溶液法制备单晶的研究进展

单晶材料的优异性能和应用前景已经引起人们广泛关注,溶液法制备单晶是当前应用最多的方法.从单晶的生长原理方面分析各个制备方法的特点和注意事项,总结了常温溶液法、水热法和扩散法.     

MAPbCl3单晶光电探测器的制备及表征

作为新一代半导体材料,金属-卤化物钙钛矿以其大的光吸收系数、长的载流子扩散长度和高载流子迁移率等优异特性被研究者广泛关注.与多晶相比,钙钛矿单晶材料具有更低的缺陷态密度并且没有晶界,有望提高光电探测器性能.为了研究MAPbCl3单晶的光电探测性能,采用反向升温法制备了大块MAPbCl3单晶,然后采用真空热蒸发法在其表面...     

N-乙基壳聚糖的单晶

用光固化法制备N—乙基壳聚糖／聚丙烯酸复合膜．在复合膜中观察到单晶和悬挂着单晶片的微纤．单晶的长和宽约为300-400nm，比常见的品粒尺寸小得多．与通常单晶的极稀溶液制备条件不同，该单晶是在复合膜中形成的．水的诱导结晶作用和体系的高浓度形成了一种几乎是无限缓慢的结晶条件，单晶正是由于这样条件才能得以形成。     

LiNbO3单晶光纤的芯—包层波导结构

利用激光加热基座法生长了铌酸锂单晶光纤。通过镁离子内扩散以改变晶纤表层的成分，首次在国内实现了沿不同轴向生长的铌酸锂单晶光纤的芯－包层波导结构，通过对扩散参数的控制，实现了晶纤维层具有均匀和势折射率分布。并对包层后的晶纤特性进行了分析和讨论。     

C_(60)单晶制备和微观机制

Ｃ６０单晶制备中的粉末残留问题是影响该实验成功和单晶品质的一个重要问题．我们经过大量实验，研究出一种在高真空管式炉中生长出较好质量单晶的工艺条件，克服了粉末残角问题．还对这一工艺中单晶生长的动力学非平衡过程的微观机制进行了分析，为制备大的Ｃ６０单晶提供了理论依据．此工艺也为制备其它材料的单晶提供了一个可借鉴的实验方法．     

金刚石薄膜/立方氮化硼异质结的制备

利用高温高压合成的立方氮化硼单晶材料,采用恒浓度高温扩散方法制备n型立方氮化硼半导体材料。通过化学气相沉积方法在n型立方氮化硼上外延生长p型金刚石薄膜。在此基础上,通过欧姆接触电极的制作,制备出金刚石薄膜／立方氮化硼异质pn结,并给出pn结的伏安特性曲线。     

体扩散对TGFB单晶生长的影响研究

本文通过动态体视显微法研究了溶液流速对ＴＧＦＢ晶面生长速率的影响，结合晶胞参数和生长溶液的密度、粘度等物理性质的测定，得出了ＴＧＦＢ单晶生长时的体扩散系数约为１０－６ｃｍ２／ｓ．讨论了要消除体扩散的影响，用转晶法生长单晶时掣晶盘的转速不应低于５２ｒ／ｍｉｎ．     

Pr3Co单晶的Czochralski pulling法制备研究

笔者对用Czochralski pulling法制备Pr3Co单晶的生条件进行了研究，首次用此法成功地制备了Pr3Co单晶，为研究其物理特性提出了必要条件。     

DD402／FGH95扩散偶中单晶合金γ‘相筏形化与其形成元素的扩散

通过研究不同温度时热等静压（HIP）多元扩散偶DD402／FGH95中的Al,Ta和Ti元素的扩散规律，发现DD402单晶中存在Al和Ta元素的上坡扩散，因此单晶中在近结合界面处形成了Al，Ta和Ti元素的富集区以及γ‘相的筏形化，对Al和Ta元素的扩散流量及扩散深度进行计算。计算结果与试验结果相吻合。     

