Designer Dirac fermions and topological phases in molecular graphene

The observation of massless Dirac fermions in monolayer graphene has generated a new area of science and technology seeking to harness charge carriers that behave relativistically within solid-state materials. Both massless and massive Dirac fermions have been studied and proposed in a growing class of Dirac materials that includes bilayer graphene, surface states of topological insulators and iron-based high-temperature superconductors. Because the accessibility of this physics is predicated on the synthesis of new materials, the quest for Dirac quasi-particles has expanded to artificial systems such as lattices comprising ultracold atoms. Here we report the emergence of Dirac fermions in a fully tunable condensed-matter system-molecular graphene-assembled by atomic manipulation of carbon monoxide molecules over a conventional two-dimensional electron system at a copper surface. Using low-temperature scanning tunnelling microscopy and spectroscopy, we embed the symmetries underlying the two-dimensional Dirac equation into electron lattices, and then visualize and shape the resulting ground states. These experiments show the existence within the system of linearly dispersing, massless quasi-particles accompanied by a density of states characteristic of graphene. We then tune the quantum tunnelling between lattice sites locally to adjust the phase accrual of propagating electrons. Spatial texturing of lattice distortions produces atomically sharp p-n and p-n-p junction devices with two-dimensional control of Dirac fermion density and the power to endow Dirac particles with mass. Moreover, we apply scalar and vector potentials locally and globally to engender topologically distinct ground states and, ultimately, embedded gauge fields, wherein Dirac electrons react to 'pseudo' electric and magnetic fields present in their reference frame but absent from the laboratory frame. We demonstrate that Landau levels created by these gauge fields can be taken to the relativistic magnetic quantum limit, which has so far been inaccessible in natural graphene. Molecular graphene provides a versatile means of synthesizing exotic topological electronic phases in condensed matter using tailored nanostructures.     

Spin-galvanic effect

There is much recent interest in exploiting the spin of conduction electrons in semiconductor heterostructures together with their charge to realize new device concepts. Electrical currents are usually generated by electric or magnetic fields, or by gradients of, for example, carrier concentration or temperature. The electron spin in a spin-polarized electron gas can, in principle, also drive an electrical current, even at room temperature, if some general symmetry requirements are met. Here we demonstrate such a 'spin-galvanic' effect in semiconductor heterostructures, induced by a non-equilibrium, but uniform population of electron spins. The microscopic origin for this effect is that the two electronic sub-bands for spin-up and spin-down electrons are shifted in momentum space and, although the electron distribution in each sub-band is symmetric, there is an inherent asymmetry in the spin-flip scattering events between the two sub-bands. The resulting current flow has been detected by applying a magnetic field to rotate an optically oriented non-equilibrium spin polarization in the direction of the sample plane. In contrast to previous experiments, where spin-polarized currents were driven by electric fields in semiconductor, we have here the complementary situation where electron spins drive a current without the need of an external electric field.     

Spin-orbit qubit in a semiconductor nanowire

Motion of electrons can influence their spins through a fundamental effect called spin-orbit interaction. This interaction provides a way to control spins electrically and thus lies at the foundation of spintronics. Even at the level of single electrons, the spin-orbit interaction has proven promising for coherent spin rotations. Here we implement a spin-orbit quantum bit (qubit) in an indium arsenide nanowire, where the spin-orbit interaction is so strong that spin and motion can no longer be separated. In this regime, we realize fast qubit rotations and universal single-qubit control using only electric fields; the qubits are hosted in single-electron quantum dots that are individually addressable. We enhance coherence by dynamically decoupling the qubits from the environment. Nanowires offer various advantages for quantum computing: they can serve as one-dimensional templates for scalable qubit registers, and it is possible to vary the material even during wire growth. Such flexibility can be used to design wires with suppressed decoherence and to push semiconductor qubit fidelities towards error correction levels. Furthermore, electrical dots can be integrated with optical dots in p-n junction nanowires. The coherence times achieved here are sufficient for the conversion of an electronic qubit into a photon, which can serve as a flying qubit for long-distance quantum communication.     

