表面活性剂Bi对自旋阀多层膜交换耦合场的影响及其微结构分析

采用磁控溅射方法制备了Ta(10nm)/NiFe(8nm)/Cu(2.6nm)/NiFe(3.6nm)/FeMn(9nm)/Ta(10nm)自旋阀多层膜.在Cu/NiFe界面沉积适量厚度的Bi原子能够有效地提高交换耦合场,沉积过量的Bi原子会导致交换耦合场下降.X射线光电子能谱分析结果表明:沉积在Cu/NiFe界面的Bi原子可以有效地抑制Cu原子在NiFe层表面的偏聚;当沉积过量的Bi原子时,Bi原子会进一步迁移到FeMn中,形成杂质,从而破坏了FeMn的反铁磁性,使交换耦合场降低.     

The influence of the nonmagnetic metal spacer Bi, Ag and Cu on the properties of the multilayer films

When a ferromagnetic (FM)/antiferromagnetic (AFM) bilayer is field-cooled below the Neel temperature (TN) of the AF layer, a unidirectional anisotropy is induced in the FM. Exchange bias is one of the phenomena as- sociated with the exchange anisotorpy cr…     

不同缓冲层对Ni_(81)Fe_(19)薄膜性能影响和微结构分析

采用磁控溅射方法制备分别以Ta和NiFeCr为缓冲层的Ta(NiFeCr)/NiFe/Ta薄膜材料.对于相同厚度的NiFe薄膜,与传统材料Ta相比,用NiFeCr作缓冲层薄膜的各向异性磁电阻有显著的提高.X射线衍射结果表明,与Ta缓冲层相比NiFeCr缓冲层可以诱导更强的NiFe(111)织构.高分辨透射电子显微镜结果表明,NiFeCr缓冲层和NiFe层的晶格匹配非常好,NiFe沿着NiFeCr外延生长,以NiFeCr为缓冲层的NiFe薄膜具有良好的晶体结构.对薄膜进行热处理,以NiFeCr缓冲层为缓冲薄膜的各向异性磁电阻值在350℃以下基本保持不变,当退火温度超过350℃后,其值会明显下降.以NiFeCr缓冲层的薄膜在350℃以下退火具有良好的热稳定性.     

巨磁电阻自旋阀多层膜的结构和磁性

用磁控溅射镀膜方法，制成了巨磁电阻自旋阀多层膜Ｔａ／ＮｉＦｅ／Ｃｕ／ＮｉＦｅ／ＦｅＭｎ／Ｔａ。它具有优良的特性。其室温磁电阻比率ＭＲ〉２％，自由层矫元力Ｈｃｌ〈１６０Ａ／ｍ，自由层零磁场漂Ｈｆ〈８００Ａ／ｍ和钉 扎层交换场Ｈｅｘ≈２０×１０＾３Ａ／Ｍ。     

Magnetic property and interface structure of Ta/NiO/NiFe/Ta

Ta/NiO/NiFe/Ta multilayers, utilizing Ta as buffer layer, were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field between NiO and NiFe reached a maximum value of 9.6×10³ A/m at a NiO film thickness of 50 nm. The composition and chemical states at interface region of Ta/NiO/Ta were studied by using the X-ray photoelectron spectroscopy (XPS) and peak decomp- osition technique. The results show that there is an “inter- mixing layer” at the Ta/NiO (and NiO/Ta) interface due to a thermodynamically favorable reaction 2Ta + 5NiO = 5Ni + Ta₂O₅. This interface reaction has a great effect on exchange coupling. The thickness of Ni+NiO estimated by XPS depth- profiles is about 8—10 nm.     

