用TEOSPECVD氧化硅做掩蔽层选择性生长金刚石薄膜

本文研究了在ＨＦ—ＣＶＤ法中，衬底温度Ｔｓ对ＰＥＴＥＯＳ（等离子体增强正硅酸乙酯）氧化硅—硅衬底上选择性生长金刚石薄膜的影响。结果表明：Ｔｓ变化影响ＰＥＴＥＯＳ氧化硅掩蔽层区域和硅表面金刚石晶粒成核密度。Ｔｓ较低时（７５０—８２０℃），ＰＥＴＥＯＳ氧化硅区域成核密度远小于裸露硅表面；随Ｔｓ升高（＞８２０℃），氧化硅区域成核密度增加很快；当Ｔｓ＞８５０℃时，氧化硅区域成核密度超过硅表面。     

Fabrication of copper nanorods by low-temperature metal organic chemical vapor deposition

Copper nanorods have been synthe-sized in mesoporous SBA-15 by a low-temperature metal organic chemical vapor deposition (MOCVD) employing copper (II) acetylacetonate, Cu(acac)2, and hydrogen as a precursor and reactant gas, re- spectively. The hydrogen plays an important role in chemical reduction of oganometallic precursor which enhances mass transfer in the interior of the SBA-15 porous substrate. Such copper nanostructures are of great potentials in the semiconductor due to their unusual optical, magnetic and electronic properties. In addition, it has been found that chemically modi- fying the substrate surface by carbon deposition is crucial to such synthesis of copper nanostructures in the interior of the SBA-15, which is able to change the surface properties of SBA-15 from hydrophilic to hydrophobic to promote the adsorption of organic cupric precursor. It has also been found that the copper nanoparticles deposited on the external sur- face are almost eliminated and the copper nanorods are more distinct while the product was treated with ammonia. This approach could be achieved under a mild condition: a low temperature (400℃) and vac-uum (2 kPa) which is extremely milder than the con- ventional method. It actually sounds as a foundation which is the first time to synthesize a copper nanorod at a mild condition of a low reaction temperature and pressure.     

玻璃陶瓷基板上铜薄膜的化学气相沉积

使用低介电常数基板和高电导率、高抗电迁移的金属Cu进行布线,可以提高高密度电子封装的传输速度和可靠性。采用乙酰丙酮铜作为前驱体,在常压下利用化学气相沉积技术对玻璃陶瓷基板进行Cu薄膜金属化。利用热重分析、X射线衍射和扫描电子显微镜等技术对前驱体、Cu薄膜进行分析观察。结果表明:影响Cu导体的电阻的主要因素是沉积温度。在温度为290～310℃,N2气流量为200～350mL/min和H2气流量为450～600mL/min的条件下,获得了致密的Cu薄膜,Cu导体方块电阻为25mΩ。     

Controllable synthesis of Ni-catalyzed tetragonal tungsten nanowires via chemical vapor deposition

Controllable synthesis of Ni-catalyzed tetragonal tungsten nanowires via chemical vapor deposition     

等离子体辅助化学气相沉积法生长ZnO薄膜的研究

讨论了在不同基板温度下用等离子体辅助化学气相沉积法生长ZnO薄膜,用X射线衍射(XRD)分析仪、反射式高能电子衍射(RHEED)仪及X射线光电子能谱(XPS)分析ZnO薄膜的特征.分析结果显示,在基板温度为300 ℃,二乙基锌(DEZ)流量为50 mL/min条件下可得到优取向高晶化的ZnO薄膜.光学性能分析表明,ZnO薄膜是透明的,在可视区峰值透光率高达85%.     

Catalyst enhanced chemical vapor deposition of nano-particle nickel films on teflon surface

Films formed with nanosized nickel particles on teflon surface were prepared by means of catalyst enhanced chemical vapor deposition (CECVD) with Ni(dmg)₂, Ni(acac)₂, Ni(hfac)₂, Ni(TMHD)₂, and Ni(cp)₂ as precursors, and complexes Pd(hfac)₂, PdCl₂ and Pd(η ³-2-methylallyl)acac as catalyst under carrier gas (H₂). The film growth rate depends on the precursors and substrate temperature. The chemical value, purity and surface morphology of the Ni particle films were characterized by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The films obtained were shiny with silvery color, and consisted of grains with a particle size of 50–140 nm. The Ni was metallic of which the purity was about 90%–95% from XPS analysis. SEM micrograph showed that the film had good morphology.      

