Electrodeposition and characterization of thermoelectric Bi_2Se_3 thin films

Bi2Se3 thin films were electrochemically deposited on Ti and indium tin oxide-coated glass substrates,respectively,at room temperature,using Bi(NO3)3·5H2O and SeO2 as starting materials in diluted HNO 3 solution.A conventional three-electrode cell was used with a platinum sheet as a counter electrode,and a saturated calomel electrode was used as a reference electrode.The films were annealed in argon atmosphere.The influence of cold isostatic pressing before annealing on the microstructure and thermoelectric properties of the films was investigated.X-ray diffraction analysis indicates that the film grown on the indium tin oxide-coated glass substrate is pure rhombohedral Bi 2 Se 3,and the film grown on the Ti substrate consists of both rhombohedral and orthorhombic Bi 2 Se 3.     

Preparation and radar-absorbing properties of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/TiO<Subscript>2</Subscript>/Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>/Yb<Subscript>2</Subscript>O<Subscript>3</Subscript> composite powder

Al₂O₃/TiO₂/Fe₂O₃/Yb₂O₃ composite powder was synthesized via the sol-gel method. The structure, morphology, and radar-absorption properties of the composite powder were characterized by transmission electron microscopy, X-ray diffraction analysis and RF impedance analysis. The results show that two types of particles exist in the composite powder. One is irregular flakes (100-200 nm) and the other is spherical Al₂O₃ particles (smaller than 80 nm). Electromagnetic wave attenuation is mostly achieved by dielectric loss. The maximum value of the dissipation factor reaches 0.76 (at 15.68 GHz) in the frequency range of 2-18 GHz. The electromagnetic absorption of waves covers 2-18 GHz with the matching thicknesses of 1.5-4.5 mm. The absorption peak shifts to the lower-frequency area with increasing matching thickness. The effective absorption band covers the frequency range of 2.16-9.76 GHz, and the maximum absorption peak reaches -20.18 dB with a matching thickness of 3.5 mm at a frequency of 3.52 GHz.     

Synthesis, Characterization and Calorimetry of Ni（C4H8N2O3）2Cl2

A coordination complex was synthesized from NiCl2 and dipeptide glycylglycine（GG）. It was characterized by element analysis, NMR and TG methods, and then was determined to be Ni（C4HsN2O3）2Cl2. Using an isoperibolic reaction calorimeter, the standard molar enthalpy of formation of Ni（GG）2Cl2（solid） has been determined to be -（1 674.66±2.02） kJ · mol^-1 at 298.15 K.     

Fabrication and characteristics of intrinsic Josephson junctions in Bi<Subscript>2</Subscript>Sr<Subscript>2</Subscript>CaCu<Subscript>2</Subscript>O<Subscript>8+x</Subscript> single crystals

Mesa-structured intrinsic Jospehson junctions are fabricated in Bi2Sr2CaCu2O8 x single crystals.Typical current-voltage characteristics of intrinsic Josephson junctions are observed .which include multiple quasi-particle branches,surface junction with critical current lower than those of inner junctions.and subgap structures on quasi-particle branches,The corresponding physical explanations are also given .The energy gap voltage of the intrinsic Josephson junctions at 30 K is about 20mV Besides,The measured Ic-T relationship agrees quite well with the theoretical computations based on dx′-y′-wave superconductor.Our measured dI/dV-V relationship shows the V-shaped gap structure,obviously differing from the U-shaped gap structure of the s-wave superconductor.     

Acid etching process for fabrication of Bi2Sr2CaCu2O8＋x stack

We adopted a new method, acid etching process, to fabricate the intrinsic Josephson junctions based on the Bi2Sr2CaCu2O8 x single crystals. By soaking the crystals into the dilute hydrochloric acid, we fabricated a junction stack successfully, and meantime made the surrounding area insulated. A certain concentration of hydrochloric acid was used to maintain the roughness of the modified layer. The cur-rent-voltage characteristic was achieved through the four terminal measurement. We could control the junctions' number by changing the concentration and the soaking time. We also found that the thick-ness of the stack was equal to the average height of the insulation layer. Such a simple, convenient and controllable fabrication method with a high yield might widen the applications of the intrinsic Joseph-son junctions.     

