Effects of AlN on the densification and mechanical properties of pressureless-sintered SiC ceramics

In the present work, Si C ceramics was fabricated with Al N using B_4 C and C as sintering aids by a solid-state pressureless-sintered method. The effects of Al N contents on the densification, mechanical properties, phase compositions, and microstructure evolutions of as-obtained Si C ceramics were thoroughly investigated. Al N was found to promote further densification of the Si C ceramics due to its evaporation over 1800 °C,transportation, and solidification in the pores resulted from Si C grain coarsening. The highest relative density of 99.65% was achieved for Si C sample with 15.0 wt% Al N by the pressureless-sintered method at 2130 °C for 1 h in Ar atmosphere. Furthermore, the fracture mechanism for Si C ceramics containing Al N tended to transfer from single transgranular fracture mode to both transgranular fracture and intergranular fracture modes when the sample with 30.0 wt% Al N sintered at 1900 °C for 1 h in Ar. Also, Si C ceramics with 30.0 wt% Al N exhibited the highest fracture toughness of 5.23 MPa m~(1/2) when sintered at 1900 °C.     

Dielectric properties of porous SiC/Si_3N_4 ceramics by polysilazane immersion-pyrolysis

The SiC nanotubes were synthesized on porous Si_3N_4 matrix by polysilazane immersion-pyrolysis. The β-SiC and free C contents increased with the increasing dipping times, which cause some clear vibration and loss peaks of the dielectric constant patterns emerged at around 12.9 GHz and 14.7 GHz in the samples of 20 wt% and 30 wt%benzoic acid, respectively. The reflectivity of the obtained ceramics were -7 dB ～-10 dB from the frequency of 8 GHz–18 GHz, which means that the amount of 80%–90% electromagnetic wave could be attenuated. The ceramics containing 40 wt% benzoic acid showed the high loss, low reflectivity and a wide absorbing band,indicating the high absorbing efficiency and good dielectric properties.     

Optimum sintering conditions for optical properties of translucent aluminum nitride ceramics

High translucency is one of the excellent properties of AlN ceramics because of its wide optical band gap energy of 6.2 eV. We have achieved success in producing AlN ceramic tube of 98% total visible light transmittance at 0.6 mm thick tube wall by applying an improved sintering technique. This AlN ceramic was produced by sintering at 1880℃ using Ca3Al2O6 as a sintering additive and in reduction atmosphere to remove the sintering additive from the final sintered material. After the sintering, the annealing ...     

Effect of CuO addition on the sintering temperature and microwave dielectric properties of CaSiO3– Al2O3 ceramics

CuO-doped CaSiO3–1 wt% Al2O3 ceramics were synthesized via a traditional solid-state reaction method, and their sintering behavior,microstructure and microwave dielectric properties were investigated. The results showed that appropriate CuO addition could accelerate the sintering process and assist the densification of CaSiO3–1 wt% Al2O3 ceramics, which could effectively lower the densification temperature from1250 1C to 1050 1C. However, the addition of CuO undermined the microwave dielectric properties. The optimal amount of CuO addition was found to be 0.8 wt%, and the derived CaSiO3–Al2O3ceramic sintered at 1100 1C presented good microwave dielectric properties of εr?7.27,Q f?16,850 GHz and τf? 39.53 ppm/1C, which is much better than those of pure CaSiO3 ceramic sintered at 1340oC(Q f?13,109 GHz).The chemical compatibility of the above ceramic with 30 Pd/70 Ag during the cofiring process has also been investigated, and the result showed that there was no chemical reaction between palladium–silver alloys and ceramics.& 2014 Chinese Materials Research Society. Production and hosting by Elsevier B.V. All rights reserved.     

Effect of SiO2 addition on the dielectric properties and microstructure of BaTiO3-based ceramics in reducing sintering

The effect of SiO₂ doping on the sintering behavior, microstructure, and dielectric properties of BaTiO₃-based ceramics has been investigated. Silica was added to the BaTiO₃-based powder prepared by the solid state method with 0.075mol%, 0.15mol%, and 0.3mol%, respectively. The SiO₂-doped BaTiO₃-based ceramic with high density and uniform grain size were obtained, which were sintered in reducing atmosphere. A scanning electron microscope, X-ray diffraction, and LCR meter were used to determine the microstructure as well as the dielectric properties. SiO₂ can form a liquid phase belonging to the ternary system of BaO-TiO₂-SiO₂, leading to the formation of BaTiO₃ ceramics with high density at a lower sintering temperature. The SiO₂-doped BaTiO₃-based ceramics can be sintered to a theoretical density higher than 95% at 1220℃ with a soaking time of 2 h. The dielectric constants of the sample with 0.15mol% SiO₂ addition sintered at 1220℃ is about 9000. Doping with a small amount of silica can improve the sintering and dielectric properties of BaTiO₃-based ceramics.     