石墨烯银纳米线透明导电薄膜的制备进展

透明导电薄膜是触摸器件以及液晶显示器等的重要组成部分,制备透明导电薄膜的材料主要有金属氧化物、导电聚合物、碳材料、金属材料和复合材料等。其中,一维银纳米线和二维石墨烯材料制备透明导电薄膜具有光电性能优异、化学性能稳定和柔韧性好等特点,有望应用于柔性电子设备中。介绍了石墨烯银纳米线透明导电薄膜常用的制备方法：旋涂法、真空抽滤法、棒涂法、喷涂法、滴涂法等5种以及各种制备方法的优缺点;总结了石墨烯银纳米线复合薄膜的应用领域;展望了石墨烯银纳米线透明导电薄膜的发展前景。     

Spin entropy as the likely source of enhanced thermopower in Na(x)Co2O4

In an electric field, the flow of electrons in a solid produces an entropy current in addition to the familiar charge current. This is the Peltier effect, and it underlies all thermoelectric refrigerators. The increased interest in thermoelectric cooling applications has led to a search for more efficient Peltier materials and to renewed theoretical investigation into how electron-electron interaction may enhance the thermopower of materials such as the transition-metal oxides. An important factor in this enhancement is the electronic spin entropy, which is predicted to dominate the entropy current. However, the crucial evidence for the spin-entropy term, namely its complete suppression in a longitudinal magnetic field, has not been reported until now. Here we report evidence for such suppression in the layered oxide Na(x)Co2O4, from thermopower and magnetization measurements in both longitudinal and transverse magnetic fields. The strong dependence of thermopower on magnetic field provides a rare, unambiguous example of how strong electron-electron interaction effects can qualitatively alter electronic behaviour in a solid. We discuss the implications of our finding--that spin-entropy dominates the enhancement of thermopower in transition-metal oxides--for the search for better Peltier materials.     

Spintronic materials and devices based on antiferromagnetic metals

In this paper, we review our recent experimental developments on antiferromagnet (AFM) spintronics mainly comprising Mn-based noncollinear AFM metals. IrMn-based tunnel junctions and Hall devices have been investigated to explore the manipulation of AFM moments by magnetic fields, ferromagnetic materials and electric fields. Room-temperature tunneling anisotropic magnetoresistance based on IrMn as well as FeMn has been successfully achieved, and electrical control of the AFM exchange spring is realized by adopting ionic liquid. In addition, promising spin-orbit effects in AFM as well as spin transfer via AFM spin waves reported by different groups have also been reviewed, indicating that the AFM can serve as an efficient spin current source. To explore the crucial role of AFM acting as efficient generators, transmitters, and detectors of spin currents is an emerging topic in the field of magnetism today. AFM metals are now ready to join the rapidly developing fields of basic and applied spintronics, enriching this area of solid-state physics and microelectronics.     

Experimental observation of the quantum Hall effect and Berry's phase in graphene

When electrons are confined in two-dimensional materials, quantum-mechanically enhanced transport phenomena such as the quantum Hall effect can be observed. Graphene, consisting of an isolated single atomic layer of graphite, is an ideal realization of such a two-dimensional system. However, its behaviour is expected to differ markedly from the well-studied case of quantum wells in conventional semiconductor interfaces. This difference arises from the unique electronic properties of graphene, which exhibits electron-hole degeneracy and vanishing carrier mass near the point of charge neutrality. Indeed, a distinctive half-integer quantum Hall effect has been predicted theoretically, as has the existence of a non-zero Berry's phase (a geometric quantum phase) of the electron wavefunction--a consequence of the exceptional topology of the graphene band structure. Recent advances in micromechanical extraction and fabrication techniques for graphite structures now permit such exotic two-dimensional electron systems to be probed experimentally. Here we report an experimental investigation of magneto-transport in a high-mobility single layer of graphene. Adjusting the chemical potential with the use of the electric field effect, we observe an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene. The relevance of Berry's phase to these experiments is confirmed by magneto-oscillations. In addition to their purely scientific interest, these unusual quantum transport phenomena may lead to new applications in carbon-based electronic and magneto-electronic devices.     

