Modulation of low-frequency oscillations in GaAs MESFETs’ channel current by sidegating bias

Low-frequency oscillations in channel current are usually observed when measuring the GaAs MESFET‘s output characteristics. This paper studies the oscillations by testing the MESFET‘s output characteristics under different sidegate bias conditions. It is shown that the low-frequency oscillations of channel current are directly related to the sidegate bias. In other words, the sidegate bias can modulate the oscillations. Whether the sidegate bias varies positively or negatively, there will inevitably be a threshold voltage after which the low-frequency oscillations disappear. The observation is strongly dependent upon the peculiarities of channel-substrate (C-S) junction and impact ionization of traps-EL2 under high field. This conclusion is of particular pertinence to the design of low-noise GaAs IC‘s.     

EFFECT OF NEGATIVE BIAS ON DIAMOND NUCLEATION IN MICROWAVE PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION SYSTEM

Effect of direct current negative bias on diamond nucleation in microwave plasma assisted chemical vapor deposition system was discussed. The influence of the magnitude of negative bias value,bias duration and methane concentration in the gas mixture on nucleation density of diamond films was studied respectively. It is demonstrated that direct current negative bias can drastically enhance the diamond nucleation at a suitable value.Long bias duration and high methane concentration are helpful for diamond nucleation.     

Top-gated graphene field-effect transistors on SiC substrates

We report on a demonstration of top-gated graphene field-effect transistors(FETs) fabricated on epitaxial SiC substrate.Composite stacks,benzocyclobutene and atomic layer deposition Al2O3,are used as the gate dielectrics to maintain intrinsic carrier mobility of graphene.All graphene FETs exhibit n-type transistor characteristics and the drain current is nearly linear dependence on gate and drain voltages.Despite a low field-effect mobility of 40 cm2/(V s),a maximum cutoff frequency of 4.6 GHz and a maximum oscillation frequency of 1.5 GHz were obtained for the graphene devices with a gate length of 1 μm.     

Experimental optimization of phase noise performance of optoelectronic oscillator based on directly modulated laser

The experimental optimization of a 10 GHz optoelectronic oscillator (OEO) based on a 1.55 μm directly modulated distributed feedback (DFB) laser is demonstrated in this paper. The phase noise of the directly modulated laser (DML) based OEO is significantly reduced by proper selection of the laser’s bias current and by using a dispersion shifted fiber as a delay line. The phase noise performance of the DML OEO achieved after optimization is close to that of a conventional OEO constructed using a commercial DFB laser and a LiNbO 3 Mach-Zehnder modulator. The DML based OEO is most promising for future realization of a miniature OEO architecture with the components integrated on a semiconductor substrate.     

Structural and mechanical properties of amorphous carbon films deposited by the dual plasma technique

Direct current metal filtered cathodic vacuum arc (FCVA) and acetylene gas (C₂H₂) were wielded to synthesize Ti-containing amorphous carbon films on Si (100). The influence of substrate bias voltage and acetylene gas on the microstructure and mechanical properties of the films were investigated. The results show that the phase of TiC in the (111) preferential crystallographic orientation exists in the film,and the main existing pattern of carbon is sp2. With increasing the acetylene flow rate,the contents of Ti and TiC phase of the film gradually reduce; however,the thickness of the film increases. When the substrate bias voltage reaches -600 V,the internal stress of the film reaches 1.6 GPa. The micro-hardness and elastic modulus of the film can reach 33.9 and 237.6 GPa,respectively,and the friction coefficient of the film is 0.25.     

A novel lambda negative-resistance transistor in the 0.5 μm standard CMOS process

A novel negative-resistance transistor (NRT) with a Lambda shaped I-V characteristic is demonstrated in the 0.5 μm standard CMOS process. To save on the number of component devices, this device does not use standard device models provided by CMOS processes, but changes a MOSFET and a BJT into a single device by fabricating them in the same n-well, with a p-type base layer as the MOSFET’s substrate. The NRT has a low valley current of -6.82 nA and a very high peak-to-valley current ratio of 3591. The peak current of the device is -24.49 μA which is low enough to reduce the power consumption of the deivce, and the average value of its negative resistance is about 32 kΩ. Unlike most negative-resistance devices which have been fabricated on compound semiconductor substrates in recent years, this novel NRT is based on a silicon substrate, compatible with mainstream CMOS technology. Our NRT dramatically reduces the number of devices, minimizing the area of the chip, has a low power consumption and thus a further reduction in cost.     

Modulated Quasi-plane Tunneling Current

A new tutmeling junction can be formed by an insulator layer inserting into a quantum well, and in the quantum well, a quasi-plane tunneling current can be formed by applying a tunneling voltage. If a P-N junction is grown on the quantum well, the tunneling current can be modulated by a P-N junction-bias voltage. The modulated quasi-plane tunneling current is not only related to the bias voltage, but also to the depth of the quantum well. It is analyzed that the P-N junction-bias voltage how to affect the tunneling current and a method of measuring the depth of the quantum well is presented.     