石墨烯薄膜的化学气相法制备及光、电特性研究

利用化学气相沉积方法制备了石墨烯薄膜,并研究了其光电特性。以乙醇做反应原料、氩气作为携载气体,在873 K、973 K、1 073 K的温度下合成石墨烯薄膜。应用光学显微镜观察,发现在1 073 K时能够制备大面积均匀、平整光滑的石墨烯薄膜。纳曼光谱分析结果表明:制备的石墨烯薄膜出现2 650 cm-1的石墨烯的特征峰-D强峰,同时该峰强度随温度的升高而迅速增强,说明低温不能使沉积的碳原子有效的石墨化为石墨烯,而较高的温度有助于乙醇分解并石墨化为石墨烯薄膜。在1 073 K时沉积的石墨烯薄膜具有良好的光、电特性,其电子迁移率可以达到104 cm2.(V.s)-1,光透射率达97%,因此,可用于制备石墨烯晶体管、太阳能电池等光电子器件。     

氮化硅薄膜的PECVD沉积工艺与绝缘耐压性能

用PECVD法制备氮化硅介质薄膜 ,分析了沉积温度、本底真空度及气体流量比等工艺参数对氮化硅薄膜绝缘耐压性能的影响 ,制备出 0 .4 μm的性能良好的氮化硅介质绝缘膜     

放电电流对热阴极等离子体化学气相沉积金刚石膜影响

建立了快速沉积高品质金刚石膜的热阴极辉光放电等离子体化学气相沉积新方法. 相对于常规冷阴极辉光放电而言,热阴极辉光放电是一种新型放电形式,具有许多新的特性,其中重要一点是具有较高的放电电流(6.0～10.0 A). 较高的放电电流既是热阴极辉光放电本身的突出特点,同时对于化学气相沉积金刚石膜工艺也产生重要影响. 实验研究了放电电流于金刚石膜沉积速率、表面形貌和热导率的影响,发现由于放电电流影响辉光放电的等离子体区和阳极区,进而对金刚石膜的沉积速率和品质有很大影响. 特别是通过放电电流的提高,可以有效地提高金刚石膜的品质,这对于制备优质金刚石膜产品有重大意义.     

等离子体化学气相沉积工艺调控铜基-石墨烯复合薄膜材料微结构及电学热学性能研究

本文利用等离子体化学气相沉积PECVD(Plasma-Enhanced Chemical Vapor Deposition)技术制备了铜基-石墨烯复合薄膜,通过X射线衍射及Raman光谱证实了低温合成的可行性.同时,逐步研究压强、功率、气流量、基底温度等关键参数对沉积速率的影响,实现了对薄膜材料厚度和生长过程的准确控制.进一步研究发现,H₂与CH₄的气体比例严重影响了等离子体与基底表面的相互作用,并导致了材料表面微观结构和粗糙度的协同改变.通过工艺参数和气体配比的优化,实现了对薄膜表面结构的有效调节.当H₂/CH₄为1∶12时,薄膜的粗糙度最低,电子与声子的散射源被充分抑制,电导率和热导率分别达到8.3×10⁶ S/cm与158 W/m·K,表明该材料具有良好的导电性及优秀的散热效果.本文系统优化PECVD生产过程中的各项关键工艺参数,并详细分析了气体配比、表面结构、粗糙度及薄膜宏观物性之间的关联,为铜基-石墨烯复合薄膜的工业化生产和商业化应用提供了理论支撑和实验依据.     

采用热丝化学气相沉积法制备SiCN薄膜的研究

采用热丝化学气相沉积(HFCVD)系统,在单晶Si衬底上制备SiCN薄膜。所采用的源气体为高纯的SiH4,CH4和N2。用原子力显微镜(AFM)、X线衍射谱(XRD)和X线光电子能谱(XPS)对样品进行表征与分析。研究结果表明:SiCN薄膜表面由许多粒径不均匀、聚集紧密的SiCN颗粒组成;薄膜虽然已经晶化,但晶化并不充分,存在着微晶和非晶成分,通过Jade软件拟合计算出薄膜的结晶度为48.72%;SiCN薄膜不是SiC和Si3N4的简单混合,薄膜中Si,C和N这3种元素之间存在多种结合态,主要的化学结合状态为Si—N,Si—N—C,C—N,N=C和N—Si—C键,但是,没有观察到Si—C键,说明所制备的薄膜形成了复杂的网络结构。     

单源化学气相沉积法制备In2O3纳米线

以乙酰丙酮合铟[In（acac）3]（acac=acetylacetonate）作为单源前驱体,Au为催化剂,采用化学气相沉积法,于较低温度（550℃）下成功制得了In2O3纳米线．用X射线粉末衍射（XRD）、扫描电镜（SEM）、透射电镜（TEM）和能量分散光谱（EDS）对In2O3纳米线进行了表征;制得的In2O3纳米线具有单晶结构,平均直径约为80nm,长度达十几微米,其生长服从气一液一固机理．光致发光研究发现,In2O3纳米线在483nm处有一个强的发射峰,这可归因于氧空位的存在．     

Synthesis of graphene on a Ni film by radio-frequency plasma-enhanced chemical vapor deposition

Large-area single-or multilayer graphene of high quality is synthesized on Ni films by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) at a relatively low temperature (650℃).In the deposition process,a trace amount of CH4 gas (2-8 sccm (sccm denotes standard cubic centimeter per minute at STP)) is introduced into the PECVD chamber and only a short deposition time (30-60 s) is used.Single-or multilayer graphene is obtained because carbon atoms from the discharging CH4 diffuse into the Ni film and then segregate out at its surface.The layer number of the obtained graphene increases when the deposition time or CH4 gas flow rate is increased.This investigation shows that PECVD is a simple,low-cost,and effective technique to synthesize large-area single-or multilayer graphene,which has potential for application as electronic devices.     