NiO钉扎的自旋阀的结构和磁性

利用反应溅射的方法制备了ＮｉＯ薄膜,并研究了ＮｉＯ对ＮｉＦｅ薄膜的钉扎作用结果表明钉扎场与反应溅射的Ａｒ／Ｏ２比例,总的溅射气压、基底的粗糙度等有很大关系,利用光电子能谱（ＸＰＳ）分析了ＮｉＯ２中的Ｎｉ２Ｏ离子的价态,并制备了ＮｉＯ钉扎的自旋阀Ｔａ／ＮｉＯ／ＮｉＦｅ／Ｃｕ／ＮｉＦｅ／Ｔａ,其磁电阻（ＭＲ）可达到２．２％,忆场为１０．４８ｋＡ／ｍ。     

磁性多层膜Ta/NiO/NiFe/Ta角分辨XPS

磁性多层膜Ta/NiO/NiFe/Ta由磁控溅射方法制备.采用角分辨X射线光电子能谱(XPS)研究了反铁磁(NiO)/铁磁(NiFe)界面.结果表明,在NiO/NiFe界面发生了化学反应: NiO+Fe = Ni+FeO和3NiO+2Fe =3Ni+Fe2O3,此反应深度约为1～1.5 nm.反应产物将影响NiO对NiFe的交换耦合.     

Dependence of Magnetic Properties and Microstructure of Ni81Fe19 Film on Base Vacuum and Sputtering Pressure

The Ni81Fe19 / Ta films with different NiFe thickness were prepared at different base vacuums and sputtering pressures. The results of magnetic measurement and atomic force microscope (AFM) showed that the films prepared at higher base vacuum and lower sputtering pressure had larger R/R. The reason should be that higher base vacuum and lower sputtering pressure introduce larger grain-size and lower surface roughness, which will weaken the scattering of electrons, reduce the resistance R, and increase R/R.     

Cr缓冲层对SmCo/Cu薄膜结构及形貌的影响

研究了不同厚度SmCo薄膜的结构以及Cr缓冲层对SmCo/Cu薄膜结构、形貌及性能的影响.结果表明,对于较厚的SmCo薄膜,延长退火时间可有效提高样品的结晶度;Cr缓冲层能够提高样品表面的平整度,降低SmCo平均晶粒尺寸,增强SmCo（002）衍射峰与Cu（111）衍射峰强度之比（R）,从而提高样品的磁性能.同时发现,SmCo/Cu薄膜的磁性能可以通过调节Cr缓冲层厚度进一步得到优化,其中通过调控缓冲层厚度提高R值,形成Cu（111）与SmCo（002）织构,是提高SmCo5/Cu薄膜磁性的关键所在.     

NiO靶烧结温度对NiO/Ni81Fe19双层膜的影响

在不同的温度下烧结制备 Ni O靶 ,用射频磁控溅射法淀积 Ni O/ Ni81 Fe1 9双层膜 ,研究了不同的温度烧结 Ni O靶对 Ni O/ Ni Fe双层膜特性的影响 ,结果表明 ,使用不同的烧结温度制备的 Ni O靶溅射所得的 Ni O膜中 Ni的化学价态及其含量不同 ,进而影响 Ni O/ Ni81 Fe1 9双层膜的磁滞回线的矩形度及层间交换耦合作用     

NiMn薄膜的无序有序转变

研究了Si/Ta/NiMn/Al和Si/Ta/NiFe/NiMn/Al多层膜中NiMn薄膜经300 oC 5 h不同次数循环退火后的有序化情况.X射线衍射定量计算结果表明,高温循环退火能极大地促进NiMn薄膜的有序化.NiMn薄膜中有序相的含量随退火循环数的增加而持续增加.但含NiFe层的膜有序化过程要比无NiFe层时缓慢.显然,NiFe对NiMn的有序化有阻碍作用.     

