近的电输运特性进行的拟合分析,表明存在着弹性和非弹性散射过程的竞争,可用库仑相互作用和非弹性电子散射解释.拟合参数值的变化表明来自电子—电子、电子—声子及电子—磁子散射的共同作用,且电子—电子相互作用随着Co掺杂量的增加而增强,这与样品在低温下存在的铁磁—反铁磁相互竞争产生的团簇玻璃态有关.随着Co掺杂量增大,FM团簇减少且自旋冻结,使载流子局域化增强而导致电阻率增大.证明了与磁场和温度有关的电子散射进程引起电子的局域化效应乃是导致体系输运行为发生变化的主要原因.     

有源介观耗散电路的库仑阻塞效应

基于介观电路的电荷是量子化的这一事实熏应用正则量子化方案给出介观RLC电路的量子化方法和库仑阻塞条件.研究结果表明押存在耗散元件的介观电路的库仑阻塞效应不仅与电路的非耗散有关熏而且与耗散电阻有关.随耗散电阻的增大熏库仑阻塞现象更加明显.     

有源介观耗散电路的库仑阻塞效应

基于介观电路的电荷是量子化的这一事实，应用正则量子化方案给出介观RLC电路的量子化方法和库仑阻塞条件，研究结果表明：存在耗散元件的介观电路的库仑阻塞效应不仅与电路的非耗散有关，而且与耗散电阻有关，随耗散电阻的增大，库仑阻塞现象更加明显。     

金属点接触中的量子化电导

用三维－一维－三维（３Ｄ－１Ｄ－３Ｄ）模型，研究了介观尺寸的弹道电子输运．利用单电子近似和模匹配技术求解三维自由电子气中的单电子薛定谔方程，得出了以２ｅ２／ｈ为单位的量子化电导．与２Ｄ－１Ｄ－２Ｄ模型体系中的结果不同，该模型体系出现了基于方位角简并的、以２×２ｅ２／ｈ为单位的电导量子化现象     

介观耗散电容耦合电路的库仑阻塞效应

该文基于介观电路中电荷应是量子化的这一事实，应用正则量子化方法给出了介观耗散电容耦合电路的量子化方法和库仑阻塞条件，研究结果表明：介观耗散电容耦合电路的库仑阻塞条件不仅与电路中的电容和电感有关，而且与耗散电阻有关；随着耗散电阻的增大，库仑阻塞现象更加明显．该文还讨论了介观电容耦合电路的量子涨落。     

单电子输运器件中的动态电子传输

在基于GaAs/AlGaAs异质结二维电子气的声表面波单电子输运器件中,利用声表面波诱发的动态量子点依次通过由串联的三对刻蚀门电极各自所形成的准一维通道,成功实现了电子的量子化动态输运,并对输运特性进行了分析.通过提出局域态杂质模型和电子的屏蔽效应,解释了实验中观测到的双峰声电电流现象.     

颗粒间隧穿体系H-A模型的磁电阻翻转效应

基于HELMAN-ABELES模型,超越传统的一级近似,对磁场相关库仑阻塞下体系的磁输运性质进行了系统的理论分析.我们发现,磁场相关的库仑能隙将引起低温下的正磁电阻发散行为,该行为与自旋极化引起的低温负磁电阻相互竞争,使体系的宏观磁电阻随参数的区域变化呈现出复杂的特征.我们分析了该正磁电阻出现的根本原因,从而指出影响磁电阻的因素除了传统的自旋极化率之外,还有与之效果相反的自旋相关库仑能隙的作用,后者为颗粒体系中的磁电阻效应提供了新的可能来源.     

预埋增强介质对玻璃纤维复合材料低温弯曲性能的影响

针对低温飞行环境下玻璃纤维增强塑料(glass fiber reinforced plastic,GFRP)可能出现的弯曲断裂问题,对预埋增强介质的GFRP层合板低温弯曲性能进行研究.首先,制备层间预埋碳纳米管薄膜和碳粉薄膜的GFRP层合板;其次,进行低温环境下的三点弯曲试验,并通过分析弯曲应力-应变曲线得出:低温环境...     

Superplastic carbon nanotubes

The theoretical maximum tensile strain--that is, elongation--of a single-walled carbon nanotube is almost 20%, but in practice only 6% is achieved. Here we show that, at high temperatures, individual single-walled carbon nanotubes can undergo superplastic deformation, becoming nearly 280% longer and 15 times narrower before breaking. This superplastic deformation is the result of the nucleation and motion of kinks in the structure, and could prove useful in helping to strengthen and toughen ceramics and other nanocomposites at high temperatures.     

