The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial films

The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial film was elucidated from the behavior of dislocations. The best quality GaN film was achieved when a nanoporous SiN x interlayer was grown on a rough layer, with the high-resolution X-ray diffraction rocking curve full width at half maximum for ( 1102 ) reflection decreasing to 223 arcs, and the total dislocation density reduced to less than 1.0×10 8 cm 2 . GaN films were grown on sapphire substrates by metal organic chemical vapor deposition. The quality of these films was investigated with high-resolution X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. A preference for the formation of half-loops to reduce threading dislocations was observed when an SiN x interlayer was grown on a rough layer. A growth mechanism is proposed to explain this preference.     

瓦斯浓度对爆炸压力及压力上升速率影响

不同的瓦斯浓度爆炸时产生的爆炸压力及压力上升速率是不同的。运用自行研制的实验系统,对不同瓦斯浓度对瓦斯爆炸压力及压力上升速率的影响进行了实验研究,得到了定容瓦斯爆炸最大爆炸压力、最大压力上升速率等特征参数;得出瓦斯浓度与瓦斯定容爆炸最大爆炸压力及最大压力上升速率呈二次函数关系,另外,国家目前在气体爆炸特性方面尚无统一的标准出台,文中所采用的实验设备以及实验方法为瓦斯爆炸特性实验标准的制订提供了依据。     

压力容器钢疲劳裂纹扩展速率曲线测试的小样本方法

提出了一种测试压力容器钢疲劳裂纹扩展速率的小样本方法,可以综合利用历史数据和当前试验数据确定疲劳裂纹扩展速率曲线.与仅能利用当前试验数据的传统方法相比,在精度相同的情况下,可以节省大量试件;在试件数量相同的情况下,可以大大提高测试精度.     

氧分压对Mn-Co-Ni-O纳米结构生长的影响

在脉冲激光沉积（pulsed laser deposition,PLD）法生长氧化物纳米材料的过程中,环境中的氧气对氧化物纳米结构的形成起着至关重要的作用。在溅射了Au纳米层的Si(111)衬底上,采用PLD法在不同氧分压下制备了Mn-Co-Ni-O纳米结构,并用X射线衍射仪（X-ray diffractometer,XRD）和场发射扫描电子显微镜（scanning electron microscope,SEM）表征了Mn-Co-Ni-O的结构特性和表面形貌。研究发现生长温度为750 ℃的Mn-Co-Ni-O微观结构与氧分压密切相关。在较低的氧分压环境下(1 Pa和5 Pa),Si衬底上生长的Mn-Co-Ni-O纳米锥结构是由Au催化的气–液–固(vapor-liquid-solid,VLS)生长机制控制。当氧分压增加到15 Pa,Mn-Co-Ni-O纳米结构的形态从纳米锥向纳米线转变,该过程是由VLS和气–固(vapor-solid,VS)生长机制共同作用。深入研究Mn-Co-Ni-O纳米结构的生长机制为获得更多的纳米线提供了理论基础。     

Effect of weld microstructure on brittle fracture initiation in the thermally-aged boiling water reactor pressure vessel head weld metal

Effects of the weld microstructure and inclusions on brittle fracture initiation are investigated in a thermally aged ferritic high-nickel weld of a reactor pressure vessel head from a decommissioned nuclear power plant.As-welded and reheated regions mainly consist of acicular and polygonal ferrite,respectively.Fractographic examination of Charpy V-notch impact toughness specimens reveals large inclusions(0.5-2.5μm)at the brittle fracture primary initiation sites.High impact energies were measured for the specimens in which brittle fracture was initiated from a small inclusion or an inclusion away from the V-notch.The density,geometry,and chemical composition of the primary initiation inclusions were investigated.A brittle fracture crack initiates as a microcrack either within the multiphase oxide inclusions or from the debonded interfaces between the uncracked inclusions and weld metal matrix.Primary fracture sites can be determined in all the specimens tested in the lower part of the transition curve at and below the 41-J reference impact toughness energy but not above the mentioned value because of the changes in the fracture mechanism and resulting changes in the fracture appearance.     

GaN纳米线的成核及生长机制研究

报道了利用CVD方法研究GaN纳米线的成核和生长机理的最新结果,着重强调了生长温度和催化剂对纳米线生长的影响。通过分析GaN纳 米线的形貌、显微结构与生长温度、催化剂等影响因素之间的依赖关系,详细研究了GaN纳米线的生长过程。这一结果有助于了解一维纳米结构的生长机理,实现纳米材料的可控制生长,并有可能直接应用于GaN纳米器件的制备。     