Ca(Sm0.5Nb0.5)O3介质陶瓷的微波烧结

通过改变微波烧结温度和保温时间,优化Ca( Sm0.5 Nb0.5) O3 (CSN)陶瓷的微波烧结工艺,用X线衍射仪(XRD)、扫描电镜(SEM)和微波网络分析仪等对试样进行表征.从相组成、显微结构及微波介电性能等方面对微波烧结试样与常规烧结试样进行对比分析.结果表明:微波烧结可大幅降低CSN的烧结温度,促进试样的致密化,其物相组成和传统烧结试样无明显差别;微波烧结还可以改善CSN陶瓷的微波介电性能,在1 375℃微波烧结30 min可获得优异的微波介电性能,介电常数(εr)=20.08,品质因数(Q×f)=37.03 THz,谐振频率温度系数(Tf)=-10.2×10-6℃-1.     

Effect of B2O3 on the aqueous tape casting and microwave properties of Li2O–Nb2O5–TiO2 ceramics

The effect of B2O3 addition on the aqueous tape casting, sintering, microstructure and microwave dielectric properties of Li2O-Nb2O5-TiO2 ceramics has been investigated. The tape casting slurries exhibit a typical shear-thinning behavior without thixotropy, but the addition of B2O3 increases the viscosity of the slurries significantly. It was found that doping of B2O3 can decrease the tensile strength, strain to failure and density of the green tapes. The sintering temperature could be lowed down to 900℃ with the addition of 2 wt% B2O3 due to the liquid phase effect. No secondary phase is observed. The addition of B2O3 does not induce much degradation on the microwave dielectric properties. Optimum microwave dielectric properties of εr 67, Q×f 6560 GHz are obtained for Li2O-Nb2O5-TiO2 ceramics containing 2 wt% B2O3 sintered at 900 1C. It represents that the ceramics could be promising for multilayer low-temperature co-fired ceramics (LTCC) application.     

CaBi4Ti4O15基陶瓷制备与镧掺杂的性能优化

两步法烧结制备一系列CaBi4-xLaxTi4O15（x=0,0．1,0．2,0．3,0．4）（CBLT—X）：以氧化物为前驱体用熔盐法合成片状粉体,然后通过晶体定向技术制备后烧结成陶瓷．通过SEM微观结构表征来确定增加镧掺杂和温度对晶粒生长和织构形成的影响．当镧掺杂（z=0．4）烧结温度在1150℃时,CBLT—X陶瓷在垂直于流延方向上介电常数可提高到570．CBLT—X系列陶瓷的介电常数和介电损耗在垂直于流延的方向的数值都高于平行方向上．控制CBLT—X陶瓷结构化和晶粒生长的机理首次用3D模式进行了讨论．     

烧结参数对（Ba0.6Sr0．4）TiO3-MgO复合陶瓷的影响

采用传统的电子陶瓷工艺制备样品,研究烧结参数（温度和时间）对（Ba0.6Sr04）TiO3-MgO复合陶瓷烧结特性、微观结构及介电性能的影响．结果表明：样品的径向收缩率和表观密度在1550℃达到最大值;不同烧结时间的样品径向收缩率和表观密度在烧结3h达到最大值;达到1550℃时,样品的介电常数达到最大值,同时介电损损耗达到最小值,烧结3h时,样品的介电常数达到最大值,同时介电损损耗达到最小值;在烧结3h时样品的介电可调度最大．     

Preparation of aluminum borate whisker reinforced aluminum phosphate wave-transparent materials

Aluminum borate whisker/aluminum phosphates composites were prepared with normal pressure sintering, It was found that the aluminum borate whisker was effective to suppress the crystallization of aluminum phosphates in the aluminum borate whisker/aluminum phosphates composites and contributed to the improvement of the mechanical properties. After sintered at 1050℃ for 1 h, the flexural strength of the composites with 30 vol% aluminum borate whisker addition reached 215.3 MPa. The dielectric constant and loss tangent of the composites were 4.23 and 0.0024 at 10 GHz.     