多壁碳纳米管压缩与弯曲时屈曲的ANSYS模拟

壳模型是研究碳纳米管力学行为时广泛采用的模型,但模型的等效厚度与碳管的物理厚度差别较大,长期存在争议.特别是当壳模型用于多壁碳纳米管分析时,层间作用需要额外考虑.提出碳纳米管的三明治式连续介质模型,用三层连续介质模拟一层碳管：内层模拟层内σ-键,两外侧层模拟层间范德华作用和π-键.该模型可直接利用有限元方法分析多壁碳纳米管的力学行为,且与已有分子动力学等计算结果比较,表明了该模型的有效性.     

Kondo resonance in a single-molecule transistor

When an individual molecule, nanocrystal, nanotube or lithographically defined quantum dot is attached to metallic electrodes via tunnel barriers, electron transport is dominated by single-electron charging and energy-level quantization. As the coupling to the electrodes increases, higher-order tunnelling and correlated electron motion give rise to new phenomena, including the Kondo resonance. To date, all of the studies of Kondo phenomena in quantum dots have been performed on systems where precise control over the spin degrees of freedom is difficult. Molecules incorporating transition-metal atoms provide powerful new systems in this regard, because the spin and orbital degrees of freedom can be controlled through well-defined chemistry. Here we report the observation of the Kondo effect in single-molecule transistors, where an individual divanadium molecule serves as a spin impurity. We find that the Kondo resonance can be tuned reversibly using the gate voltage to alter the charge and spin state of the molecule. The resonance persists at temperatures up to 30 K and when the energy separation between the molecular state and the Fermi level of the metal exceeds 100 meV.     

碳纳米管分子秤的理论研究

介绍了基于单根碳纳米管的纳米分子秤系统，以及其测量分子（团）质量的基本原理，建立了适用于该系统的纳米悬臂梁模型，通过求解系统的振动方程，研究了系统的固有频率与分子（团）质量之间的关系，用数值法计算了两者的函数曲线。结果表明，碳纳米管可以直接测量ｆｇ级的分子（团）质量，当分子（团）质量超过碳纳米管自身质量时，纳米分子秤变得不够灵敏。     

Coulomb-blockade transport in single-crystal organic thin-film transistors

Coulomb-blockade transport--whereby the Coulomb interaction between electrons can prohibit their transport around a circuit--occurs in systems in which both the tunnel resistance, Rb between neighbouring sites is large (>h/e2) and the charging energy, E(C) (E(C) = e2/2C, where C is the capacitance of the site), of an excess electron on a site is large compared to kT. (Here e is the charge of an electron, k is Boltzmann's constant, and h is Planck's constant.) The nature of the individual sites--metallic, superconducting, semiconducting or quantum dot--is to first order irrelevant for this phenomenon to be observed. Coulomb blockade has also been observed in two-dimensional arrays of normal-metal tunnel junctions, but the relatively large capacitances of these micrometre-sized metal islands results in a small charging energy, and so the effect can be seen only at extremely low temperatures. Here we demonstrate that organic thin-film transistors based on highly ordered molecular materials can, to first order, also be considered as an array of sites separated by tunnel resistances. And as a result of the sub-nanometre sizes of the sites (the individual molecules), and hence their small capacitances, the charging energy dominates at room temperature. Conductivity measurements as a function of both gate bias and temperature reveal the presence of thermally activated transport, consistent with the conventional model of Coulomb blockade.     

High brightness electron beam from a multi-walled carbon nanotube

Carbon nanotubes can act as electron sources with very rigid structures, making them particularly interesting for use as point electron sources in high-resolution electron-beam instruments. Promising results have been reported with respect to some important requirements for such applications: a stable emitted current and a long lifetime. Two parameters of an electron source affect the resolution of these instruments: the energy spread of the emitted electrons and a parameter called the reduced brightness, which depends on the angular current density and the virtual source size. Several authors have measured a low energy spread associated with electron emission. Here we measure the reduced brightness, and find a value that is more than a factor of ten larger than provided by state-of-the-art electron sources in electron microscopes. In addition, we show that an individual multi-walled carbon nanotube emits most current into a single narrow beam. On the basis of these results, we expect that carbon nanotube electron sources will lead to a significant improvement in the performance of high-resolution electron-beam instruments.     

Carbon nanothermometer containing gallium

Many applications have been found for carbon nanotubes, and we can now add a role as a 'nanothermometer' to this list. We describe how the height of a continuous, unidimensional column of liquid gallium inside a carbon nanotube (up to about 10 micrometres long and about 75 nanometres in diameter) varies linearly and reproducibly in the temperature range 50-500 degrees C, with an expansion coefficient that is the same as for gallium in the macroscopic state. We chose gallium as our thermal indicator because it has one of the greatest liquid ranges of any metal (29.78-2,403 degrees C) and a low vapour pressure even at high temperatures. This nanothermometer should be suitable for use in a wide variety of microenvironments.