Structural,mechanical and corrosion properties of CNT-304 stainless steel nanocomposites

In this work, a systematic investigation was performed on the structural, mechanical and corrosion properties of CNT incorporated 304 stainless steel. Various concentrations of CNT from 0.5 to 4 wt% were incorporated into the 304 stainless steel matrix to investigate the feasibility of fabrication and enhancement of strength and other material properties. The fabrication of CNT-steel composite was achieved through a spark plasma sintering process at a sintering temperature of 800℃. Raman and morphological studies confirmed that the CNT structure was retained in the sintered pellets. Optimum performance was found at 0.5 wt% CNT giving a Vickers hardness of 351 Hv and compressive yield strength of 404 MPa which were 5.5 and 2.0 times, respectively, those of pristine steel. Corrosion studies with 3.5 wt% Na Cl solution revealed a slight increase in the corrosion rate for CNT dispersed samples.     

碳纳米管改性聚苯硫醚复合材料的等温结晶动力学研究

应用差示扫描量热法(DSC)和Avrami模型分析聚苯硫醚(PPS)/碳纳米管(CNT)复合材料的等温结晶行为,分别考察了PPS和复合材料的结晶动力学参数以及结晶活化能,揭示了PPS的等温结晶特性和少量CNT对PPS结晶行为的作用。结果表明：随着结晶温度的升高,复合材料的结晶速率逐渐下降,说明复合材料的结晶是以依热成核控制为主;少量CNT的加入降低了PPS的结晶活化能,明显提高了PPS的结晶速率,同时使成核方式发生转变;纯PPS的Avrami指数n约为4,结晶方式为均相成核,而复合材料的Avrami指数n约为3,转变为异相成核;成核方式的转变大大的提高了PPS的结晶速率。     

Synthesis of CNT film on the surface of micro-pyramid array and its intense pulsed emission characteristics

We developed a new scheme to suppress the electric-field-screening effect in high growth density of a carbon nanotube(CNT) film during its intense pulsed emission.We synthesize the CNT film on a tridimensional surface(t-CNT film).The tridimensional surface includes wet etched silicon pyramids,and the Ni layer is electroless plated thereon.The intense pulsed emission characteristics of the t-CNT and planar-grown CNT(p-CNT) films were measured using a diode structure in single-pulse mode.The even turn-on field decreased from 5.5 V/μm for p-CNTs to 2.8 V/m for t-CNTs,and the peak emission current increased from 232 A for p-CNTs to 324 A for t-CNTs at a peak field intensity ～12.2 V/m.The peak current of the t-CNT film increased by ～39.7% over the p-CNT film.It is clear that the micro-pyramid array can effectively suppress the field screening effect to improve the electron-emission of CNT films.     

Sensing Property of Carbon Nanotube Yarn Embedded in Ethylene Vinyl Acetate (EVA) Elastomer

Carbon nanotube (CNT) has remarkable piezoresistive properties,which makes its extremely sensitive to the mechanical force. In this study,the CNT yarn with the strength of 90 MPa and the strain sensing gage factor of 1.75 was selected and embedded into the ethylene vinyl acetate (EVA) elastomer as a sensing material.By measuring the electric resistance changing under the stretching,bending,longitudinally and transversely compressing of the CNT embedded EVA, the resistance changing curves and their linear correlations were obtained and analyzed. The result shows that the gage factor under the tensile test is the highest( 2.51),which is higher than the original value of CNT yarn (1.75). The gage factors of the CNT yarn embedded into EVA elastomer under bending and longitudinal and transverse compression are 2.29,1.55 and 0.79,respectively.     

多壁碳纳米管/硅橡胶复合材料压敏元件特性

为研究碳纳米管填充聚合物复合材料的压力敏感特性,将硅橡胶为基体、多壁碳纳米管为填料的复合材料涂覆在印制板基底上,经溶剂挥发成膜,制备出柔顺式复合材料压敏元件。对碳纳米管质量分数1.6%、4.3%、9.3%的元件进行压阻特性测试,在单轴步进压力下实时检测压力和元件电阻。结果表明,压敏元件在0～110N单轴步进压力下表现出正压阻效应,特性曲线的变化区间与碳纳米管质量分数相互对应。提出压阻效应的机理是元件在压力作用下产生变形,导致碳纳米管导电网络发生破坏与重构。扫描电镜分析表明,碳纳米管随机取向分散于硅橡胶基体中,形成1-3型复合结构。该新型复合材料压敏元件可用于开发柔顺式力传感器。     

Thin films of porphyrinperylene molecular array fabricated by electrophoresis methodology