缓冲层对NiCo薄膜各向异性磁致电阻的影响

用磁控溅射法制备了以NiFeCr和Ta分别为缓冲层的两种NiCo薄膜样品,在不同温度下对两种样品退火.结果表明:在NiCo厚度相同的情况下,以NiFeCr作为缓冲层的样品的各向异性磁致电阻(AMR)值明显高于Ta作为缓冲层的样品.X射线衍射(XRD)的结果表明,NiFeCr/NiCo薄膜的晶粒平均尺寸大于Ta/NiCo薄膜,且两种样品的磁膜/缓冲层界面存在较大差异,这可能是造成两者AMR差异的原因.此外,对样品进行温度适当的热处理可以明显改善薄膜的物理性质.     

Chemical states of the atoms in magnetic multilayersTa/NiOx/Ni81Fe19/Ta and Co/AlOx/Co

Ta/NiOx/Ni81Fe19/Ta and Co/AiOx/Co multilayers were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field (Hex) and the coercivity (Hc)of NiOx/Ni81Fe19 as a function of the ratio of Ar to O2 during the deposition process were studied. The composition and chemical states at the interface region of NiOx/NiFe were also investigated using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that when the ratio of Ar to O2 is equal to 7 and the argon sputtering pressure is 0.57 Pa, the x value is approximately 1and the valence of nickel is +2. At this point, NiOx is antiferromagnetic NiO and the corresponding Hex is the largest.As the ratio of Ar/O2 deviates from 7, the Hex will decrease due to the presence of magnetic impurities such as Ni+3 or metallic Ni at the interface region of NiOx /NiFe, while the Hc will increase due to the metallic Ni. Al layers in Co/AIOx/Co multilayers were also studied by angle-resolved XPS. Our finding is that the bottom Co could be completely covered by depositing an Al layer about 1.8 nm. The thickness of AIOx was 1.2 nm.     

SiO2/Ta interface reaction in magnetic multilayers and its influence on Ta buffer layers

Ta is often used as a buffer layer in magnetic multilayers. In this study, Ta/Ni81Fe19/Ta multilayers were deposited by magnetron sputtering on sing-crystal Si with a 300-nm-thick SiO2 film. The composition and chemical states at the interface region of SiO2/Ta were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an "intermixing layer" at the SiO2/Ta interface due to a thermodynamically favorable reaction: 15 SiO2 + 37 Ta = 6 Ta2O5 + 5 Ta5Si3. Therefore, the Ta buffer layer thickness used to induce NiFe (111) texture increases.     

Magnetoresistive behavior and magnetization reversal of NiFe/Cu/CoFe/IrMn spin valve GMRs in nanoscale

The magnetoresistance behavior and the magnetization reversal mode of NiFe/Cu/CoFe/IrMn spin valve giant magnetoresistance (SV-GMR) in nanoscale were investigated experimentally and theoretically by nanosized magnetic simulation methods. Based on the Landau-Lifshitz-Gilbert equation, a model with a special gridding was proposed to calculate the giant magnetoresistance ratio (MR) and investigate the magnetization reversal mode. The relationship between MR and the external magnetic field was obtained and analyzed. Studies into the variation of the magnetization distribution reveal that the magnetization reversal mode, that is, the jump variation mode for NiFe/Cu/CoFe/IrMn, depends greatly on the antiferromagnetic coupling behavior between the pinned layer and the antiferromagnetic layer. It is also found that the switching field is almost linear with the exchange coefficient.     

Effects of Fe content on the microstructure and properties of CuNi10FeMn1 alloy tubes fabricated by HCCM horizontal continuous casting