Giant magneto-optical faraday effect of nanometer Fe-In<Subscript>2</Subscript>O<Subscript>3</Subscript> granular films

The giant magneto-optical Faraday effect of nanometer ferromagnetic metal-semiconductor matrix Fe-ln2O3 granular films prepared by the radio frequency sputtering are studied. The result shows that the Faraday rotation angle θF value of the granular film samples with Fe volume fraction x = 35% is of the order of 10^5（°）/cm at room temperature. Temperature dependence of the Faraday rotation angle θF of Fe0.35（In2O3）0.65 granular films shows that θF value below 10 K increases rapidly with the decrease of the temperature, and when T= 4.2 K, θF value is 106（°）/cm. Through the study of the dependence of low field susceptibility on temperature and the hysteresis loops at different temperatures, it has been found that when the temperature decreases to a critical point Tp = 10 K, the transformation of state from ferro-agnetic to spin-glass-like occurs in Fe0.35（In2O3）0.65 granular films. The remarkable increase of the Faraday rotation angle θF value of Fe0.35（In2O3）0.65 granular films below 10 K seems to arise from the sp-d exchange interaction of the granular film samples in the spin-glass-like state.     

Chemical quenching and inhibition of positronium in Cr<Subscript>2</Subscript>O<Subscript>3</Subscript>/Al<Subscript>2</Subscript>O<Subscript>3</Subscript> catalysts

The pore structure of Cr2O3/Al2O3 catalysts and the surface chemical properties of these pores were characterized by positron lifetime and coincidence Doppler broadening (CDB) measurements. Four lifetime components could be resolved from the positron lifetime spectrum, with two long lifetime components and two short lifetime components. The two long lifetimes τ4 and τ3 are attributed to ortho-positronium (o-Ps) annihilation in large pores and microvoids, respectively. With increasing Cr2O3 content, both τ4 and its intensity I4 show sharp decrease, while τ3 and its intensity I3 keep nearly unchanged. The Doppler broadening S parameters also show sharp decrease with increasing Cr2O3 content. Detailed analysis of the CDB spectrum reveals that the parapositronium (p-Ps) intensity also decreases with increasing Cr2O3 content. This indicates that the change of o-Ps lifetime τ4 is due to the chemical quenching by Cr2O3 but not spin-conversion of positronium. The decrease of o-Ps intensity I4 indicates that Cr2O3 also inhibits positronium formation.     

Preparation and characterization of γ-La<Subscript>2</Subscript>S<Subscript>3</Subscript> nanoparticles from thermal decomposition

To synthesize pure γ-La₂S₃ at lower temperature, lanthanide complex La(Et₂S₂CN)₃·phen, containing La-S bond, was chosen as the precursors to decompose. The obtained samples were characterized by X-ray power diffraction (XRD), field-emission scanning electron microscopy (FE-SEM) with an energy dispersive spectrometer and UV-Vis diffuse reflectance spectra. The decomposition mechanism of the lanthanide complex was studied by thermogravimetric analyses (TGA). The results show that the obtained samples are cubic phase particles with sizes among 20–50 nm and the band gap is 2.97 eV, which is bigger than that of its bulk crystal. TG/DTG results indicate that La(Et₂S₂CN)₃·phen decomposed to γ-La₂S₃ via La₄(Et₂S₂CN)₃ as an intermediate product.     

