基于被动矩阵有机发光二极管屏的光学指纹采集系统

目前智能门锁多采用光学指纹采集系统,针对其需要发光二极管(light-emitting diode,LED)背光源,存在功耗大、发光不均匀、光学指纹模块过厚的缺点,设计一种应用自发光被动矩阵有机发光二极管屏代替LED的光学指纹采集系统,改善了以上问题.且针对该方法采集的原始图像存在屏幕发光像素干扰的问题,提出平均值消除...     

基于八羟基喹啉铝有机发光二极管的研制

以八羟基喹啉铝(Alq3)和芳香二胺(TPD)为有机原材料,用热蒸发方法把它们蒸镀成薄膜并制作成有机发光器件．原子力显微镜观测得到Alq3和TPD薄膜为均匀、规整的不定形结构．研制的有机发光二极管(OLEDs)具有良好的整流特性、发光特性和稳定性,发光亮度随外加电压增加而逐渐增大,发光亮度最高达1813cd／m^2。     

有机掺杂红色发光二极管的特性研究

研究了不同掺杂浓度掺杂Alq3：DCM体系有机发光二极管的电致发光（EL）特性,根据实验结果,指出器件的EL发射峰值跟作为受体的DCM在给体Alq3中的掺杂浓度有关,应用Forster能量传递理论对其机理进行了解释。     

基于Alq3的有机发光二极管中的瞬时荧光与延迟荧光

制备了结构为ITO/CuPc/NPB/Alq3/LiF/Al的有机发光二极管, 并在100, 70, 40和15 K四个温度测量了器件在恒流偏置下电致发光随磁场的变化. 器件的电致发光包括瞬时荧光与延迟荧光两部分. 两者都可以受外加磁场影响, 但对磁场的依赖关系不同. 由此导出了在不同磁场强度时瞬时光强度与延迟光强度和总发光强度的关系. 基于对延迟光强度磁场效应的合理估计, 分别计算了器件在不同的温度、电流下瞬时光强度与延迟光强度的值, 和延迟光在器件总发光中的比重. 计算结果显示, 在15 K和160 μA时, 延迟光在器件总发光中的比重可超过20%. 对计算公式所基于的假设进行了分析, 并且探讨了这些假设对计算结果的影响.     

有机发光二极管的最新发展

本文介绍了有机发光二极管的构造与发光机理，并结合我们自己的工作展望了有机发光二极管的发展趋势。     

Alq3有机发光二极管中的激子湮灭过程及其磁场效应

在基于Alq3的有机发光二极管中,器件的电致发光包括瞬时荧光与延迟荧光两部分.二者都可以受外加磁场影响,但对磁场的依赖关系不同.由此推导出了在不同磁场强度时瞬时光强度与延迟光强度和总发光强度之间的经验公式.基于对延迟光强度磁场效应的合理估计,分别计算了器件在不同温度、不同电流下的瞬时光与延迟光强度,以及二者随外加磁场的变化.利用Merrifield关于激子湮灭的唯象理论,深入分析了在完全有序和完全无序两种体系中的三重态激子湮灭过程及其磁场效应.     

有机发光二极管中不同金属电极引起的奇特磁效应

采用三类金属阴极材料Ca,Al和Cu（Au）通过分子束沉积和电子束加热方式制备了有机发光二极管ITO/CuPc/NPB/Alq3/金属阴极,并在300,200,150,100,50和15K6个温度下,分别测量了不同电极器件的发光随外加磁场的变化（即Magneto-ElectroLuminescence,MEL）.在室温300K下,发现Ca,Al和Cu（Au）电极器件的MEL在低场（0B50mT）均表现为快速上升;但随磁场（B〉50mT）的进一步增大,Ca和Al电极器件的MEL缓慢变大并逐渐趋于饱和,且与阴极的制膜方式无关;而采用电子束加热方式制备的Cu（Au）电极器件,其MEL却表现出高场缓慢下降;且温度越低,该类Cu电极器件MEL的高场下降更为显著.实验研究表明,Ca和Al电极器件的MEL主要是由超精细耦合作用随外加磁场变化引起的.但电子束加热方式制备的Cu（Au）电极器件的MEL除了超精细耦合作用引起的低场快速上升外,其高场下降的可能机制则是：Cu（Au）电极器件中电子-空穴对的俘获区（e-hCapture Zone）靠近阴极界面,相比较于热蒸发的方式,电子束蒸发的方式更容易使重金属Cu（Au）原子得到更高的能量,使其渗透进相邻的有机层Alq3中,Cu（Au）原子的强自旋轨道耦合作用导致电子-空穴对发生自旋翻转,此为MEL出现高场下降的原因.     