Porphyrin-perylene dyad molecular arrays are impor-tant building blocks for mimic photosynthetic systems and molecular opto-electronics such as molecular wires, logic gates and molecular switches. In recent years, Wasielewski’s group[1―3] and Bocian and Lindsey’s group[4―7] have systematically investigated the electronic structure, the mechanism of transient photoinduced charge and/or energy transfer in a few representative porphyrin- perylene arrays, the acquired results threw light on th…     

超顺排碳纳米管阵列、薄膜、长线——通向应用之路

碳纳米管阵列是一种通过自组织形成的有序碳纳米管集体,其中的碳纳米管垂直于基底排列起来.超顺排碳纳米管阵列是一种特殊的碳纳米管阵列,其独特之处在于可以直接抽出连续的碳纳米管薄膜.该碳管薄膜仅有几十纳米厚,既透明又导电,其中的碳管沿抽拉方向平行排列.如果让拉出的薄膜通过一挥发性溶剂,或者采用边拉边绞的方式,该碳管薄膜又可以收缩成长线.该收缩后的长线具有高的力学强度和杨氏模量,是电的良导体.这些连续的薄膜和长线,将纳米级的碳管变成宏观可操控的客体,将碳纳米管优异的物理化学性质带到各种宏观应用,打开了一条从纳米世界通向宏观应用之路.该文将介绍超顺排碳纳米管在宏观尺度的应用和基于超顺排碳纳米管的产品,如高分辨透射电子显微镜用碳纳米管微栅,透明柔性可拉伸的碳纳米管薄膜扬声器,碳纳米管触摸屏等.     

低噪声、宽谱响应的碳纳米管薄膜-石墨烯复合光探测器

采用高纯半导体碳纳米管薄膜和石墨烯构建复合结构光探测器, 研究其光电响应特性。结果表明, 在光照下, 顶层石墨烯中的光生载流子通过碳纳米管与石墨烯之间薄的非晶硅层, 隧穿至底层的碳纳米管薄膜中, 在非晶硅层两侧分别富集电子和空穴, 形成光致栅压(Photogating), 有效地改变了碳纳米管薄膜晶体管的电流。器件在可见光(633 nm)条件下得到响应度为83 mA/W, 并在近红外波段范围内仍保持好的光响应特性。由于石墨烯具有宽谱光吸收特性, 半导体碳纳米管薄膜晶体管具有小的暗电流, 碳纳米管–石墨烯复合光探测器发挥了两种材料的优势, 为今后高性能宽谱光电探测器的制备奠定了基础。     

Luminescence of carbon nanotube bulbs

Carbon nanotube (CNT) bulbs made of decimeter-scale double-walled carbon nanotube (DWCNT) strands and films were fabricated and their luminescence properties, including the lighting efficiency, voltage-current relation and thermal stability were investigated. The results show that the DWCNT bulb has a comparable spectrum of visible light with tungsten bulb and its average efficiency is 40% higher than that of a tungsten filament at the same temperature (1400―2300 K). The nanotube filaments show both resistance and thermal stability over a large temperature region. No obvious damage was found for a nanotube bulb illuminating at 2300 K for more than 24 hours in vacuum.     

聚苯乙炔/碳纳米管复合材料的制备及导电性

以无水A lC l3为催化剂合成了聚苯乙炔(PPA)、用浓H2SO4进行磺化改性,并通过共混制得了PPA/碳纳米管(CNT)及磺化PPA/CNT复合材料;研究了复合材料的导电性及电导率与CNT含量的关系。结果表明:磺化PPA/CNT导电阈值比PPA/CNT的降低了1%,前者达到极限电导率所需CNT的量是后者的10%;X-射线衍射(XRD)测试表明,在CNT界面上的磺化PPA有新的晶型产生。     

P型金刚石薄膜压阻效应的理论研究

结合形变势理论和价带分裂模型,对硼掺杂Ｐ型金刚石薄膜的压阻效应进行了分析和讨论。结果表明,金刚石中轻、重空穴有效质量的巨大差异是导致其具有显著压阻效应的主要原因之一。并推导出应变诱导轻、重空穴带分裂时压阻因子的近似计算公式,计算结果与实验结果一致。     

射频磁控溅射制备CdS多晶薄膜及其性能研究

在室温和不同功率下,用射频磁控溅射法在玻璃衬底上制备了CdS薄膜.运用探针式台阶仪、x射线衍射分析仪、紫外可见分光光度计、扫描电镜(SEM)等仪器对制备的CdS薄膜进行了表征分析.主要研究讨论了溅射功率对薄膜性质的影响.结果表明:制备的CdS薄膜为立方相和六方相的混合晶相,沿着六方(002)、(004)方向和立方(111)、(222)方向有着明显的择优取向;随着功率的增加,薄膜的厚度增加,晶粒的尺寸增大,光学吸收边红移.通过优化实验参数,在室温、0.6Pa、30W、纯氩气气氛条件下可以制备出结晶性能良好的CdS薄膜,禁带宽度为2.36eV.     

