Inkjet printing of single-crystal films

The use of single crystals has been fundamental to the development of semiconductor microelectronics and solid-state science. Whether based on inorganic or organic materials, the devices that show the highest performance rely on single-crystal interfaces, with their nearly perfect translational symmetry and exceptionally high chemical purity. Attention has recently been focused on developing simple ways of producing electronic devices by means of printing technologies. 'Printed electronics' is being explored for the manufacture of large-area and flexible electronic devices by the patterned application of functional inks containing soluble or dispersed semiconducting materials. However, because of the strong self-organizing tendency of the deposited materials, the production of semiconducting thin films of high crystallinity (indispensable for realizing high carrier mobility) may be incompatible with conventional printing processes. Here we develop a method that combines the technique of antisolvent crystallization with inkjet printing to produce organic semiconducting thin films of high crystallinity. Specifically, we show that mixing fine droplets of an antisolvent and a solution of an active semiconducting component within a confined area on an amorphous substrate can trigger the controlled formation of exceptionally uniform single-crystal or polycrystalline thin films that grow at the liquid-air interfaces. Using this approach, we have printed single crystals of the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C(8)-BTBT) (ref. 15), yielding thin-film transistors with average carrier mobilities as high as 16.4?cm(2)?V(-1)?s(-1). This printing technique constitutes a major step towards the use of high-performance single-crystal semiconductor devices for large-area and flexible electronics applications.     

Patterning organic single-crystal transistor arrays

Field-effect transistors made of organic single crystals are ideal for studying the charge transport characteristics of organic semiconductor materials. Their outstanding device performance, relative to that of transistors made of organic thin films, makes them also attractive candidates for electronic applications such as active matrix displays and sensor arrays. These applications require minimal cross-talk between neighbouring devices. In the case of thin film systems, simple patterning of the active semiconductor layer minimizes cross-talk. But when using organic single crystals, the only approach currently available for creating arrays of separate devices is manual selection and placing of individual crystals-a process prohibitive for producing devices at high density and with reasonable throughput. In contrast, inorganic crystals have been grown in extended arrays, and efficient and large-area fabrication of silicon crystalline islands with high mobilities for electronic applications has been reported. Here we describe a method for effectively fabricating large arrays of single crystals of a wide range of organic semiconductor materials directly onto transistor source-drain electrodes. We find that film domains of octadecyltriethoxysilane microcontact-printed onto either clean Si/SiO(2) surfaces or flexible plastic provide control over the nucleation of vapour-grown organic single crystals. This allows us to fabricate large arrays of high-performance organic single-crystal field-effect transistors with mobilities as high as 2.4 cm(2) V(-1) s(-1) and on/off ratios greater than 10(7), and devices on flexible substrates that retain their performance after significant bending. These results suggest that our fabrication approach constitutes a promising step that might ultimately allow us to utilize high-performance organic single-crystal field-effect transistors for large-area electronics applications.     

Electroluminescence from single monolayers of nanocrystals in molecular organic devices

The integration of organic and inorganic materials at the nanometre scale into hybrid optoelectronic structures enables active devices that combine the diversity of organic materials with the high-performance electronic and optical properties of inorganic nanocrystals. The optimization of such hybrid devices ultimately depends upon the precise positioning of the functionally distinct materials. Previous studies have already emphasized that this is a challenge, owing to the lack of well-developed nanometre-scale fabrication techniques. Here we demonstrate a hybrid light-emitting diode (LED) that combines the ease of processability of organic materials with the narrow-band, efficient luminescence of colloidal quantum dots (QDs). To isolate the luminescence processes from charge conduction, we fabricate a quantum-dot LED (QD-LED) that contains only a single monolayer of QDs, sandwiched between two organic thin films. This is achieved by a method that uses material phase segregation between the QD aliphatic capping groups and the aromatic organic materials. In our devices, where QDs function exclusively as lumophores, we observe a 25-fold improvement in luminescence efficiency (1.6 cd A(-1) at 2,000 cd m(-2)) over the best previous QD-LED results. The reproducibility and precision of our phase-segregation approach suggests that this technique could be widely applicable to the fabrication of other hybrid organic/inorganic devices.     