LiF用作阴极注入层的有机发光二极管制备

使用真空热蒸发方法,制备了结构为ITO/TPD/Alq3/LiF/Al的有机发光二极管,其中LiF用作阴极注入层,LiF超薄层的加入,增强了电子注入,降低了启亮电压,提高了器件的发光效率和亮度. 实验结果表明:当加入LiF层的厚度为0.5 nm时,器件性能的改善最好,和不含LiF的器件相比,启亮电压由原来的9 V降低到5 V,效率由1.5 cd/A增加到3.3 cd/A,提高了近1倍,然而随着加入LiF层厚度的增加,器件性能的改善效果降低.     

有机-无机混合阳离子钙钛矿发光二极管研究进展

 有机-无机杂化钙钛矿具有制备方便、光学带隙可调、电荷传输性能优异等特性,正成为新一代革命性的半导体光电材料。随着研究的不断发展,钙钛矿材料的量子产率已经超过90%。材料合成的快速发展促进了其在光电子器件上的应用,包括太阳能电池、发光二极管、光电探测器和晶体管等。本文回顾了有机-无机混合阳离子钙钛矿发光二极管的最新研究进展,包括材料晶体结构、纳米晶合成过程、器件制备及其光电特性表征。有机-无机混合阳离子为高量子产率钙钛矿纳米晶的合成开辟了一种新的途径,同时也为制备高亮度、高效率发光二极管器件提供了新的思路。     

提高有机发光二极管性能的互掺过渡层

研究互掺过渡层对有机电致发光器件性能的影响。在有机发光二极管（OLED）的电子传输层（ETL）与空穴传输层（HTL）、空穴传输层与空穴注入缓冲层之间,加入由这两层材料组成的浓度渐变互掺过渡层,它消除有机层间的界面,减少有机层间的缺陷,且与没有过渡层的器件相比,器件性能明显提高。     

The effect of spacer in hybrid white organic light emitting diodes

Two kinds of highly efficient,bright hybrid white organic light emitting diodes have been fabricated by utilizing ambipolar material 4,4-N,N-dicarbazolebiphenyl(CBP)and unipolar material N,N0-di(naphthalene-1-yl)-N,N0-diphenyl-benzidine(NPB)as the spacer,respectively.By adjusting the thickness of spacers together with effectively utilizing combinations of exciton-harnessed orangephosphorescence/blue-fluorescence,the current efficiency of optimal device with CBP spacer and device with NPB spacer are 31.0 and 38.9 cd/A,the maximum power efficiency are 23.9 and 29.1 lm/W,the maximum brightness are 87,249 and 75,501 cd/m2,and the Commission Internationale de l’Eclairage(CIE)coordinates are(0.42,0.43)and(0.47,0.44)at a voltage of 11 V,respectively.Furthermore,systematic investigations focused on the effects of spacers on device performance have been performed.By virtue of the multifunctional spacer,energy transfer between the phosphorescent and fluorescent emitters can be avoided while the carriers still can pass through this spacer bridge,which is important to realize such high device performance.In addition,a novel concept that both ambipolar materials and unipolar materials can be the promising candidates for spacers has been proposed if the thickness of spacers with high triplet energy is optimized.     

Flexible organic light-emitting diodes with ITO／Ag／ITO multi-layers as anodes

The transparent ITO/Ag/ITO multi-layers are developed as anodes on flexible PET (poly(ethylene terephthalate)) substrates. The influence of these anodes on FOLED (Flexible Organic Light-emitting Diodes) is investigated. From the results of research, it can be seen that the multi-layer anode has optimum characteristics, whose sheetresistance is 11 Ω and optical transmittance is about 80%,when the thickness of Ag sandwiched by two ITO layers is in the range of 14--18 nm. It is demonstrated that the OLED devices with multi-layer anodes give better luminescence and higher efficiency compared with those with single ITO anodes.     

Red organic light emitting device with improved performance using a novel fluorescent dye codoped with phosphor-sensitizer

Efficient red organic light-emitting device consisted of a compound fluorescent-phosphor-sensitized emission layer was fabricated. A novel red fluorescent dye, 3-(dicyanomethylene)-5,5-dimethyl-1-(4-dimethylamino-styryl) cyclohexene (DCDDC), and a green phosphorescent dye, fac tris(2-phenylpyridine) iridium [Ir(ppy)3] were codoped into a host material 4,4’-N,N’-dicarbazolebiphenyl (CBP). By adjusting the component ratio of doping system, a series of devices with different concentration proportion of Ir(ppy)3:DCDDC were constructed. The results demonstrated that the device with 0.2 wt% DCDDC had a maximum power efficiency (η_p) of 2.12 lm/W at a current density of 0.1 mA/cm², which was about 38% higher than that of conventional fluorescent device. When at a current density of 4 mA/cm2 (100 cd/m²) and 52 mA/cm² (1000 cd/m²), the η_p percentage was about 160% and 143% higher than that of conventional device, respectively. A stable red light emission at a peak of 615 nm with Commissions Internationale de l’Eclairage coordinates near the region of (0.56, 0.42) in a wide bias range was also obtained. The improved performances were attributed to the efficient multiple-stage energy transfer from the host to the guest and the suppression of loss mechanism.     