Phase modification and dielectric properties of a cullet-paper ash-kaolin clay-based ceramic

Novel ceramics from waste material made of (x) paper ash-(80-x) cullet-20 kaolin clay (10wt% ≤ x ≤ 30wt%) were successfully synthesized using a conventional solid-state reaction technique. Energy-dispersive X-ray analysis confirmed the presence of Si, Ca, Al, and Fe in the waste material for preparing these ceramics. The influence of the cullet content on the phase structures and the dielectric properties of these ceramics were systematically investigated. The impedance spectra were verified in the range from 1 Hz to 10 MHz at room temperature. The phase of the ceramics was found to primarily consist of wollastonite (CaSiO₃), along with minor phases of γ-dicalcium silicate (Ca₂SiO₄) and quartz (SiO₂). The sample with a cullet content of 55wt% possessed the optimum wollastonite structure and exhibited good dielectric properties. An increase of the cullet content beyond 55wt% resulted in a structural change from wollastonite to dicalcium silicate, a decrease in dielectric constant, and an increase in dielectric loss. All experimental results suggested that these novel ceramics from waste are applicable for electronic devices.>     

Microwave sintering of Ca<Subscript>0.6</Subscript>La<Subscript>0.2667</Subscript>TiO<Subscript>3</Subscript> microwave dielectric ceramics

Ca_0.6La_0.2667TiO₃ ceramics were prepared by conventional and microwave sintering techniques and their sinterability, microstructure, and microwave dielectric properties were investigated in detail for comparison. Densified Ca_0.6La_0.2667TiO₃ ceramics were obtained by microwave sintering at 1350°C for 30 min and by conventional sintering at 1450°C for 4 h. An unusual phenomenon was found that some larger grains (grain size range: 8–10 μm) inclined to assemble in one area but some smaller ones (grain size range: 2–4 μm) inclined to gather in another area in the microwave sintered ceramics. The microwave dielectric properties of Ca_0.6La_0.2667TiO₃ ceramics prepared by microwave sintering at 1350°C were as follows: dielectric constant (ɛ _r) = 119.6, quality factor (Qf) = 17858.5 GHz, and temperature coefficient of resonant frequency (τ _f) = 155.5 ppm/°C. In contrast, the microwave dielectric properties of the ceramics prepared by conventional sintering at 1450°C were ɛ _r = 117.4, Qf = 13375 GHz, and τ _f = 217.2 ppm/°C.     

Porous SiC ceramics fabricated by quick freeze casting and solid state sintering

Porous SiC ceramics with uniform microstructure were fabricated by quick freezing in liquid nitrogen and solid state sintering.Poly(vinyl alcohol)(PVA) was added as binder and pore morphology controller in this work.The microstructure and mechanical properties of porous SiC ceramics could be controlled by the composition of the aqueous slurries.Both solid content of the slurries and PVA content impacted on the pore structures and mechanical properties of the porous SiC ceramics.The solid content of slurries and PVA content varied from 60 to 67.5 wt%and 2-6 wt%,respectively.Besides,the grain morphology of ceramics was also tailored by changing the sintering temperature from 2050 to 2150 ℃.Porous SiC ceramics with an average porosity of 42.72%,flexural strength of 59.28 MPa were obtained at 2150 ℃ from 67.5 wt% slurries with 2 wt% PVA.     

Investigation of compaction and sintering behavior of SiC powder after ultra-fine treatment

Silicon carbide ceramics were prepared with SiC powder treated by the fluidized bed opposed jet mill as raw materials, and the effects of the ultra-fine treatment mechanism on the compaction and sintering behavior of SiC ceramics were investigated. The results showed that the compacts had higher density and microstructure homogeneity when the sintering temperature of the compact was decreased; and that the surface microstructure, densification and mechanical properties of the sintered body could be ameliorated obviously.     

准同型相界内KNN-LS-BF无铅压电陶瓷的烧结与压电性能

采用传统的陶瓷工艺制备成分处于准同型相界(MPB)内的无铅压电陶瓷0.956K0.5Na0.5NbO3-0.004BiFeO3-0.04LiSbO3(0.956KNN-0.004BF-0.04LS),研究烧结温度对陶瓷的结构与压电、介电性能和相变温度的影响.研究结果表明:所有样品均为单一的钙钛矿结构;在1100℃以下烧结的样品的相结构均呈现明显的正交相与四方相共存的特征,同时略偏向四方相区;适当的烧结温度的提高,能促进陶瓷的致密化;随着烧结温度的升高,陶瓷的压电性能先显著提高后降低,陶瓷的介电损耗先降低后提高,但对正交相与四方相转变温度(θ0-1)和居里温度(θc)的影响比较小;当烧结温度为1100℃时,陶瓷具有最好的压电与介电性能,其压电常数(d33)高达297 pC/N,机电耦合系数(kp)高达54％,居里温度为355℃,tanδ为2.6％,这表明0.956KNN-0.004BF-0.04LS无铅压电陶瓷具有广阔的应用前景.     