Megagauss sensors

Magnetic fields change the way that electrons move through solids. The nature of these changes reveals information about the electronic structure of a material and, in auspicious circumstances, can be harnessed for applications. The silver chalcogenides, Ag2Se and Ag2Te, are non-magnetic materials, but their electrical resistance can be made very sensitive to magnetic field by adding small amounts--just 1 part in 10,000--of excess silver. Here we show that the resistance of Ag2Se displays a large, nearly linear increase with applied magnetic field without saturation to the highest fields available, 600,000 gauss, more than a million times the Earth's magnetic field. These characteristics of large (thousands of per cent) and near-linear response over a large field range make the silver chalcogenides attractive as magnetic-field sensors, especially in physically tiny megagauss (10(6) G) pulsed magnets where large fields have been produced but accurate calibration has proved elusive. High-field studies at low temperatures reveal both oscillations in the magnetoresistance and a universal scaling form that point to a quantum origin for this material's unprecedented behaviour.     

Coupling of spin and orbital motion of electrons in carbon nanotubes

Electrons in atoms possess both spin and orbital degrees of freedom. In non-relativistic quantum mechanics, these are independent, resulting in large degeneracies in atomic spectra. However, relativistic effects couple the spin and orbital motion, leading to the well-known fine structure in their spectra. The electronic states in defect-free carbon nanotubes are widely believed to be four-fold degenerate, owing to independent spin and orbital symmetries, and also to possess electron-hole symmetry. Here we report measurements demonstrating that in clean nanotubes the spin and orbital motion of electrons are coupled, thereby breaking all of these symmetries. This spin-orbit coupling is directly observed as a splitting of the four-fold degeneracy of a single electron in ultra-clean quantum dots. The coupling favours parallel alignment of the orbital and spin magnetic moments for electrons and antiparallel alignment for holes. Our measurements are consistent with recent theories that predict the existence of spin-orbit coupling in curved graphene and describe it as a spin-dependent topological phase in nanotubes. Our findings have important implications for spin-based applications in carbon-based systems, entailing new design principles for the realization of quantum bits (qubits) in nanotubes and providing a mechanism for all-electrical control of spins in nanotubes.     

Ferroelectricity from iron valence ordering in the charge-frustrated system LuFe2O4

Ferroelectric materials are widely used in modern electric devices such as memory elements, filtering devices and high-performance insulators. Ferroelectric crystals have a spontaneous electric polarization arising from the coherent arrangement of electric dipoles (specifically, a polar displacement of anions and cations). First-principles calculations and electron density analysis of ferroelectric materials have revealed that the covalent bond between the anions and cations, or the orbital hybridization of electrons on both ions, plays a key role in establishing the dipolar arrangement. However, an alternative model-electronic ferroelectricity-has been proposed in which the electric dipole depends on electron correlations, rather than the covalency. This would offer the attractive possibility of ferroelectric materials that could be controlled by the charge, spin and orbital degrees of freedom of the electron. Here we report experimental evidence for ferroelectricity arising from electron correlations in the triangular mixed valence oxide, LuFe(2)O(4). Using resonant X-ray scattering measurements, we determine the ordering of the Fe(2+) and Fe(3+) ions. They form a superstructure that supports an electric polarization consisting of distributed electrons of polar symmetry. The polar ordering arises from the repulsive property of electrons-electron correlations-acting on a frustrated geometry.     

双碳链体系中自旋过滤效应的第一性原理研究

采用第一性原理密度泛函理论方法研究了平行放置的双碳原子链体系中的自旋输运情况.将双碳原子链置于12个宽度锯齿型石墨烯纳米带组成的双电极中,研究发现:双碳原子链体系中的自旋过滤效果优于单条碳原子链体系中的自旋过滤效果; 更重要的是,在单条碳原子链体系中,当左右电极磁性反平行时,没有自旋过滤效果,双碳链结构彻底改变了单碳链体系中这种情况,即在双碳链体系中,不管2个电极的磁性是平行结构还是反平行结构,自旋过滤效果都近100%,是非常好的自旋过滤电子器件.     

Graphene-based hybrid materials and their applications in energy storage and conversion

Graphene attracts more and more scientists and researchers owing to its superior electronic,thermal,and mechanical properties.For material scientists,graphene is a kind of versatile building blocks,and considerable progress has been made in recent years.Graphene-based hybrid materials have been prepared by incorporating inorganic species and/or cross-linking of organic species through covalent and/or noncovalent interactions.The graphene-based hybrid materials show improved or excellent performance in various fields.In this review,we summarize the synthesis of graphene and graphene-based hybrid materials,and their applications in energy storage and conversion.     