等离子体增强化学气相沉积法制备氧化锌薄膜

通过引入金属有机源——二乙基锌和二氧化碳,用等离子体增强化学气相沉积(PECVD)的方法在低温下制备高质量(002)取向的氧化锌薄膜,详细研究了衬底温度对薄膜质量的影响.实验发现,衬底温度对氧化锌的取向性和晶粒的大小都有显著的影响.随着温度的提高,氧化锌的取向性增强,温度为230℃时得到单一(002)取向的六角结构的氧化锌薄膜,其XRD的半高宽为0.26.°从其透射谱可以观察到典型的激子吸收线,从光致发光谱上可以观察到一个强而窄(半高宽度大约为125 m eV)的3.26 eV紫外激子发射.     

化学气相沉积法制备光谱选择性碲膜

用化学气相沉积法制备碲薄膜,其步骤为：通过电化学方法制得碲化氢,碲化氢在室温下分解后在聚乙烯塑料箔上沉积得到碲薄膜.用傅里叶红外光谱仪、紫外/可见/近红外光谱仪、X射线衍射仪及扫描电镜表征碲薄膜的光学性能和结构.结果表明,化学气相沉积法在Mn-O覆盖的聚乙烯塑料箔上沉积得到的碲薄膜在大气窗口（8～13μm）光谱区域具有很高的透过率,同时能阻挡几乎所有的太阳光谱,表明碲薄膜是适用于辐射制冷装置的太阳光辐射屏蔽材料.     

纳米晶钨膜的沉积工艺研究及微结构表征

采用射频测控溅射方法,在Ar/He混合气氛下制备了纳米晶钨膜;利用增强质子背散射、慢正电子束分析和X射线衍射分析分别对钨膜中钨原子沉积情况、空位型缺陷分布及微结构进行了分析.结果表明:纳米晶钨膜具有完好的体心立方晶体结构,沿(110)方向生长;微量的氦掺入有助于钨原子沉积,同时也有利于制备均匀性和热稳定性较好的厚钨膜.     

Well-aligned carbon nanotube array membrane synthesized in porous alumina template by chemical vapor deposition

A new simple approach was devetoped for preparing wetl-aligned and monodispersed carbon nanotube (CNT) array membrane within the cylindrical pores of anodic aluminum oxide (AAO) template by chemical vapor deposition (CVD). Acetylene and hydrogen were used in the CVD process with Fe-catalyzer at 700°C under 250 Pa. Scanning etectron microscope (SEM) and transmission etectron microscope (TEM) were employed to characterize the resulting highly-oriented uniform hollow tube array which had a diameter of about 250 nm, a tube density of 5.3x10⁸ cm² and a length of about 60 μm. The length and diameter of the tubes depend on the thickness and pore diameter of the template. The growth properties of the CNT array film can be achieved by controlling the structure of the template, the particle size of Fe-catalyzer, the temperature in the reactor, the flow ratio and the deposition time. The highly-oriented and uniform CNT array membrane fabricated by this simple method is very much useful in a variety of applications.     

静电辅助的气溶胶化学气相沉积法制备Y2O3薄膜

采用静电辅助的气溶胶化学气相沉积的方法成功地在Si(100)衬底上制备了Y2O3薄膜,利用X射线衍射(XRD)、场发射扫描电镜(FE-SEM)、原子力显微镜(AFM)和X射线光电子能谱(XRP)对薄膜进行了表征.SEM分析结果显示,薄膜的颗粒为纳米级的,并且薄膜致密、平整.AFM分析结果表明,薄膜的粗糙度为11nm.由XPS分析可知,薄膜为基本上符合化学计量比的氧化物.附着力测试表明,Y2O3薄膜与Si衬底的附着力为4.2N.X射线衍射分析结果表明,沉积得到的Y2O3薄膜在热处理前为非晶结构,热处理之后薄膜具有立方晶体结构,并且沿(111)面择优生长.     

用CVI增密技术制备航空刹车用C/C复合材料

以炭布与炭纤维薄毡交替成叠层,采用针刺技术在垂直布面方向引入增强纤维,制成准三维预制体,在自行研制的热梯度CVI炉中制备了航空刹车用C/C复合材料;采用偏光显微镜研究了沉积炭的显微结构.研究结果表明该CVI炉可实现多试样同时沉积,且位于料柱不同位置的试样密度分布较均匀;对外径为110 mm,内径为45 mm,厚度为15～20 mm的试样,在80 h内,试样的平均密度可达1.60 g/cm3,炭的有效利用率可达27%;在料柱的不同位置以及同一试样中沿径向的不同位置,沉积炭的显微结构都有所不同;沉积炭的显微结构有粗糙层结构、带状结构以及光滑层结构;通过工艺参数的优化,可以得到以粗糙层结构为主的C/C复合材料.