Reverse leakage current in AlGaN-based ultraviolet light-emitting diodes

The reverse leakage characteristics of AlGaNbased ultraviolet light-emitting diodes fabricated on sapphire substrate are studied by temperature-variable current–voltage(I–V)measurement from 300 to 450 K.At low-reverse bias range(0–0.5 V),the reverse leakage current exhibits tunneling characteristics.Meanwhile,under a more negative reverse bias range([0.5 V),the log(I)–log(V)plots exhibit close-to-linear dependency,which is in good agreement with the transport mechanism of space-charge limited current.A phenomenological leakage current model focusing on electron transmission primarily through continuous defect band formed by linear defects like dislocations is suggested to explain the reverse current–voltage characteristics.     

Fabrication and field emission performance of arrays of vacuum microdiodes containing CuO nanowire emitters grown directly on glass without a catalyst

Arrays of vacuum microelectronic sources are fabricated on a glass substrate using cupric oxide (CuO) nanowire emitters. The arrays of electron sources possess a microdiode structure, which can effectively induce field emission and control the delivery of emitted electrons to the anode in a triode-type device operation. A technique for precisely growing CuO nanowires at the centre of microcavities in an array without using a catalyst and at temperatures as low as 400°C is presented. Such a simplified fabrication procedure results in improved field emission performance from the array compared with previous vacuum microelectronic devices. Typical prototype devices have turn-on gate voltages as low as 169 V to give emission current densities of 10 μA/cm2 at the anode. The ratio of anode current to cathode current reaches ~0.85, and the maximum change in emission current density per volt is 1 μA/cm2. Electron emission from the arrays is stable and reproducible under either pulsed or direct current fields. These characteristics indicate that microgate-controlled CuO nanowire emitters may find application in practical devices.     

Research on the adhesive ability between ITO anode and PET substrate improved by polyimide buffer layer

A layer of polyimide is adopted to improve the adhesive ability between common flexible PET (poly(ethylene terephthalate)), generally used in the FOLEDs (flexible organic light-emitting diodes), and ITO anode. It has been demonstrated by the scrape method that great improvement of the critical load value of flexible conductive substrate and lots of melioration of the substrate‘s flexibility has been made. Moreover, using such a complex substrate the current density and luminescence of the OLED device are approximately four times as much as those by using common PET substrate.     

Nonequilibrium dynamic transition in a kinetic Ising model driven by both deterministic modulation and correlated stochastic noises

We report the nonequilibrium dynamical phase transition （NDPT） appearing in a kinetic Ising spin system （ISS） subject to the joint application of a deterministic external field and the stochastic mutually correlated noises simultaneously. A time-dependent Ginzburg-Landau stochastic differential equation, including an oscillating modulation and the correlated multiplicative and additive white noises, was addressed and the numerical solution to the relevant Fokker-Planck equation was presented on the basis of an average-period approach of driven field. The correlated white noises and the deterministic modulation induce a kind of dynamic symmetry-breaking order, analogous to the stochastic resonance in trend, in the kinetic ISS, and the reentrant transition has been observed between the dynamic disorder and order phases when the intensities of multiplicative and additive noises were changing. The dependencies of a dynamic order parameter Q upon the intensities of additive noise A and multiplicative noise M, the correlation λ between two noises, and the amplitude of applied external field h were investigated quantitatively and visualized vividly. Here a brief discussion is given to outline the underlying mechanism of the NDPT in a kinetic ISS driven by an external force and correlated noises.     

Adhesion of NiCu Films DC Biased Plasma-Sputter-Deposited on MgO (001)

NiCu films about 60nm thick were deposited on MgO (001) substrates at 230℃ by DC plasma-sputtering at 2.7kV and 8mA in pure Ar gas using a Ni₉₀Cu₁₀ target. A DC bias voltage U_s of 0, 60, 110 or 140V was applied to the substrate during deposition. The adhesion of the film to the substrate was studied using a scratch test as a function of U_s. The application of U_s is very effective in increasing the adhesion of the film to the substrate. In conclusion, the adhesion increases with cleaning the substrate surface by sputtering off impurity admolecules during the film initial formation due to the energetic Ar ion particle bombardment.     

Influence and determinative factors of ion-to-atom arrival ratio in unbalanced magnetron sputtering systems

Low pressure sputtering with a controlled ratio of ion flux to deposited atom flux at the condensing surface is one of the main directions of development of magnetron sputtering methods. Unbalanced magnetron sputtering, by producing dense secondary plasma around the substrate, provides a high ion current density. The closed-field unbalanced magnetron sputtering system (CFUBMS) has been established as a versatile technique for high-rate deposition high-quality metal, alloy, and ceramic thin films. The'key factor in the CFUBMS system is the ability to transport high ion currents to the substrate, which can enhance the formation of full dense coatings at relatively low value homologous temperature. The investigation shows that the energy of ions incidenced at the substrate and the ratio of the flux of these ions to the flux of condensing atoms are the fundamental parameters in determining the structure and properties of films produced by ion-assisted deposition processes. Increasing ion bombardment during deposition combined with increasing mobility of the condensing atoms favors the formation of a dense microstructure and a smooth surface.     