Sensitivity gains in chemosensing by lasing action in organic polymers

Societal needs for greater security require dramatic improvements in the sensitivity of chemical and biological sensors. To meet this challenge, increasing emphasis in analytical science has been directed towards materials and devices having highly nonlinear characteristics; semiconducting organic polymers (SOPs), with their facile excited state (exciton) transport, are prime examples of amplifying materials. SOPs have also been recognized as promising lasing materials, although the susceptibility of these materials to optical damage has thus far limited applications. Here we report that attenuated lasing in optically pumped SOP thin films displays a sensitivity to vapours of explosives more than 30 times higher than is observed from spontaneous emission. Critical to this achievement was the development of a transducing polymer with high thin-film quantum yield, a high optical damage threshold in ambient atmosphere and a record low lasing threshold. Trace vapours of the explosives 2,4,6-trinitrotoluene (TNT) and 2,4-dinitrotoluene (DNT) introduce non-radiative deactivation pathways that compete with stimulated emission. We demonstrate that the induced cessation of the lasing action, and associated sensitivity enhancement, is most pronounced when films are pumped at intensities near their lasing threshold. The combined gains from amplifying materials and lasing promise to deliver sensors that can detect explosives with unparalleled sensitivity.     

Single-nanowire electrically driven lasers

Electrically driven semiconductor lasers are used in technologies ranging from telecommunications and information storage to medical diagnostics and therapeutics. The success of this class of lasers is due in part to well-developed planar semiconductor growth and processing, which enables reproducible fabrication of integrated, electrically driven devices. Yet this approach to device fabrication is also costly and difficult to integrate directly with other technologies such as silicon microelectronics. To overcome these issues for future applications, there has been considerable interest in using organic molecules, polymers, and inorganic nanostructures for lasers, because these materials can be fashioned into devices by chemical processing. Indeed, amplified stimulated emission and lasing have been reported for optically pumped organic systems and, more recently, inorganic nanocrystals and nanowires. However, electrically driven lasing, which is required in most applications, has met with several difficulties in organic systems, and has not been addressed for assembled nanocrystals or nanowires. Here we investigate the feasibility of achieving electrically driven lasing from individual nanowires. Optical and electrical measurements made on single-crystal cadmium sulphide nanowires show that these structures can function as Fabry-Perot optical cavities with mode spacing inversely related to the nanowire length. Investigations of optical and electrical pumping further indicate a threshold for lasing as characterized by optical modes with instrument-limited linewidths. Electrically driven nanowire lasers, which might be assembled in arrays capable of emitting a wide range of colours, could improve existing applications and suggest new opportunities.     

Progress on Sn-based thin-film anode materials for lithium-ion batteries

Thin-film lithium-ion batteries are the most competitive power sources for various kinds of micro-electro-mechanical systems and have been extensively researched.The present paper reviews the recent progress on Sn-based thin-film anode materials,with particular emphasis on the preparation and performances of pure Sn,Sn-based alloy,and Sn-based oxide thin films.From this survey,several conclusions can be drawn concerning the properties of Sn-based thin-film anodes.Pure Sn thin films deliver high reversible capacity but very poor cyclability due to the huge volume changes that accompany lithium insertion/extraction.The cycle performance of Sn-based intermetallic thin films can be enhanced at the expense of their capacities by alloying with inactive transition metals.In contrast to anodes in which Sn is alloyed with inactive transition metals,Sn-based nanocomposite films deliver high capacity with enhanced cycle performance through the incorporation of active elements.In comparison with pure Sn anodes,Sn-based oxide thin films show greatly enhanced cyclability due to the in situ formation of Sn nanodispersoids in an Li2O matrix,although there is quite a large initial irreversible capacity loss.For all of these anodes,substantial improvements have been achieved by micro-nanostructure tuning of the active materials.Based on the progress that has already been made on the relationship between the properties and microstructures of Sn-based thin-film anodes,it is believed that manipulating the multi-phase and multi-scale structures offers an important means of further improving the capacity and cyclability of Sn-based alloy thin-film anodes.     