Magnetization vector manipulation by electric fields

Conventional semiconductor devices use electric fields to control conductivity, a scalar quantity, for information processing. In magnetic materials, the direction of magnetization, a vector quantity, is of fundamental importance. In magnetic data storage, magnetization is manipulated with a current-generated magnetic field (Oersted-Ampère field), and spin current is being studied for use in non-volatile magnetic memories. To make control of magnetization fully compatible with semiconductor devices, it is highly desirable to control magnetization using electric fields. Conventionally, this is achieved by means of magnetostriction produced by mechanically generated strain through the use of piezoelectricity. Multiferroics have been widely studied in an alternative approach where ferroelectricity is combined with ferromagnetism. Magnetic-field control of electric polarization has been reported in these multiferroics using the magnetoelectric effect, but the inverse effect-direct electrical control of magnetization-has not so far been observed. Here we show that the manipulation of magnetization can be achieved solely by electric fields in a ferromagnetic semiconductor, (Ga,Mn)As. The magnetic anisotropy, which determines the magnetization direction, depends on the charge carrier (hole) concentration in (Ga,Mn)As. By applying an electric field using a metal-insulator-semiconductor structure, the hole concentration and, thereby, the magnetic anisotropy can be controlled, allowing manipulation of the magnetization direction.     

A laser-plasma accelerator producing monoenergetic electron beams

Particle accelerators are used in a wide variety of fields, ranging from medicine and biology to high-energy physics. The accelerating fields in conventional accelerators are limited to a few tens of MeV m(-1), owing to material breakdown at the walls of the structure. Thus, the production of energetic particle beams currently requires large-scale accelerators and expensive infrastructures. Laser-plasma accelerators have been proposed as a next generation of compact accelerators because of the huge electric fields they can sustain (>100 GeV m(-1)). However, it has been difficult to use them efficiently for applications because they have produced poor-quality particle beams with large energy spreads, owing to a randomization of electrons in phase space. Here we demonstrate that this randomization can be suppressed and that the quality of the electron beams can be dramatically enhanced. Within a length of 3 mm, the laser drives a plasma bubble that traps and accelerates plasma electrons. The resulting electron beam is extremely collimated and quasi-monoenergetic, with a high charge of 0.5 nC at 170 MeV.     

Giant magnetoresistance in organic spin-valves

A spin valve is a layered structure of magnetic and non-magnetic (spacer) materials whose electrical resistance depends on the spin state of electrons passing through the device and so can be controlled by an external magnetic field. The discoveries of giant magnetoresistance and tunnelling magnetoresistance in metallic spin valves have revolutionized applications such as magnetic recording and memory, and launched the new field of spin electronics--'spintronics'. Intense research efforts are now devoted to extending these spin-dependent effects to semiconductor materials. But while there have been noteworthy advances in spin injection and detection using inorganic semiconductors, spin-valve devices with semiconducting spacers have not yet been demonstrated. pi-conjugated organic semiconductors may offer a promising alternative approach to semiconductor spintronics, by virtue of their relatively strong electron-phonon coupling and large spin coherence. Here we report the injection, transport and detection of spin-polarized carriers using an organic semiconductor as the spacer layer in a spin-valve structure, yielding low-temperature giant magnetoresistance effects as large as 40 per cent.     

Emerging local Kondo screening and spatial coherence in the heavy-fermion metal YbRh2Si2

The entanglement of quantum states is both a central concept in fundamental physics and a potential tool for realizing advanced materials and applications. The quantum superpositions underlying entanglement are at the heart of the intricate interplay of localized spin states and itinerant electronic states that gives rise to the Kondo effect in certain dilute magnetic alloys. In systems where the density of localized spin states is sufficiently high, they can no longer be treated as non-interacting; if they form a dense periodic array, a Kondo lattice may be established. Such a Kondo lattice gives rise to the emergence of charge carriers with enhanced effective masses, but the precise nature of the coherent Kondo state responsible for the generation of these heavy fermions remains highly debated. Here we use atomic-resolution tunnelling spectroscopy to investigate the low-energy excitations of a generic Kondo lattice system, YbRh(2)Si(2). We find that the hybridization of the conduction electrons with the localized 4f electrons results in a decrease in the tunnelling conductance at the Fermi energy. In addition, we observe unambiguously the crystal-field excitations of the Yb(3+) ions. A strongly temperature-dependent peak in the tunnelling conductance is attributed to the Fano resonance resulting from tunnelling into the coherent heavy-fermion states that emerge at low temperature. Taken together, these features reveal how quantum coherence develops in heavy 4f-electron Kondo lattices. Our results demonstrate the efficiency of real-space electronic structure imaging for the investigation of strong electronic correlations, specifically with respect to coherence phenomena, phase coexistence and quantum criticality.     