R_3Co单晶制备方法的研究

本文对单晶的生长条件进行了研究，用Ｂｒｉｇｄｍａｎ方法成功地制备了Ｒ３Ｃｏ单晶试料，为进一步研究其物性提供了必要的条件．     

晶圆级二维单晶材料生长的研究进展

低维材料因其原子级的物理尺寸而拥有独特的物理化学性质. 以石墨烯为代表的二维材料具有优越的光学、电学、力学及热学性能,在电子、光电、能源、催化等领域具有巨大的应用潜力. 大尺寸、高质量的单晶材料是大规模高端器件的应用基础. 为此,研究者们致力于实现晶圆级二维单晶材料的制造研究. 利用化学气相沉积法(CVD)制备二维材料具有薄膜质量高、可控性强、均匀性好等优点,因此,CVD成为制备高质量二维单晶材料的首选. 文章从二维导电石墨烯、绝缘氮化硼和半导体过渡金属硫族化合物入手,总结了近年来利用CVD技术外延制造二维单晶薄膜的研究进展,讨论了大面积二维单晶材料的制备策略与生长机理,指出了目前存在的问题,对未来高质量二维单晶薄膜的制备方法进行了展望. 该综述为进一步推动二维单晶材料的规模化应用提供借鉴.     

改性氨基聚硅氧烷膜与膜形貌及应用

用原子力显微镜(AFM)和接触角测量仪对乙酸酐改性氨基聚硅氧烷的成膜性及膜形态进行了研究。结果发现,氨基聚硅氧烷在单晶硅基底上均能成膜,但不同氨基聚硅氧烷所形成的膜形貌是不同的,膜的表面形貌实际上与基团的排列方式有关,氨乙基氨丙基聚二甲基硅氧烷在单晶硅基底上形成均匀、平整、光滑的疏水膜;而乙酸酐改性的氨乙基氨丙基聚二甲基硅氧烷则形成凹凸不平、粗糙的具有弱亲水性的非均匀膜。     

Optical characterization of single-crystal diamond grown by DC arc plasma jet CVD

Optical centers of single-crystal diamond grown by DC arc plasma jet chemical vapor deposition (CVD) were examined using a low-temperature photoluminescence (PL) technique. The results show that most of the nitrogen-vacancy (NV) complexes are present as NV-centers, although some H2 and H3 centers and B-aggregates are also present in the single-crystal diamond because of nitrogen aggregation resulting from high N₂ incorporation and the high mobility of vacancies under growth temperatures of 950-1000℃. Furthermore, emissions of radiation-induced defects were also detected at 389, 467.5, 550, and 588.6 nm in the PL spectra. The reason for the formation of these radiation-induced defects is not clear. Although a Ni-based alloy was used during the diamond growth, Ni-related emissions were not detected in the PL spectra. In addition, the silicon-vacancy (Si-V)-related emission line at 737 nm, which has been observed in the spectra of many previously reported microwave plasma chemical vapor deposition (MPCVD) synthetic diamonds, was absent in the PL spectra of the single-crystal diamond prepared in this work. The high density of NV- centers, along with the absence of Ni-related defects and Si-V centers, makes the single-crystal diamond grown by DC arc plasma jet CVD a promising material for applications in quantum computing.     

Growth dynamics of pentacene thin films

The recent demonstration of single-crystal organic optoelectronic devices has received widespread attention. But practical applications of such devices require the use of inexpensive organic films deposited on a wide variety of substrates. Unfortunately, the physical properties of these organic thin films do not compare favourably to those of single-crystal materials. Moreover, the basic physical principles governing organic thin-film growth and crystallization are not well understood. Here we report an in situ study of the evolution of pentacene thin films, utilizing the real-time imaging capabilities of photoelectron emission microscopy. By a combination of careful substrate preparation and surface energy control, we succeed in growing thin films with single-crystal grain sizes approaching 0.1 millimetre (a factor of 20-100 larger than previously achieved), which are large enough to fully contain a complete device. We find that organic thin-film growth closely mimics epitaxial growth of inorganic materials, and we expect that strategies and concepts developed for these inorganic systems will provide guidance for the further development and optimization of molecular thin-film devices.     