氩气分压与膜厚对溅射Al膜微结构及应力的影响

在不同氩气分压下,用直流溅射法在室温Si基片上制备了不同厚度的Al膜。用光学干涉相移法和X射线衍射技术,对薄膜应力和微结构进行了测试分析。微结构分析表明:制备的Al膜均呈多晶状态,晶体结构仍为面心立方;氩气分压分别为1Pa和3Pa的Al膜相比,1Pa下制备的薄膜结晶程度明显优于3Pa下制备的薄膜。1Pa下Al膜平均晶粒尺寸随膜厚的增加由17.9nm逐渐增大到26.3nm;晶格常数由0.4037nm增大到0.4047nm,均比标准值0.40496nm稍小。应力分析表明:同一工作气体压强(氩气分压)下,Al膜的平均应力随着膜厚的增加变小,应力分布趋向均匀。相同时间1Pa和3Pa的Al膜,其微结构和应力有较大差别。     

压力容器低周疲劳裂纹扩展率的工程计算方法

针对工程上常见的破坏性极大的压力容器的疲劳问题 ,提出了一个适合于压力容器的弹塑性疲劳裂纹扩展率计算公式 .该公式采用弹塑性分离的形式 ,主要适用于Paris区和高速扩展区的一部分 .通过公式的验证 ,说明该公式的合理性 ,并给出了便于应用的工程计算方法 .     

GaN(110)表面原子及电子结构的第一性原理研究

用缀加平面波加局域轨道方法计算了立方GaN及其非极性 ( 1 1 0 )表面的原子结构和电子结构 ,得到的GaN晶格常数及体积弹性模量与实验值符合得很好 .用层晶超原胞模型计算立方GaN ( 1 1 0 )表面的原子和电子结构 ,发现表面顶层原子发生键长收缩并旋转的弛豫特性 ,表面阳离子向体内移动 ,与周围阴离子形成sp2 杂化 ,而表面阴离子则形成p3 型锥形结构 .其面旋角为 1 4 .1°,比传统的Ⅲ V族半导体 ( 1 1 0 )表面面旋角 ( 30°± 2°)小得多 ,这主要与材料的离子性有关 .此外 ,在带隙附近还发现了两个表面态 ,一个是占据的表面态 ,主要是由N的p电子构成的 ;另一个是空态 ,主要由阳离子的轨道构成 .在驰豫后 ,这两个表面能带都移出带隙 ,分别进入导带和价带 ,形成共振表面态     

GaN相变及热力学性质的理论研究

利用基于密度泛函理论的第一原理方法研究了GaN的纤锌矿、闪锌矿、氯化钠三种结构的结构性质以及高压下GaN的相变.利用焓相等原理得出GaN从闪锌矿结构到氯化钠结构的相变压强约为41.9GPa,与实验值和他人理论计算值相符合.通过准谐德拜模型得到了GaN的闪锌矿和氯化钠两种结构不同温度下热膨胀系数与压强的关系,不同温度下体积与压强的关系以及不同压强下热容与温度的关系.     

电刷镀纳米镍薄膜表面形貌和沉积生长机理分析

采用电刷镀技术在铜基体表面上制备光亮的纳米镍薄膜。通过FESEM,AFM,SEM观察,分析纳米镍薄膜的二维和三维表面形貌。利用XRD估算纳米镍薄膜的晶粒平均尺寸,探讨纳米镍薄膜沉积生长机理。     

Effect of oxygen content on the structural and optical properties of ZnO films grown by atmospheric pressure MOCVD

Atmospheric pressure MOCVD was used to deposit ZnO layers on sapphire and homoepitaxial template under different oxygen flow rates.Oxygen content affects the lattice constant value and texture coefficient of the films as evidenced by the θ-2θ peaks position and their intensity.Films deposited at lower oxygen flow rate possess higher value of strain and stresses.ZnO films deposited at high oxygen flow rates show intense UV emissions while samples prepared under oxygen deficient conditions exhibited defect related emission along with UV luminescence.The results are compared to the ZnO films deposited homoepitaxially on annealed ZnO samples.The data obtained suggest that ZnO stoichiometry is responsible for the structural and optical quality of ZnO films.     

核反应堆压力容器模拟钢中富Cu纳米团簇析出早期阶段的研究

采用调质处理后热时效模拟方法,用原子探针层析成像技术研究了核反应堆压力容器模拟钢中富铜纳米团簇的析出过程.模拟钢经880℃加热水淬,660℃高温回火调质处理,并经400℃时效处理1000 h后基体中析出了富铜纳米团簇.使用MSEM(maximum separation envelope method)方法重点研究了富铜纳米团簇在析出早期阶段成分变化规律.结果表明,富铜纳米团簇容易在镍含量较高的位置形核,并随着富铜纳米团簇中铜原子聚集程度的增加,纳米团簇中心处铜含量逐渐增加,镍含量逐渐减少;在纳米团簇与α--Fe基体界面处,镍和锰含量逐渐增加,形成了富镍和富锰包裹富铜纳米团簇的结构.结合实验结果讨论了压力容器钢中合金元素镍及杂质元素磷会增加中子辐照脆化敏感性的原因.     