硫化温度对两步法制备FeS2薄膜性能的影响

在553 K、573 K、603 K、653 K、673 K硫化温度下用两步法制备FeS2薄膜。分析了所制薄膜的结构及光电性能等,同时还研究了硫化温度对两步法制备FeS2薄膜的影响规律。     

碳纳米管平板显示器有限差分法模拟

采用有限差分法,根据碳纳米管平板显示器的特点选择合适的边界条件,分析了碳纳米管平板显示器内部的电场分布和场增强因子随碳纳米管直径、长度和碳纳米管之间间隔的变化关系。计算结果表明,当碳纳米管之间间隔大于碳纳米管长度3倍时,碳纳米管之间的屏蔽效应可以忽略不计,电场强度和场增强因子随碳纳米管长度增大而线性地增大,当碳纳米管直径较小时,电场强度和场增强因子随碳纳米管直径减小迅速增大。     

Field emission study of CNTs on metal tips

The field emission characteristics of multiwalled carbon nanotubes grown on metal tips are studied at various temperatures. It is found that emission current at a given applied electric field increased with the temperature, and the stability of the current did not change. The dependence upon temperature varies quite differently with the metal substrates. This may result from the asymmetry of the CNTs and the interface effect between CNT and underlay.     

掺杂氧化锌薄膜的结构与刻蚀性能研究

本文利用中频反应磁控溅射方法,以Zn/Al (98 : 2) (wt. %)合金靶为靶材,制备了综合性能优良的铝掺杂氧化锌（ZnO:Al, AZO）透明导电薄膜. 研究了沉积工艺对薄膜结构、电学及光学性能的影响,分析了AZO薄膜的刻蚀性能以及所制备的绒面结构特性. 结果表明：基体温度对薄膜生长有较大的影响,当温度为150℃时,薄膜具有较好的晶化率,晶粒呈明显的柱状生长,晶界间结合紧密,薄膜的电阻率为4.6×10-4Ωcm. 镀膜时基体的移动速度会影响薄膜的晶体生长方式,但对其沉积速率影响不大. 具有择优生长特性、形成柱状晶组织的薄膜经稀盐酸腐蚀后,其表面呈规则的粗糙形貌;此结构有利于充分捕集太阳光,从而提高薄膜太阳电池的效率.     

碳纳米管-铜纳米线复合结构的形成和热力学稳定性

通过分子动力学的方法研究了碳纳米管填充一定数量的铜纳米粒子形成碳纳米管-铜纳米线(CNT/CuNW)复合结构的过程.通过构象演变和体系能量的变化,可以将整个的铜粒子填充碳纳米管的过程中可分为三个过程:构象调整,填充吸附和构象稳定.对比分析高温下包裹和填充形成CNT/CuNW复合结构的变化,可以看出填充形成的CNT/CuNW的稳定性比包裹形成的CNT/CuNW的稳定性要好.通过径对径向分布函数的分析,可以进一步确定,在填充形成的复合结构的熔点要比包裹形成的CNT/CuNW的高,这主要归因于碳纳米管高的热稳定性.     

石墨烯量子点用于修复石墨烯结构缺陷及其薄膜导热性能研究

为解决GO制备过程中,不可避免引入的石墨烯拓扑结构缺陷对热传递性能的显著影响,研究采用石墨烯量子点(GQDs)作为外部碳源,通过在高温条件下修复石墨烯中的拓扑结构缺陷,制备出了自支撑的石墨化–氧化石墨烯/石墨烯量子点(g-GO/GQDs)散热薄膜。与原始的gGO膜相比,g-GO/GQDs薄膜的面内热导率提高了22.1%,达到739.04 W/(m·K)。通过进一步的薄膜结构分析,发现其热导率的提高可归因于石墨化过程中sp2碳晶格域的恢复和形成。石墨烯导热薄膜的散热性能研究表明,该研究结果可有效提高石墨烯薄膜的散热效果,为制备高性能散热薄膜提供了新思路。     

C60-PMMA复合膜的红外光谱研究

用溶胶-凝胶法制备了C60-PMMA复合膜,研究了该膜的红外吸收谱,发现复合膜的红外吸收光谱在C60特征峰(1 182 cm-1和1 428 cm-1)附近,相对PMMA有明显的"红移"宽化.理论上,采用Gaussian98计算方法,得到了C60分子和带有电荷的C60的红外振动频率.研究表明:复合膜的红外谱 "红移"宽化是C60与PMMA之间的电荷转移导致C60红外特征峰红移引起的.