基于朗道二级相变理论的铁单晶磁结构分析

利用朗道二级相变理论以及磁点群理论对于4种单晶铁,也就是阿尔法-铁、德尔塔-铁、伽马-铁以及伊普西龙-铁的磁结构进行了分析.其中,着重利用朗道二级相变理论中实现二级相变的条件和Birman的群选择定则来分析一定晶体结构的铁单晶如果发生顺磁铁磁相变后可能具有的空间对称性,进而得到铁单晶可能具有的磁结构.同时,得到的结论与之前文献报道中的结果进行了比较,发现符合得很好.     

Comparative crystal structure determination of griseofulvin: Powder X-ray diffraction versus single-crystal X-ray diffraction

In an attempt to compare crystal structure determination from powder data and single-crystal data,crystal structure of griseofulvin(C 17 H 17 ClO 6) was tested by both powder and single-crystal X-ray diffraction.Lattice parameters of griseofulvin are α=90.0°,a=b=8.9757,c=19.9345,V=1605.99 3 from powder data coinciding with α=90.0°,a=b=8.9714,c=19.8848,V=1600.46 3 from single-crystal data.Main processes of structure elucidating of griseofulvin by the two approaches were analyzed.Powder X-ray diffraction was demonstrated to be a powerful auxiliary implement to single-crystal X-ray diffraction in structure characterization,and its application can be popularized in the field of structure research of small organic molecules.     

可见光波段发光多孔硅膜的结构特征研究

采用在HF溶液中阳极处理硅单晶片的方法制备了具有可见光波段发光特性的多孔硅膜。应用X光衍射技术及激光喇曼散射谱研究了发光多孔硅膜的结构特征。研究结果表明:纳米量级尺寸是多孔硅膜的一个重要特征。估计多孔硅硅柱横截面直径在几到十几纳米之间。     

有机非线性材料DAST单晶微片的生长及研究

研发了一种有机非线性光学晶体4-(4-二甲基氨基苯乙烯基)甲基吡啶对甲基苯磺酸盐(DAST)单晶微片的生长方法。首先使用表面支持快速蒸发结晶法制备出了DAST微晶,再通过在甲醇的饱和蒸气压下自组装培养生长成DAST单晶微片。此方法获得的DAST单晶微片不仅厚度均一,而且具有极好的晶体表面质量。另外,还对DAST单晶微片的紫外可见吸收和荧光光谱以及二阶非线性进行了分析和研究。     

Single-crystal gallium nitride nanotubes

Since the discovery of carbon nanotubes in 1991 (ref. 1), there have been significant research efforts to synthesize nanometre-scale tubular forms of various solids. The formation of tubular nanostructure generally requires a layered or anisotropic crystal structure. There are reports of nanotubes made from silica, alumina, silicon and metals that do not have a layered crystal structure; they are synthesized by using carbon nanotubes and porous membranes as templates, or by thin-film rolling. These nanotubes, however, are either amorphous, polycrystalline or exist only in ultrahigh vacuum. The growth of single-crystal semiconductor hollow nanotubes would be advantageous in potential nanoscale electronics, optoelectronics and biochemical-sensing applications. Here we report an 'epitaxial casting' approach for the synthesis of single-crystal GaN nanotubes with inner diameters of 30-200 nm and wall thicknesses of 5-50 nm. Hexagonal ZnO nanowires were used as templates for the epitaxial overgrowth of thin GaN layers in a chemical vapour deposition system. The ZnO nanowire templates were subsequently removed by thermal reduction and evaporation, resulting in ordered arrays of GaN nanotubes on the substrates. This templating process should be applicable to many other semiconductor systems.     

Progress of phase-field investigations of γrafting in nickel-base single-crystal superalloys

With the development of nucleation theory,the calculation of phase diagrams(CALPHAD)method and microscopic elasto-plasticity mechanics,it is possible to apply the phase-field method to simulate the γrafting behavior of nickel-base single-crystal superalloys under the conditions of heat treatment,fatigue and creep testing.Based on the experimental progress in γrafting behavior and in combination with the microstructural simulation of the precipitation and rafting of c0phase,this paper reviews the phase-field investigation of γrafting in nickel–base single-crystal superalloys.