Coherent spin manipulation without magnetic fields in strained semiconductors

A consequence of relativity is that in the presence of an electric field, the spin and momentum states of an electron can be coupled; this is known as spin-orbit coupling. Such an interaction opens a pathway to the manipulation of electron spins within non-magnetic semiconductors, in the absence of applied magnetic fields. This interaction has implications for spin-based quantum information processing and spintronics, forming the basis of various device proposals. For example, the concept of spin field-effect transistors is based on spin precession due to the spin-orbit coupling. Most studies, however, focus on non-spin-selective electrical measurements in quantum structures. Here we report the direct measurement of coherent electron spin precession in zero magnetic field as the electrons drift in response to an applied electric field. We use ultrafast optical techniques to spatiotemporally resolve spin dynamics in strained gallium arsenide and indium gallium arsenide epitaxial layers. Unexpectedly, we observe spin splitting in these simple structures arising from strain in the semiconductor films. The observed effect provides a flexible approach for enabling electrical control over electron spins using strain engineering. Moreover, we exploit this strain-induced field to electrically drive spin resonance with Rabi frequencies of up to approximately 30 MHz.     

Temporal evolution of the electric field accelerating electrons away from the auroral ionosphere.

The bright night-time aurorae that are visible to the unaided eye are caused by electrons accelerated towards Earth by an upward-pointing electric field. On adjacent geomagnetic field lines the reverse process occurs: a downward-pointing electric field accelerates electrons away from Earth. Such magnetic-field-aligned electric fields in the collisionless plasma above the auroral ionosphere have been predicted, but how they could be maintained is still a matter for debate. The spatial and temporal behaviour of the electric fields-a knowledge of which is crucial to an understanding of their nature-cannot be resolved uniquely by single satellite measurements. Here we report on the first observations by a formation of identically instrumented satellites crossing a beam of upward-accelerated electrons. The structure of the electric potential accelerating the beam grew in magnitude and width for about 200 s, accompanied by a widening of the downward-current sheet, with the total current remaining constant. The 200-s timescale suggests that the evacuation of the electrons from the ionosphere contributes to the formation of the downward-pointing magnetic-field-aligned electric fields. This evolution implies a growing load in the downward leg of the current circuit, which may affect the visible discrete aurorae.     

电子隧道效应新释

用经典物理的办法解释了电子隧道效应,认为电子隧道效应是导体中的自由电子扩散到绝缘层中,使得绝缘层中的价电子能态升高,由束缚态（局域态）转变成自由态（公有化态）,从而参与裁流的现象：导体中的自由电子扩散到绝缘层中,由于库仑斥力的作用,使得绝缘层中的价电子在晶格势场中的能态升高,降低了势垒高度,同时,由于载流子定向运动产生的霍尔电场对价电子做功及电流产生的焦耳热也使得价电子能态升高。在三个因素的影响之下,绝缘层中价电子能态升高,由局域态转变成自由状态,从而参与载流。根据绝缘层厚度和隧道效应的尺寸,可以判定金属中价电子对绝缘层中价电子的作用范围大约是十几A的限度．     

Correlated electron emission in multiphoton double ionization

Electronic correlations govern the dynamics of many phenomena in nature, such as chemical reactions and solid state effects, including superconductivity. Such correlation effects can be most clearly investigated in processes involving single atoms. In particular, the emission of two electrons from an atom--induced by the impact of a single photon, a charged particle or by a short laser pulse--has become the standard process for studies of dynamical electron correlations. Atoms and molecules exposed to laser fields that are comparable in intensity to the nuclear fields have extremely high probabilities for double ionization; this has been attributed to electron-electron interaction. Here we report a strong correlation between the magnitude and the direction of the momentum of two electrons that are emitted from an argon atom, driven by a femtosecond laser pulse (at 38 TW cm(-2)). Increasing the laser intensity causes the momentum correlation between the electrons to be lost, implying that a transition in the laser-atom coupling mechanism takes place.