电脉冲处理对热镀锌镀层生长动力学影响

采用正交试验的方法,研究了电脉冲处理对热镀锌镀层生长动力学的影响.以合金层生长速率时间指数为评价指标对电脉冲处理效果进行了优化.正交试验结果表明,电脉冲处理参数中电容量是主要影响因素,处理时间影响不明显,在电容量200μF,电压700 V,频率2 Hz,处理时间30 s的条件下作用效果较好.在此参数条件下的热镀锌实验结果表明:合金层的生长受到抑制,厚度减薄,组织变得均匀致密;合金层生长速率时间指数由0.717下降到0.428,合金层的生长方式由界面反应和扩散联合控制转变为仅受扩散控制.     

氧分压对IWO薄膜表面形貌及光电性能的影响

掺钨氧化铟(In2O3:W,IWO)薄膜是一种新型的透明导电氧化物(TCO)薄膜,其中W与In之间存在着较高的价态差,使得IWO薄膜与其他TCO薄膜相比,在相同的电阻率条件下具有载流子浓度低、迁移率高和近红外区透射率高的特点.利用直流磁控溅射法制备了IWO薄膜,利用X射线衍射、扫描电子显微镜、霍尔效应及分光光度计表征了薄膜的表面形貌及光电性能.在工作压力1 Pa、氧分压为2.4×10-1Pa的条件下,实验中制备的IWO薄膜最佳电阻率为6.3×10-4Ω.cm,最高载流子迁移率为34 cm2V-1s-1,载流子浓度达到2.9×1020cm-3,可见光平均透射率约为85%,近红外平均透射率大于80%.     

基于压力修正方法的高温气冷堆模拟

高温气冷堆热工水力过程模拟是高温气冷堆模拟机开发的关键技术之一,采用流体网络建立流动过程计算模型,将压力修正方法应用到流体网络求解中,传热网络建立传热过程计算模型,并实现流体网络与传热网络的耦合计算,建立了适用于高温气冷堆模拟机的热工水力过程模拟方法,采用组件搭建的方式模拟热工水力过程。将模拟方法应用到带有分支汇合的管路和中间换热器的热工水力过程模拟中,结果表明:压力修正方法的应用使得流体网络具有良好的收敛性,稳态工况计算结果具有良好的稳态精度,动态过程计算能够正确响应热工水力过程的特点,模拟结果与理论分析一致。     

Effects of the flow rate of hydrogen on the growth of graphene

Graphene samples with different morphologies were fabricated on the inside of copper enclosures by low pressure chemical vapor deposition and tuning the flow rate of hydrogen. It is found that the flow rate of hydrogen greatly influences the growth of graphene. Thermodynamic analysis indicates that a higher flow rate of hydrogen is favorable to the formation of good quality graphene with regular morphology. However, the mass-transfer process of methane dominates the growth driving force. At very low pressure, mass-transfer proceeds by Knudsen diffusion, and the mass-transfer flux of methane decreases as the flow rate of hydrogen increases, leading to a decrease in the growth driving force. At a higher pressure, mass-transfer proceeds by Fick's diffusion, and the mass-transfer flux of methane is dominated by the gas velocity, whose variation determines the growth driving force variation of graphene.     

旋转液膜反应器高度对临界流量影响的研究

提出了一种计算临界流量（CVFR）的数值方法,它基于计算流体力学和Navier-Stokes（N-S）方程,依据旋流数选取湍流模型,使模型的选取规范化;同时引入可攀爬壁面函数来提高边界处流体速度的计算精度,并采用自适应时间步长以及网格自适应方法对反应器临界流量进行数值求解,进一步提升计算准确度。通过对不同转速、高度、夹缝宽度及倾角的临界流量数值研究发现,计算结果与实验结果一致性较好,验证了算法有一定的可靠性。在此基础上进一步研究了临界流量与反应器高度的关系,并分析了临界流量对反应器高度和速度的偏弹性。     

Transient pressure analysis for the reactor core and containment of a HTGR after a primary loop pressure boundary break accident

The pressure variances in the reactor core and containment of a High Temperature Gas-cooled Reactor (HTGR) after a primary loop pressure boundary break accident determine the structural integrity and safety of the reactor. Based on mass conservation, energy conservation and state equations, explicit formulae for the transient pressure and temperature variances in the pressure vessels were deduced, and a set of differential equations for the transient pressure and temperature variances in the containment were developed. Numerical simulation was also conducted to investigate the transient pressure and temperature variances in the pressure vessels and containment. The results show that energy transformation due to expansion work cannot be neglected. The maximum pressure in the containment could increase by 40 percent due to blockage caused by air in the containment. Detailed numerical simulations of the transient pressure and temperature variance in the reactor core flow passages were also conducted. The results show that the pressures acting on the reactor core and containment are below acceptable values.     

Fabrication and photoluminescence of GaN nanowires prepared by ammoniating Ga_2O_3/BN films on Si substrate

GaN has been considered to be the most promising optoelectronic material for such applications as light emitting diodes (LEDs), laser diodes (LDs) as well as high power electronic devices, due to its large direct energy band gap of 3.39 eV at room tempera…