Micro-arc oxidization fabrication and ethanol sensing performance of Fe-doped TiO<Subscript>2</Subscript> thin films

In-situ pure TiO₂ and Fe-doped TiO₂ thin films were synthesized on Ti plates via the micro-arc oxidation (MAO) technique. The as-fabricated anatase TiO₂ thin film-based conductometric sensors were employed to measure the gas sensitivity to ethanol. The results showed that Fe ions could be easily introduced into the MAO-TiO₂ thin films by adding precursor K₄(FeCN)₆·3H₂O into the Na₃PO₄ electrolyte. The amount of doped Fe ions increased almost linearly with the concentration of K₄(FeCN)₆·3H₂O increasing, eventually affecting the ethanol sensing performances of TiO₂ thin films. It was found that the enhanced sensor signals obtained had an optimal concentration of Fe dopant (1.28at%), by which the maximal gas sensor signal to 1000 ppm ethanol was estimated to be 7.91 at 275°C. The response time was generally reduced by doped Fe ions, which could be ascribed to the increase of oxygen vacancies caused by Fe³⁺ substituting for Ti⁴⁺.     

Synthesis and characterization of Fe<Subscript>3</Subscript>O<Subscript>4</Subscript>@SiO<Subscript>2</Subscript> magnetic composite nanoparticles by a one-pot process

Fe₃O₄@SiO₂ core–shell composite nanoparticles were successfully prepared by a one-pot process. Tetraethyl-orthosilicate was used as a surfactant to synthesize Fe₃O₄@SiO₂ core–shell structures from prepared Fe₃O₄ nanoparticles. The properties of the Fe₃O₄ and Fe₃O₄@SiO₂ composite nanoparticles were studied by X-ray diffraction, transmission electron microscopy, energy dispersive spectroscopy, and Fourier transform infrared spectroscopy. The prepared Fe₃O₄ particles were approximately 12 nm in size, and the thickness of the SiO₂ coating was approximately 4 nm. The magnetic properties were studied by vibrating sample magnetometry. The results show that the maximum saturation magnetization of the Fe₃O₄@SiO₂ powder (34.85 A·m2·kg–1) was markedly lower than that of the Fe₃O₄ powder (79.55 A·m2·kg–1), which demonstrates that Fe₃O₄ was successfully wrapped by SiO₂. The Fe₃O₄@SiO₂ composite nanoparticles have broad prospects in biomedical applications; thus, our next study will apply them in magnetic resonance imaging.     

Electro-deoxidation of V<Subscript>2</Subscript>O<Subscript>3</Subscript> in molten CaCl<Subscript>2</Subscript>-NaCl-CaO

The electro-deoxidation of V₂O₃ precursors was studied. Experiments were carried out with a two-terminal electrochemical cell, which was comprised of a molten electrolyte of CaCl₂ and NaCl with additions of CaO, a cathode of compact V₂O₃, and a graphite anode under the potential of 3.0 V at 1173 K. The phase constitution and composition as well as the morphology of the samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). 3 g of V₂O₃ could be converted to vanadium metal powder within the processing time of 8 h. The kinetic pathway was investigated by analyzing the product phase in samples prepared at different reduction stages. CaO added in the reduction path of V₂O₃ formed the intermediate product CaV₂O₄.     

Dissolution of Al<Subscript>2</Subscript>TiO<Subscript>5</Subscript> inclusions in CaO-SiO<Subscript>2</Subscript>-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> slags at 1823 K

Al-Ti-O inclusions always clog submerged nozzles in Ti-bearing Al-killed steel. A typical synthesized Al₂TiO₅ inclusion was immersed in a CaO-SiO₂-Al₂O₃ molten slag for different durations at 1823 K. The Al₂TiO₅ dissolution paths and mechanism were revealed by scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). Decreased amounts of Ti and Al and increased amounts of Si and Ca at the dissolution boundary prove that inclusion dissolution and slag penetration simultaneously occur. SiO₂ diffuses or penetrates the inclusion more quickly than CaO, as indicated by the w(CaO)/w(SiO₂) value in the reaction region. A liquid product (containing 0.7–1.2 w(CaO)/w(SiO₂), 15wt%–20wt% Al₂O₃, and 5wt%–15wt% TiO₂) forms on the inclusion surface when Al₂TiO₅ is dissolved in the slag. Al₂TiO₅ initially dissolves faster than the diffusion rate of the liquid product toward the bulk slag. With increasing reaction time, the boundary reaches its largest distance, the Al₂TiO₅ dissolution rate equals the liquid product diffusion rate, and the dissolution process remains stable until the inclusion is completely dissolved.     

