射频功率对射频磁控反应溅射制备AlN薄膜的影响

采用射频磁控溅射法在Si(100)衬底上制备了AlN薄膜,通过控制工艺参数可以沉积出不同择优取向的AlN薄膜,各工艺参数中射频功率对其择优取向的影响最大.XRD表征了AlN薄膜的结构,进而选择出最优射频功率.     

Texture of the nano-crystalline AlN thin films and the growth conditions in DC magnetron sputtering

DC reactive magnetron sputtering technique has been used for the preparation of Al N thin fi lms. The deposition temperature and the fl ow ratio of N2/Ar were varied and subsequent dependency of the fi lms crystallites orientation/texture has been addressed. In general, deposited fi lms were found hexagonal polycrystalline with a(002) preferred orientation. The X-ray diffraction(XRD) data revealed that the fi lm crystallinity improves,with the increase of substrate temperature from 300 ℃to 500℃. The dropped in full width half maximum(FWHM) of the XRD rocking curve value further con fi rmed it. However, increasing substrate temperature above 500 ℃or reducing the nitrogen condition(from 60 to 30% in the environment) induced the growth of crystallites with(102) and(103) orientations. The rise of rocking curve FWHM for the corresponding conditions depicted that the fi lms texture quality deteriorated. A further con fi rmation of the variation in fi lm texture/orentation with the growth conditions has been obtained from the variation in FWHM values of a dominant E1(TO) mode in the Fourier transform infrared(FTIR) spectra and the E2(high) mode in Raman spectra. We have correlated the columnar structure in AFM surface analyses with the(002) or c-axis orientation as well. Spectroscopic ellipsometry of the samples have shown a higher refractive index at 500 ℃growth temperature.     

沉积工艺参数对AlN薄膜择优取向影响的实验研究

采用射频磁控溅射法,以高纯Al（99．999％）为靶材,高纯N2为反应气体,在硅及金刚石上制备了氮化铝（AIN）薄膜．研究了氩气氮气比例、溅射气压等工艺参数对A1N膜沉积的影响规律．结果表明,随着氮气比例的增大A1N（002）取向明显增强．溅射气压低有利于以AIN（002）面择优取向．     

衬底温度对ZnO薄膜的结构和发光性能的影响

目的 研究衬底温度对znO薄膜结构和发光性能的影响及薄膜结构与发光性能两者之间的关系.方法 在玻璃衬底上采用射频磁控溅射法,固定其他工艺参数、改变衬底温度制备znO薄膜.对薄膜进行XRD谱和室温光致发光(PL)谱研究.结果 衬底温度在25℃到250℃之间,随着温度的升高,结晶质量变好,且紫外发光相对明显增强.在衬底温度为250℃时,结晶质量和发光性能均达到最优化.继续升高衬底温度,结晶质量和发光性能都下降.结论 衬底温度对ZnO薄膜的制备有着重要的影响;薄膜发光性能与结晶质量密切相关,结晶质量越好,紫外发先相对强度越大.     

工艺参数对碳纳米管定向薄膜生长的影响

为了生长出高质量的定向碳纳米管薄膜 ,研究了反应时间、反应温度等工艺参数对薄膜生长的影响。试验采用二甲苯为碳源 ,二茂铁为催化剂 ,在石英基底上催化裂解生长碳纳米管定向薄膜。通过扫描电子显微镜 (SEM)和透射电子显微镜 (TEM)观察表明 ,得到的薄膜是由定向性良好的多壁碳纳米管 (MWNTs)组成 ,管径为 2 0～ 5 0 nm。反应时间对定向生长的碳纳米管长度有决定性影响 ;随反应时间的增长 ,定向性更好。同时 ,较适合碳纳米管薄膜定向生长的反应温度区间为 10 5 3～ 1113K。而反应温度和反应时间对薄膜中碳纳米管的直径无明显影响。     

偏压对TiN薄膜和Ag-TiN复合膜力学性能的影响

利用射频磁控溅射技术,使用TiN化合物靶,以不锈钢为基底在不同负偏压下沉积TiN薄膜,并通过共溅射获得掺Ag的Ag-TiN复合膜.分别利用XRD、纳米压痕仪、扫描电子显微镜(SEM)和光学接触角测量仪等对样品的晶体结构、硬度、微观形貌和水接触角进行测试.结果表明:在较低负偏压下获得的薄膜为Ti_2N,表现为四方相;在较高负偏压下沉积的薄膜为立方相TiN,呈现(111)择优取向,薄膜表面呈三角棱椎形貌,薄膜硬度明显提高;Ag-TiN复合膜中的Ag元素以单质多晶的形式存在.当偏压为-130V时,TiN薄膜(111)衍射峰十分强烈,此时硬度和弹性模量最高,分别达到36.0GPa和426.937GPa.偏压为-100V时,TiN薄膜接触角最低,表现为疏水性,与TiN薄膜相比,Ag-TiN复合膜的水接触角降低明显,掺杂Ag后的Ag-TiN复合膜转变为亲水性.     