二次烧成对CaO-B2O3-SiO2系微晶玻璃结构和性能的影响

研究一次和二次烧成对CaO-B2O3-SiO2(CBS)微晶玻璃的烧结性能与介电性能的影响。用X线衍射(XRD)、扫描电镜(SEM)等分析探讨二次烧成对CBS微晶玻璃的微观结构与介电性能的关系。结果表明:与一次烧成相比,二次烧成能够促进玻璃体中的小晶粒生长,试样的收缩率和体积密度有所增加,有利于介电常数提高和介质损耗的降低,且体系中没有出现新的晶相;875℃烧结的试样,X/Y轴收缩率均为14.33%,体积密度达到2.46 g/cm3,10MHz介电常数和损耗相应为6.21和3.5×10-3,热膨胀系数为11.86×10-6/℃,抗折强度为157.36MPa。     

Mechanical properties and friction behaviors of CNT/AlSi<Subscript>10</Subscript>Mg composites produced by spark plasma sintering

The mechanical properties and friction behaviors of CNT/AlSi₁₀Mg composites produced by spark plasma sintering (SPS) were investigated. The results showed that the densities of the sintered composites gradually increased with increasing sintering temperature and that the highest microhardness and compressive strength were achieved in the specimen sintered at 450℃. CNTs dispersed uniformly in the AlSi₁₀Mg matrix when the addition of CNTs was less than 1.5wt%. However, when the addition of CNTs exceeded 1.5wt%, the aggregation of CNTs was clearly observed. Moreover, the mechanical properties (including the densities, compressive strength, and microhardness) of the composites changed with CNT content and reached a maximum value when the CNT content was 1.5wt%. Meanwhile, the minimum average friction coefficient and wear rate of the CNT/AlSi₁₀Mg composites were obtained with 1.0wt% CNTs.     

Si3N4的结构状态对放电等离子烧结制备Sialon陶瓷的影响

以纳米非晶-Si3N4、微米α-Si3N4、微米AlN、纳米Al2O3和纳米Y2O3为初始原料,采用放电等离子烧结工艺制备了Sialon陶瓷。通过调整配方中Si3N4对应原料的种类,研究了不同结构的Si3N4对合成Sialon陶瓷的影响。通过XRD和SEM对试样的物相和显微结构进行了表征,同时测试了试样的体积密度、抗弯强度、断裂韧性和维氏硬度。实验结果表明,配方中的Si3N4全部采用α-Si3N4,经SPS烧结后可获得α/β-Sialon陶瓷,当用纳米非晶-Si3N4逐步替换α-Si3N4时,所合成的Sialon陶瓷中的α-Sialon晶相的相对含量减少;当全部采用纳米非晶-Si3N4时,则试样中仅含有β-Sialon相。     

Ca0.85Bi0.10Cu3Ti4O12陶瓷的介电性能研究

利用固相反应法制备了Ca0.85Bi0.10Cu3Ti4O12 （BCCTO）高介电陶瓷材料.通过X射线衍射、介电频谱、阻抗谱和I-V特性曲线等测试,研究了不同烧结时间对BCCTO陶瓷结构和介电性能的影响.研究发现不同烧结温度的BCCTO陶瓷均为立方相钙钛矿结构,随烧结时间的延长其介电常数和非线性特性均有明显提高,样品表现出明显的Maxwell-Wagner （M-W）弛豫特征,表明样品中包含半导型的晶粒和绝缘层,这种IBLC结构对其介电和I-V特性都有重要贡献,延长烧结时间可以显著增强M-W弛豫特性.     

烧结温度对BaCu3Ti4O12介电性能的影响

利用固相反应法在950℃预烧结、不同烧结温度条件下制备了BaCu3Ti4O12（BCTO）陶瓷样品,测量了各样品在不同频率下的介电常数和介电损耗随温度的变化关系,发现BCTO的介电常数比BaCu3Ti4O12的介电常数小。容差因子计算发现BCTO的晶体结构容易畸变,XRD图分析表明样品中除了舍有BCTO晶相外,还舍有Cu3TiO5和Cu3TiO4等杂质,从而大大降低了BCTO的介电常数。