Preparation of In<Subscript>2</Subscript>S<Subscript>3</Subscript> and Cu-Doped In<Subscript>2</Subscript>S<Subscript>3</Subscript> 2D Ultrathin Nanoflakes with Tunable Absorption and Intense Photocurrent Response

We reported an effective method to synthesize In₂S₃ and Cu-doped In₂S₃ two-dimensional ultrathin nanoflakes by the hydrothermal method through tuning the Cu/In molar ratio. The transmission electron microscope images showed that the products had ultrathin flake-like shape with wrinkling and rolling. The X-ray diffraction patterns indicated the crystal phase of nanoflakes was varied from β-In₂S₃ to tetragonal-CuInS₂ as the Cu/In molar ratio was increased. The In₂S₃ nanoflakes exhibited absorption band at 450 nm, while new absorption peaks in turn appeared at 550 nm and 670 nm as the Cu/In molar ratio was increased. In addition, the two-dimensional ultrathin nanoflakes exhibited intense photocurrent response.     

Influence of post-annealing on the properties of Ta-doped In<Subscript>2</Subscript>O<Subscript>3</Subscript> transparent conductive films

Ta-doped In₂O₃ transparent conductive oxide films were deposited on glass substrates using radio-frequency (RF) sputtering at 300°C. The influence of post-annealing on the structural, morphologic, electrical and optical properties of the films was investigated using X-ray diffraction, field emission scanning electron microscopy, Hall measurements and optical transmission spectroscopy. The obtained films were polycrystalline with a cubic structure and were preferentially oriented in the (222) crystallographic direction. The lowest resistivity, 5.1×10⁻⁴ Ω cm, was obtained in the film annealed at 500°C, which is half of that of the un-annealed film (9.9×10⁻⁴ Ω cm). The average optical transmittance of the films was over 90%. The optical bandgap was found to decrease with increasing annealing temperature.     

ZnS薄膜的电沉积及表征

利用恒电位电沉积技术实现在ITO导电玻璃上沉积ZnS薄膜,用X射线粉末衍射、扫描电镜、原子力显微镜和X射线光电子能谱对制得的薄膜进行了研究.实验表明,用该方法制得的薄膜样品的主要成分是α-ZnS,薄膜表面均匀、致密和平整,平均粗糙度为3.112 nm,颗粒的粒径大约为50~100 nm.该薄膜中Zn原子和S原子化合价分别为+2价和-2价,原子个数比接近于1∶1,没有探测到单质元素(Zn或S)沉积.     

Intense laser induced field ionization of C<Subscript>2</Subscript>H<Subscript>2</Subscript>, C<Subscript>2</Subscript>H<Subscript>4</Subscript>, and C<Subscript>2</Subscript>H<Subscript>6</Subscript>

Using HOMO Field Ionization Model, the tunneling probabilities and the theoretical threshold intensities of the field ionizations of acetylene, ethylene, and ethane in intense laser field are calculated. C2H2, C2H4, and C2H6 were irradiated by 800 nm, 100 fs laser pulses with the intensity range of 10^13-10^14 W/cm^2. A TOF-mass spectrometer was coupled to the laser system and used to experimentally investigate the field ionization of these molecules. The experimental ionization threshold intensities are obtained. The calculating results of the three molecules agree well with the experimental results, indicating that HOMO Field Ionization Model is valid for the ionization of polyatomic molecules in intense laser field.     