Heating-cooling combined mold (HCCM) horizontal continuous casting technology developed by our research group was used to produce high axial columnar-grained CuNi10FeMn1 alloy tubes with different Fe contents. The effects of Fe content (1.08wt%–2.01wt%) on the microstructure, segregation, and flushing corrosion resistance in simulated flowing seawater as well as the mechanical properties of the alloy tubes were investigated. The results show that when the Fe content is increased from 1.08wt% to 2.01wt%, the segregation degree of Ni and Fe elements increases, and the segregation coefficient of Ni and Fe elements falls from 0.92 to 0.70 and from 0.92 to 0.63, respectively. With increasing Fe content, the corrosion rate of the alloy decreases initially and then increases. When the Fe content is 1.83wt%, the corrosion rate approaches the minimum and dense, less-defect corrosion films, which contain rich Ni and Fe elements, form on the surface of the alloy; these films effectively protect the α-matrix and reduce the corrosion rate. When the Fe content is increased from 1.08wt% to 2.01wt%, the tensile strength of the alloy tube increases from 204 MPa to 236 MPa, while the elongation to failure changes slightly about 46%, indicating the excellent workability of the CuNi10FeMn1 alloy tubes.     

全化学溶液法制备SrTiO3缓冲层

 化学法制备SrTiO₃薄膜成本低、效率高,适合用于YBa₂Cu₃O_7-δ（YBCO）涂层导体的缓冲层。采用全化学溶液沉积法在Ni-5W金属基带上外延生长了SrTiO₃（STO）缓冲层薄膜。以乙酸盐、钛酸丁酯为原料配制均匀稳定的STO种子层、La_xSr_1-xTiO₃种子层和STO 缓冲层前驱溶液。研究了STO 种子层薄膜厚度对在STO/Ni-5W（200）上沉积STO 外延薄膜性能的影响,结果表明,在880℃烧结温度下制备的3 层STO 种子层上可以制备出表面光滑平整、具有（200）择优取向的STO 缓冲层。尝试将La 元素掺入STO 中制得稳定的LSTO 前驱液,在LSTO/Ni-5W 结构上制备了具有（200）择优取向的STO 缓冲层薄膜,可作为YBa₂Cu₃O_7-δ涂层导体的缓冲层。     

具有优良绝缘性能的Ta2O5介质膜

介绍了一种具有优良绝缘性能的Ｔａ２Ｏ５介质膜,它由溅射／阳极氧化二步法工艺制备而成。用原子力显微镜对Ｔａ２Ｏ５膜进行了表面形貌分析,对它的电特性进行了测试,并与溅射Ｔａ２Ｏ５膜和阳极氧化Ｔａ２Ｏ５膜进行了比较。结果表明,溅射／阳极氧化Ｔａ２Ｏ５膜的漏电流比溅ＴＭＤＦＡ２Ｏ５膜和阳极氧化Ｔａ２Ｏ５膜分别减少了３－４和１－２个数量级,击穿场强也远高于后２种膜。     

低饱和场巨磁电阻金属多层膜Ni80Fe20／Cu的结构与磁电阻

采用磁控溅射方法，获得了具有低饱和场巨磁电阻的Ｎｉ８０Ｆｅ２０／Ｃｕ金属多层膜，在室温下，其磁电阻和层间耦合状态随Ｃｕ层厚度的增加呈振荡变化，在Ｃｕ层厚度ｔＣｕ＝１．０ｎｍ，２．２ｎｍ时磁电阻出现２个峰值分别为１９．４％和１１．７％，饱和场约为６．４×１０＾４Ａ／ｍ和８×１０＾３Ａ／ｍ低温下（７７Ｋ）磁电阻为３３．２％和２７．６％，系统地研究了ＮｉＦｅ层厚度和周期数对多层膜磁电阻的影响，用真空退火     

(Ni_(0.79)Fe_(0.21))_(1-x)Nb_x种子层对Ni_(0.79)Fe_(0.21)合金磁电阻的影响

采用磁控溅射的方法, 在诱导磁场下制备了[(Ni0 79Fe0 21)1-xNbx]/NiFe/Ta 系列膜, 测量了种子层中Nb原子的百分含量、膜的微结构和膜的MR( Magnetoresistance), 研究了种子层的厚度和种子层中Nb原子的百分含量对NiFe的MR的影响. 实验表明: 以NiFeNb为种子层可较明显的改善Ni0 79Fe0 21膜的微结构, 提高其磁电阻性能.