MoS2单晶薄膜的制备及生长机制研究

通过研究二维MoS₂薄膜的制备工艺参数以及生长规律,为过渡金属硫化物薄膜的制备工艺提供技术经验。采用化学气相沉积法,以MoO₃和S粉为前驱体,通过调控载气流速、保温时间和MoO₃的质量,制备一系列MoS₂薄膜。利用光学显微镜、拉曼光谱仪、光致发光光谱仪、原子力显微镜等测试设备对MoS₂薄膜的层数和结构进行表征;分析了工艺参数对MoS₂薄膜的影响,探索了中心成核的生长机制。结果表明,在载气流速为110 mL/min、保温时间为10 min、MoO₃的质量为2.5 mg的条件下,得到的MoS₂薄膜最优。同一衬底上存在不同厚度的连续的MoS₂薄膜。通过控制前驱体的比例和适当的工艺参数可以制备长度为100 μm甚至更大尺寸的单层MoS₂薄膜。     

衬底温度对钛镁掺杂氧化锌薄膜光学性能的影响

以石英玻璃作为衬底,采用射频磁控溅射技术沉积钛镁掺杂氧化锌(TMZO)薄膜样品.基于分光光度计测量的透射光谱数据,利用光学表征方法确定了薄膜样品的折射率、消光系数和光学能隙等光学参数,研究了衬底温度对TMZO样品光学性能的影响.结果表明,可见光区域所有薄膜的折射率均随波长增加而单调减小,表现为正常的色散关系,衬底温度对薄膜样品的透光性和光学参数具有明显的影响.衬底温度升高时,TMZO样品的可见光区平均透过率和光学能隙均呈现出先增后减的变化趋势,当衬底温度为300°C时,它们都具有最大值.     

衬底温度对ZnO：Al薄膜结构和光透过性能的影响

利用超声喷雾热解方法以不同的沉积温度（450～530℃）在石英衬底上制备出具备较高光学质量的ZnO：Al（AZO）薄膜.通过X射线衍射谱（XRD）研究了薄膜的结构,用扫描电子显微镜（SEM）研究了薄膜的表面形貌,用紫外可见（UV）分光光度计对薄膜的光透过特性进行了测试分析.结果表明：所制备薄膜在可见波段具有较高透过率,并且沉积温度对AZO薄膜的结构和光透过性能有很大影响.在衬底温度为470℃时得到的AZO薄膜具有（002）择优取向,结晶质量最好、光透过率最高,在可见光区平均透过率达到85%以上.     

灯丝平面与衬底间距对金刚石膜沉积的影响

采用电子辅助热灯丝化学气相沉积(EA-CVD)方法沉积大面积金刚石膜,在金刚石膜的沉积过程中,灯丝平面与衬底间距对金刚石膜沉积的影响会直接影响着金刚石膜的生长和质量.用Raman手段对金刚石膜的生长特性进行了表征.     

灯丝平面与衬底间距对金刚石膜沉积的影响

采用电子辅助热灯丝化学气相沉积(EA-CVD)方法沉积大面积金刚石膜,在金刚石膜的沉积过程中,灯丝平面与衬底间距对金刚石膜沉积的影响会直接影响着金刚石膜的生长和质量。用Raman手段对金刚石膜的生长特性进行了表征。     

HFCVD法制备SiC薄膜工艺

分析研究了热丝化学汽相沉积（HFCVD）法工艺参数的变化对SiC薄膜质量的影响。结果表明，合理的选取工艺参数，可在较低温度（700－900℃）晶向异质生长出高质量的准晶SiC薄膜。     

衬底温度对InxGa1-xN薄膜结构特性的影响

本文采用MOCVD工艺,通过调整衬底温度(固定其它工艺参数)来沉积用于太阳电池的InxGa1-xN薄膜,并利用X射线衍射仪(XRD)、X射线荧光光谱仪(XRF)、扫描电子显微镜(SEM)和台阶仪来分析研究其结构特性.衬底温度较低时有利于薄膜的In注入,衬底温度较高时有利于沉积高结晶质量的InxGa1-xN薄膜.当衬底温度为470℃时,在硅衬底上所沉积的InxGa1-xN薄膜In含量较高,为46.92%;薄膜表面光滑致密,粗糙度小;颗粒较大,且颗粒大小均匀.     