功率型发光二极管芯片的温度场与应力场

发光二极管(LED)的结点温度和应力分布对它的发光效率、可靠性和寿命有着至关重要的影响。为了优化器件的性能,该文利用有限元方法对功率型LED芯片在不同输入功率、基板材料、换热条件下的温度和热应力进行了模拟与分析。结果表明,目前广泛应用的Sapphire基板效果不是很好,如果能减小晶格不匹配的影响,采用硅基板是较好的选择。当基板导热系数、换热系数大于一定值后,单纯的改进基板的导热系数或强化基板换热,对提高器件的性能已经没有明显的效果。     

功率型发光二极管芯片的温度场与应力场

发光二极管(LED)的结点温度和应力分布对它的发光效率、可靠性和寿命有着至关重要的影响。为了优化器件的性能,该文利用有限元方法对功率型LED芯片在不同输入功率、基板材料、换热条件下的温度和热应力进行了模拟与分析。结果表明,目前广泛应用的Sapphire基板效果不是很好,如果能减小晶格不匹配的影响,采用硅基板是较好的选择。当基板导热系数、换热系数大于一定值后,单纯的改进基板的导热系数或强化基板换热,对提高器件的性能已经没有明显的效果。     

Fabrication and spectra characteristics of high efficiency white organic light-emitting diodes with single emitting layer

High-efficiency white organic light-emitting devices with single emitting layer are demonstrated. N,N‘-diphenyI-N,N‘-bis(1,1‘-biphenyl)-4,4‘-diamine (NPB) is used as hole transport layer, while 4,7-diphenyl-l,10-phenan-throline (BPhen) as electron transport layer and 9,10-di-(2-naphthyl)-2-terbutyl-anthracene (TADN) doped with the fluorescent dye 4-(dicyanomethylene)-2-t-buty1-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) (DCJTB) as single emissive layer. The effects of performance by the concentration of DCJTB and the thickness of emissive layer are studied. The device with a structure of indium tin oxide/NPB (50 nm)/TADN: 0.2% DCJTB (15 nm)/BPhen (40 nm)/Mg: Ag shows a maximum brightness of 11400 cd/m^2, a peak current efficiency of 5.6 cd/A and power efficiency of 4.1 Ira/W, while the low turn-on voltage of 3.1 V and the stability of the Commission International De L‘Eclairage coordinate. The spectra through color filter of the device are also studied.     

量子点层厚度对量子点发光二极管发光特性的影响简

采用湿法旋涂技术制备量子点发光二极管器件（QD-LEDs）。PEDOT作为空穴注入层,TFB作为空穴传输层,量子点作为发光层,采用无机二氧化钛（TiO2）作为电子传输层,在相同的工艺条件下调节量子点层旋涂转速（800～1100 r/min）,制备不同厚度的量子点发光二极管发光器件（QD-LEDs）。实验结果表明,当量子点层的旋涂转速为900 r/min时,此时的量子点层厚度为30 nm,所制备的量子点发光二极管器件（QD-LEDs）的发光性能最好,开启电压最低,只有5．5 V。     

有机发光器件中空穴注入对负电容的影响

对不同结构的有机发光器件(OLED)进行了电容-电压(C-V)特性测量,研究了不同空穴注入结构对OLED负电容的影响。结果表明,负电容的产生与OLED内部电场的分布有着密切的关系,负电容开始出现的频率与电压的平方根呈指数关系。与超薄的单层空穴注入层相比,掺杂的空穴注入层不仅能降低器件的驱动电压,而且其载流子传输特性和出现负电容时的初始电压对频率有着更强的依赖性。     

单层有机发光二极管中电场与载流子密度的分布

建立了单层 (有机发光二极管 )中载流子注入、输运和复合的理论模型 ,通过求解非线性Painleve方程得到了电场强度随坐标变化的解析函数关系式 ,计算并讨论了载流子迁移率对电场强度、载流子密度等的影响。结果表明 :空间电荷分布不均匀造成了电场强度的不均匀分布。当在器件中占主导地位的载流子具有较低的迁移率或少数载流子具有较高的迁移率时 ,有利于载流子的输运与复合 ,发光性能可得到较大提高。