Efficient organic photovoltaic diodes based on doped pentacene

Recent work on solar cells based on interpenetrating polymer networks and solid-state dye-sensitized devices shows that efficient solar-energy conversion is possible using organic materials. Further, it has been demonstrated that the performance of photovoltaic devices based on small molecules can be effectively enhanced by doping the organic material with electron-accepting molecules. But as inorganic solar cells show much higher efficiencies, well above 15 per cent, the practical utility of organic-based cells will require their fabrication by lower-cost techniques, ideally on flexible substrates. Here we demonstrate efficiency enhancement by molecular doping in Schottky-type photovoltaic diodes based on pentacene--an organic semiconductor that has received much attention as a promising material for organic thin-film transistors, but relatively little attention for use in photovoltaic devices. The incorporation of the dopant improves the internal quantum efficiency by more than five orders of magnitude and yields an external energy conversion efficiency as high as 2.4 per cent for a standard solar spectrum. Thin-film devices based on doped pentacene therefore appear promising for the production of efficient 'plastic' solar cells.     

Solution-processed silicon films and transistors

The use of solution processes-as opposed to conventional vacuum processes and vapour-phase deposition-for the fabrication of electronic devices has received considerable attention for a wide range of applications, with a view to reducing processing costs. In particular, the ability to print semiconductor devices using liquid-phase materials could prove essential for some envisaged applications, such as large-area flexible displays. Recent research in this area has largely been focused on organic semiconductors, some of which have mobilities comparable to that of amorphous silicon (a-Si); but issues of reliability remain. Solution processing of metal chalcogenide semiconductors to fabricate stable and high-performance transistors has also been reported. This class of materials is being explored as a possible substitute for silicon, given the complex and expensive manufacturing processes required to fabricate devices from the latter. However, if high-quality silicon films could be prepared by a solution process, this situation might change drastically. Here we demonstrate the solution processing of silicon thin-film transistors (TFTs) using a silane-based liquid precursor. Using this precursor, we have prepared polycrystalline silicon (poly-Si) films by both spin-coating and ink-jet printing, from which we fabricate TFTs with mobilities of 108 cm2 V(-1) s(-1) and 6.5 cm2 V(-1) s(-1), respectively. Although the processing conditions have yet to be optimized, these mobilities are already greater than those that have been achieved in solution-processed organic TFTs, and they exceed those of a-Si TFTs (< or = 1 cm2 V(-1) s(-1)).     

金属-有机骨架(MOFs)的最新研究进展

作为一种新型的多功能分子基材料,金属-有机骨架化合物因其有机-无机杂化特性、结构上的有序性和可裁剪性、微孔性、特殊的光电磁性质及工业上的潜在运用而备受关注。它作为多孔材料,与无机或有机的多孔材料相比具有特殊的优势,是目前新功能材料研究领域的一个热点。文中概述了近些年发展起来的新兴领域:金属-有机骨架薄膜,发光金属-有机骨架材料及纳米级金属-有机骨架材料,对它们的研究进展及设计合成进行了总结。     

A soluble and air-stable organic semiconductor with high electron mobility

Electronic devices based on organic semiconductors offer an attractive alternative to conventional inorganic devices due to potentially lower costs, simpler packaging and compatibility with flexible substrates. As is the case for silicon-based microelectronics, the use of complementary logic elements-requiring n- and p-type semiconductors whose majority charge carriers are electrons and holes, respectively-is expected to be crucial to achieving low-power, high-speed performance. Similarly, the electron-segregating domains of photovoltaic assemblies require both n- and p-type semiconductors. Stable organic p-type semiconductors are known, but practically useful n-type semiconductor materials have proved difficult to develop, reflecting the unfavourable electrochemical properties of known, electron-demanding polymers. Although high electron mobilities have been obtained for organic materials, these values are usually obtained for single crystals at low temperatures, whereas practically useful field-effect transistors (FETs) will have to be made of polycrystalline films that remain functional at room temperature. A few organic n-type semiconductors that can be used in FETs are known, but these suffer from low electron mobility, poor stability in air and/or demanding processing conditions. Here we report a crystallographically engineered naphthalenetetracarboxylic diimide derivative that allows us to fabricate solution-cast n-channel FETs with promising performance at ambient conditions. By integrating our n-channel FETs with solution-deposited p-channel FETs, we are able to produce a complementary inverter circuit whose active layers are deposited entirely from the liquid phase. We expect that other complementary circuit designs can be realized by this approach as well.     

The path to ubiquitous and low-cost organic electronic appliances on plastic

Organic electronics are beginning to make significant inroads into the commercial world, and if the field continues to progress at its current, rapid pace, electronics based on organic thin-film materials will soon become a mainstay of our technological existence. Already products based on active thin-film organic devices are in the market place, most notably the displays of several mobile electronic appliances. Yet the future holds even greater promise for this technology, with an entirely new generation of ultralow-cost, lightweight and even flexible electronic devices in the offing, which will perform functions traditionally accomplished using much more expensive components based on conventional semiconductor materials such as silicon.     