基体偏压对磁控溅射TiAlN薄膜性能的影响

采用中频孪生磁控溅射技术,以Q235碳钢为基体,通过调整薄膜沉积过程中基体负偏压大小,制备TiAlN薄膜.采用原子力显微镜(AFM)观察薄膜表面形貌,采用动电位极化试验研究薄膜的电化学腐蚀行为,用台阶仪和显微硬度计测量薄膜的厚度和硬度,用X-射线光电子能谱仪测试薄膜的组织成分.结果表明,TiAlN薄膜表面平整,粗糙度低.随偏压的增大,膜厚、显微硬度和耐腐蚀性都呈现也先增大,后减小的趋势.当负偏压增大到60 V时,薄膜的腐蚀电位和腐蚀电流密度分别为-256.2 mV和7.81×10-6A/cm2,抗腐蚀能力最强.X射线光电子能谱(XPS)检测结果表明,随负偏压幅的增大,Al/Ti原子比降低.     

Influence of growth conditions on the electrochemical synthesis of SnS thin films and their optical properties

Tin sulfide (SnS) thin films were prepared by electrodeposition onto fluorine-doped tin oxide (FTO) glass substrates using an aqueous solution containing SnCl₂ and Na₂S₂O₃ at various deposition potentials (E) and bath concentrations. The pH value and temperature of the solution were kept constant. The deposited films were characterized using X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), photoluminescence (PL), and ultraviolet–visible (UV–Vis) spectroscopy. The FESEM images demonstrated that changes in the deposition potential (E) and solution concentration led to marked changes in the morphology of the deposited SnS films. Energy-dispersive X-ray analysis (EDXA) results showed that the Sn/S atomic ratio strongly depended on both the solution concentration and the deposition potential. To obtain an Sn/S atomic ratio approximately equal to 1, the optimal Sn2+/S₂O₃2- molar ratio and E parameter were 1/8 and -1.0 V, respectively. The XRD patterns showed that the synthesized SnS was obviously polycrystalline, with an orthorhombic structure. The effects of the variations of bath concentration and deposition potential on the band-gap energy (E_g) were studied using PL and UV–Vis experiments. The PL spectra of all the SnS films contained two peaks in the visible region and one peak in the infrared (IR) region. The UV–Vis spectra showed that the optical band-gap energy varies from 1.21 to 1.44 eV.     

氩单原子嵌入晶体过程的分子动力学模拟

采用分子动力学模拟技术研究氩单原子嵌入基体时发生的变形过程，揭示了基体温度、嵌入速度对界面法向力、材料变形行为的影响。模拟结果表明L－J固体中位错运动的方向与宏观塑性流动相一致，压缩屈服强度随着基体温度的增加和嵌入速度的减小而降低。     

镁合金表面制备硅掺杂类金刚石膜的性能研究

将无铬化学转化新工艺与射频等离子化学气相沉积（PECVD）技术相结合,先在镁合金表面生成一层多孔结构、附着力高的化学转化膜作为过渡层,再采用PECVD技术低温沉积一层硅掺杂类金刚石（Si-DLC）薄膜复合涂层。扫描电子显微镜和拉曼光谱图分析证实,获得的薄膜由sp2和sp3键杂化的碳硅氢化合物呈层状堆积而成,薄膜均匀、平整致密;制备的薄膜为典型的类金刚石结构。原子力显微镜直观地观察到,掺杂硅的类金刚石薄膜比未掺杂的平整致密。当硅含量达到20%时,得到的DLC薄膜最为平整致密,无铬化学转化膜层均被含硅的DLC薄膜覆盖。性能测试实验表明,将化学转化膜作为中间过渡层并采用PECVD沉积含硅的DLC薄膜明显提高了镁合金基体与其的结合强度,同时也大幅度提高了镁合金的耐磨、耐高温和耐蚀性。     

Preparation and characterization of nano-crystalline diamond films on glass substrate

Adherent nano diamond films were successfully deposited on glass substrate by microwave plasma assisted CVD method in H₂-CH₄ and Ar-CH₄ environment. Raman, AFM (Atomic Force Microscope), TEM (Transmission Electron Microscope), FTIR,and Nano Indentation techniques were used for characterization of the obtained nano diamond films. It was found that the average grain size was less than 100 nm with a surface roughness value as low as 2 nm. The nano diamond films were found to have excellent transparency in visible and IR spectrum range, and were as hard as natural diamond. Experimental results were presented.Mechanisms for nano diamond film deposition were discussed.     

金属表面膜对金属红外激光加热吸收的影响的研究

从金属的热传导特性,导出金属受CO_2红外激光辐照时,金属的温度与吸收率的关系。给出用微处理机控制自动曝光和采样,测量几种国产金属材料具有不同表面膜时的吸收率,以研究表面膜对加热吸收的影响。