A novel multi-sensor multiple model particle filter with correlated noises for maneuvering target tracking

Aiming at the effective realization of particle filter for maneuvering target tracking in multi-sensor measurements,a novel multi-sensor multiple model particle filtering algorithm with correlated noises is proposed.Combined with the kinetic evolution equation of target state,a multi-sensor multiple model particle filter is firstly constructed,which is also used as the basic framework of a new algorithm.In the new algorithm,in order to weaken the adverse influence from random measurement noises in the measuring process of particle weight,a weight optimization strategy is introduced to improve the reliability and stability of particle weight.In addition,considering the correlated noise existing in the practical engineering,a decoupling method of correlated noise is given by the rearrangement and transformation of the state transition equation and measurement equation.Since the weight optimization strategy and noise decoupling method adopt respectively the center fusion structure and the off-line way,it improves the adverse effect effectively on computational complexity for increasing state dimension and sensor number.Finally,the theoretical analysis and experimental results show the feasibility and efficiency of the proposed algorithm.     

A method of eliminating noises in Web pages by style tree model and its applications

A Web page typically contains many information blocks. Apart from the main content blocks, it usually has such blocks as navigation panels, copyright and privacy notices, and advertisements. We call these blocks the noisy blocks. The noises in Web pages can seriously harm Web data mining. To the question of eliminating these noises, we introduce a new tree structure, called Style Tree, and study an algorithm how to construct a site style tree. The Style Tree Model is employed to detect and eliminate noises in any Web pages of the site. An information based measure to determine which element node is noisy is also constructed. In addition, the applications of this method are discussed in detail. Experimental results show that our noises elimination technique is able to improve the mining results significantly.     

Temperature dependence of niobium superconducting nanowire single-photon detectors in He-3 cryocooler

Performances of superconducting nanowire single-photon detectors （SNSPDs） based on low Tc mate- rials strongly depend on the operating temperatures. We have fabricated infrared-sensitive niobium SNSPDs based on doped niobium （Nb＊） films and measured them in He-3 cryocooler. The critical current approaches to the de-pair- ing current at 0.3 K. Therefore, with the decrease in tem- peratures, we have observed a monotonous increase of count rate at the wavelength of 1,521 nm and exponential decrease of dark count rate at all bias currents. The possible origin of dark counts for doped Nb devices is also discussed.     

Realization of a tunable analog predistorter using parallel combination technique for laser driver applications

This paper describes a new approach for designing analog predistorters that can compensate for the nonlinear distortion of laser drivers in a radio-over-fiber(RoF) system.In contrast to previous works,this paper analyzes the transfer characteristics of CMOS transistors,by combining parallel currents of CMOS transistors in various W/L and negative bias voltages to realize the tunable analog predistortion function.The circuit is fabricated by a standard 0.18μm CMOS technology.The core circuit current consumption is only 15 mA and the entire driver circuit works in a band-pass from 1 ~2.2GHz.Experimental results of two-tone tests have shown that with an analog predistortoer the IIP3 of the laser driver circuit has an improvement of 4.91 dB.     

Analytical optimization for field emission of carbon nanotube array

To optimize field emission （FE） property of carbon nanotube （CNT） array on a planar cathode surface, the Fowler-Nordheim formula has been used to discuss the maximum of the emission current density with the floating sphere model in this paper. The emission current density is dominating as the analytical Fowler-Nordheim function of the intertube distance, and the maximum of the emission current density is deduced and discussed. The results indicate that the intertube distance in CNT array critically affects the field enhancement factor and the emission current density, whose maximum occurs at the intertube distance approximating a tenth of the tube height. Considering the emission current density and the field enhancement factor, the FE can be optimized analytically when the intertube distance is about a tenth of the tube height.     

Effect of the contact distance on transport properties of an orsanic molecular device

Using a spatially symmetric phenyldithiolate molecule sandwiched between two gold electrodes as model system and through shifting one electrode from symmetric contact site to form asymmetric contact, we investigated the properties of electronic transport in such a device by the first-principles. It was found that the/（G ）-V characteristics of a device show significant asymmetry and the magnitudes of current and conductance depend remarkably on the variation of molecule-metal distance at one of the two contacts. Namely, an asymmetric contact would lead to the weak rectifying effects on the current-voltage characteristics of a molecular device. The analysis shows that the HOMO is responsible for the resonant tunneling and its shift due to the charging of the device while the bias voltage is the intrinsic origin of asymmetric/（G）- Vcharacteristics.     

Modeling of Biofiltration Process in Drinking Water Treatment

The aim of this research is to develop a representative model which simulates the performance of a biofilter used to treat drinking water.A steady-sate model is applied.The Monod-type substrate utilization is used,and the external and the internal mass transfer are neglected in this model.The model describes the process of substrate biodegradation,bacterial attachment onto filter media,and detachment of suspended bacteria.It simulates the natural organic matter (NOM) and biomass profiles in a biofilter as a function of filter depth and filtration velocity.The key biokinetic parameters k and KS are estimated through a special experiment.The results of the model testing show that the model prediction agrees well with the experimental data