晶圆级二维单晶材料生长的研究进展

低维材料因其原子级的物理尺寸而拥有独特的物理化学性质. 以石墨烯为代表的二维材料具有优越的光学、电学、力学及热学性能,在电子、光电、能源、催化等领域具有巨大的应用潜力. 大尺寸、高质量的单晶材料是大规模高端器件的应用基础. 为此,研究者们致力于实现晶圆级二维单晶材料的制造研究. 利用化学气相沉积法(CVD)制备二维材料具有薄膜质量高、可控性强、均匀性好等优点,因此,CVD成为制备高质量二维单晶材料的首选. 文章从二维导电石墨烯、绝缘氮化硼和半导体过渡金属硫族化合物入手,总结了近年来利用CVD技术外延制造二维单晶薄膜的研究进展,讨论了大面积二维单晶材料的制备策略与生长机理,指出了目前存在的问题,对未来高质量二维单晶薄膜的制备方法进行了展望. 该综述为进一步推动二维单晶材料的规模化应用提供借鉴.     

LB膜分子系统及其性能

尽管LB膜还存在着很多待研究的问题,尚不能予以广泛地应用,但是LB技术较之其它有机薄膜的形成方法却有许多优越性,有助于新型材料的研制,因此越来越多的科学家对此产生了浓厚的兴趣,做了大量的工作,使得人们对此领域有了更进一步的认识。本文将LB膜的一些重要性质作了概括,其中包括单分子膜的形成、累积单分子膜中的能量转移及化学反应等。     

有机薄膜电致发光器件的研究进展（综述）

对近几年来有机薄膜电致发光（ＥＬ）器件的研究进展进行了综合评停和分析,有机薄膜ＥＬ器件是近年来国际上研究的一个热点,该器件具有可与集成电路相匹配,直流电压低,发光亮度高,以及它与无机薄膜相比较易实现多色显示等优点。     

A combustion-free methodology for synthesizing zeolites and zeolite-like materials

Zeolites are mainly used for the adsorption and separation of ions and small molecules, and as heterogeneous catalysts. More recently, these materials are receiving attention in other applications, such as medical diagnosis and as components in electronic devices. Modern synthetic methodologies for preparing zeolites and zeolite-like materials typically involve the use of organic molecules that direct the assembly pathway and ultimately fill the pore space. Removal of these enclathrated species normally requires high temperature combustion that destroys this high cost component, and the associated energy release in combination with the formed water can be extremely detrimental to the inorganic structure. Here we report a synthetic methodology that avoids these difficulties by creating organic structure-directing agents (SDAs) that can be disassembled within the zeolite pore space to allow removal of their fragments for possible use again by reassembly. The methodology is shown for the synthesis of zeolite ZSM-5 using a SDA that contains a cyclic ketal group that is removed from the SDA while it is inside the zeolite without destruction of the inorganic framework. This approach should be applicable to the synthesis of a wide variety of inorganic and organometallic structures.     

Self-assembly of mesoscopically ordered chromatic polydiacetylene/silica nanocomposites

Nature abounds with intricate composite architectures composed of hard and soft materials synergistically intertwined to provide both useful functionality and mechanical integrity. Recent synthetic efforts to mimic such natural designs have focused on nanocomposites, prepared mainly by slow procedures like monomer or polymer infiltration of inorganic nanostructures or sequential deposition. Here we report the self-assembly of conjugated polymer/silica nanocomposite films with hexagonal, cubic or lamellar mesoscopic order using polymerizable amphiphilic diacetylene molecules as both structure-directing agents and monomers. The self-assembly procedure is rapid and incorporates the organic monomers uniformly within a highly ordered, inorganic environment. Polymerization results in polydiacetylene/silica nanocomposites that are optically transparent and mechanically robust. Compared to ordered diacetylene-containing films prepared as Langmuir monolayers or by Langmuir-Blodgett deposition, the nanostructured inorganic host alters the diacetylene polymerization behaviour, and the resulting nanocomposite exhibits unusual chromatic changes in response to thermal, mechanical and chemical stimuli. The inorganic framework serves to protect, stabilize, and orient the polymer, and to mediate its function. The nanocomposite architecture also provides sufficient mechanical integrity to enable integration into devices and microsystems.     

Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films

Amorphous metal-oxide semiconductors have emerged as potential replacements for organic and silicon materials in thin-film electronics. The high carrier mobility in the amorphous state, and excellent large-area uniformity, have extended their applications to active-matrix electronics, including displays, sensor arrays and X-ray detectors. Moreover, their solution processability and optical transparency have opened new horizons for low-cost printable and transparent electronics on plastic substrates. But metal-oxide formation by the sol-gel route requires an annealing step at relatively high temperature, which has prevented the incorporation of these materials with the polymer substrates used in high-performance flexible electronics. Here we report a general method for forming high-performance and operationally stable metal-oxide semiconductors at room temperature, by deep-ultraviolet photochemical activation of sol-gel films. Deep-ultraviolet irradiation induces efficient condensation and densification of oxide semiconducting films by photochemical activation at low temperature. This photochemical activation is applicable to numerous metal-oxide semiconductors, and the performance (in terms of transistor mobility and operational stability) of thin-film transistors fabricated by this route compares favourably with that of thin-film transistors based on thermally annealed materials. The field-effect mobilities of the photo-activated metal-oxide semiconductors are as high as 14 and 7?cm(2)?V(-1)?s(-1) (with an Al(2)O(3) gate insulator) on glass and polymer substrates, respectively; and seven-stage ring oscillators fabricated on polymer substrates operate with an oscillation frequency of more than 340?kHz, corresponding to a propagation delay of less than 210?nanoseconds per stage.     

High-performance thin-film transistors using semiconductor nanowires and nanoribbons

Thin-film transistors (TFTs) are the fundamental building blocks for the rapidly growing field of macroelectronics. The use of plastic substrates is also increasing in importance owing to their light weight, flexibility, shock resistance and low cost. Current polycrystalline-Si TFT technology is difficult to implement on plastics because of the high process temperatures required. Amorphous-Si and organic semiconductor TFTs, which can be processed at lower temperatures, but are limited by poor carrier mobility. As a result, applications that require even modest computation, control or communication functions on plastics cannot be addressed by existing TFT technology. Alternative semiconductor materials that could form TFTs with performance comparable to or better than polycrystalline or single-crystal Si, and which can be processed at low temperatures over large-area plastic substrates, should not only improve the existing technologies, but also enable new applications in flexible, wearable and disposable electronics. Here we report the fabrication of TFTs using oriented Si nanowire thin films or CdS nanoribbons as semiconducting channels. We show that high-performance TFTs can be produced on various substrates, including plastics, using a low-temperature assembly process. Our approach is general to a broad range of materials including high-mobility materials (such as InAs or InP).     

有机电致发光的过去、现在和未来

简要介绍了有机电致发光器件的过去、现在和未来．在激子利用机制上,有机电致发光材料经历了3代更迭,最近人们又提出了几种新的方法来提高激子利用率．与此同时,结合机器学习和人工智能等新型数据驱动技术也成为目前探索新颖高效有机电致发光材料的趋势．有机电致发光器件在经历了60多年的发展后,已经成功地从实验室走进千家万户,正慢慢地改善着人们的生活．      

Single-crystal gallium nitride nanotubes

Since the discovery of carbon nanotubes in 1991 (ref. 1), there have been significant research efforts to synthesize nanometre-scale tubular forms of various solids. The formation of tubular nanostructure generally requires a layered or anisotropic crystal structure. There are reports of nanotubes made from silica, alumina, silicon and metals that do not have a layered crystal structure; they are synthesized by using carbon nanotubes and porous membranes as templates, or by thin-film rolling. These nanotubes, however, are either amorphous, polycrystalline or exist only in ultrahigh vacuum. The growth of single-crystal semiconductor hollow nanotubes would be advantageous in potential nanoscale electronics, optoelectronics and biochemical-sensing applications. Here we report an 'epitaxial casting' approach for the synthesis of single-crystal GaN nanotubes with inner diameters of 30-200 nm and wall thicknesses of 5-50 nm. Hexagonal ZnO nanowires were used as templates for the epitaxial overgrowth of thin GaN layers in a chemical vapour deposition system. The ZnO nanowire templates were subsequently removed by thermal reduction and evaporation, resulting in ordered arrays of GaN nanotubes on the substrates. This templating process should be applicable to many other semiconductor systems.