CuInSe<Subscript>2</Subscript> thin films obtained by pulse-plating electrodeposition technique with novel pulse wave

CuInSe₂ films were electrodeposited onto indium tin oxide (ITO) substrate in constant current mode using bell-like wave modulated square wave in aqueous solution. The films obtained at different pulse frequencies were characterized by scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). UV-Vis-NIR absorption spectro- scopy was used to study the optical properties of these films. The results showed that the chalcopyrite phase CuInSe₂ films with a smooth surface and stoichiometric composition could be obtained at appropriate pulse frequency. The crystallinity of CuInSe₂ films could be further improved after annealing treatment. Despite this, we also found that the films obtained using the pulse-plating electrodeposition technique had a faster deposition rate and better film adhesion ability than that using the traditional CIS elec-trodeposition technique, which is significant to the low-cost CIS thin film solar cell production.     

Synthesis and characterization of wormhole-like mesoporous Ce0.6Zr0.35Y0.05O2 solid solutions

Nanoparticles of Ce0.6Zr0.35Y0.05O2 (CZY) solid solution have been prepared by the CTAB (hexadecyl-trimethyl ammonium bromide), CTAB-EG (ethylene glycol) templating, and CTAB-EG-NaCl (in which the pores of the precursor synthesized by the CTAB-EG method is filled by a certain amount of NaCl) method, respectively. The physical properties of these materials were characterized by means of tech-niques such as X-ray diffraction (XRD), high resolution scanning electron microscopy (HRSEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED), and N2 adsorp-tion-desorption measurements. The CZY samples synthesized by the above three methods display wormhole-like mesoporous morphology and cubic crystal structures. The materials are narrow in pore size distribution (averaged pore diameter = 5.3―7.1 nm), high in surface areas (95―119 m2/g), and large in pore volumes (0.16―0.18 cm3/g). It has been demonstrated that the introduction of NaCl is capable of retaining the pore structures of solid nanomaterials at high-temperature calcination.     

Synthesis and modification of well-ordered layered cathode oxide LiNi<Subscript>2/3</Subscript>Mn<Subscript>1/3</Subscript>O<Subscript>2</Subscript>

Oxalic-acid-based co-precipitation method was employed to prepare LiNi_2/3Mn_1/3O₂ sample with a high-ordered structure. Li⁺, Ni²⁺ and Mn²⁺ acetates were used as starting materials. The influence of the amount of lithium source in the starting materials on Li⁺ content, disorder of Li⁺-Ni²⁺ ions, and electrochemical performance has been investigated. Rietveld refinement shows that the sample prepared with 20% excess Li-source in the starting materials exhibits a perfect ordered structure. A specific discharge capacity is as high as 172 mAh/g at C/20 in the voltage range of 4.35–2.7 V. However, the cyclability is not satisfactory: about 25.3% fade in capacity was observed over 50 cycles. Chemically stable SiO2 was coated on the surface of LiNi_2/3Mn_1/3O₂ particles. A significant improvement in cyclability was attained with 3 wt% SiO2 coating, which is ascribable to the protection of LiNi_2/3Mn_1/3O₂ particles from being dissolved into the electrolyte.     

Doping effect on thermoelectric properties of nonstoichiometric AgSbTe<Subscript>2</Subscript> compounds

Nonstoichiometric ternary thermoelectric materials Ag_0.84Sb_1.15M_0.01Te_2.16 (M=Ce, Yb, Cu) were prepared by a direct melt-quench and hot press process. The carrier concentration of all the samples increased after doping. Thermoelectric properties, namely electrical conductivity, Seebeck coefficient, and thermal conductivity, were measured from 300 to 673 K. The phase transition occurring at about 418 K representing the phase transition from β-Ag₂Te to α-Ag₂Te influenced the electrical transport properties. The electrical conductivities of Ce and Yb doped samples increased after doping from 1.9×10⁴ to 2.5×10⁴ and 2.3×10⁴ S·m⁻¹, respectively, at 673 K. Also, at room temperature, the Seebeck coefficient of the Ce doped sample relatively increased corresponding to the high carrier concentration due to the changes in the band structure. However, all the thermal conductivities increased after doping at low temperature. Because of the higher thermal conductivity, the dimensionless figure of merit ZT of these doped samples has not been improved.