成分对CoCr薄膜磁畴影响的研究

对Cr含量为0-23 at％的不同成分系列的CoCr合金薄膜磁畴的研究表明,随着Cr成分增多时其磁各向异性和相关的磁畴结构都敏感地变化。当Cr含量少于17at％时,面内磁化强度为主,并有多种结构形式。超过Cr含量11.2 at％后,少量的垂直磁化强度点畴出现,并随Cr含量增多而增多。Cr含量在17-23 at％的范围内可获得垂直磁各向异性为主的CoCr膜,也可能得到用于高密度垂直磁记录的优良薄膜磁性能。显微照片显示了点畴的尺寸比膜表面的晶粒的或膜断面的晶柱的尺寸都大些。因此,可以得出结论,即其一个自发磁化强度点畴是由一束晶柱或长成的晶粒组成,并都处在单畴状态。     

钴、锰掺杂氧化锌薄膜的制备和特性研究

在200～500℃的衬底温度范围内,用电子束蒸镀法在Si衬底上制备了沿[002]取向的Zn0.80Co0.15Mn0.05O薄膜。这些薄膜都具有室温铁磁性,薄膜磁性随衬底温度的增大,在400℃出现极大值。X射线分析则表明,除200℃制备的薄膜结晶和取向较差外,其它温度的薄膜都沿C轴高度取向,(002)面间距和衍射峰半高宽(FWHM)接近相等。讨论了衬底温度对薄膜晶体结构和磁性的影响。     

不同衬底温度下Tb/Fe/Dy纳米多层膜超磁致伸缩性能研究

采用多靶磁控溅射仪在室温和衬底温度为300 ℃的条件下制备Tb/Fe/Dy纳米多层膜,研究其磁性能和超磁致伸缩性能.结果表明该纳米多层膜较TbDyFe单层膜有更明显的垂直磁各向异性和更大的矫顽力.尽管纳米多层膜样品具有垂直各向异性,但仍具有超磁致伸缩性能.特别是衬底温度为300 ℃的纳米多层膜样品,具有Laves相结构的TbDyFe纳米晶体析出,使得低磁场下磁致伸缩性能有了显著的提高.     

Mg0.1Zn0.9O薄膜制备和光学性能研究

采用溶胶-凝胶技术在石英衬底上制备了Mg0.1Zn0.9O薄膜并研究了退火温度对薄膜结构、形貌和光学性能的影响.XRD结果表明,所有薄膜均呈六角钎锌矿结构,当退火温度高于700℃时,薄膜结晶质量变差;AFM结果显示,随退火温度升高,晶粒尺寸增大,当退火温度高于700℃时,薄膜表面出现团聚颗粒;UV-Vis结果表明,所有薄膜均在紫外区存在较强带边吸收,随退火温度升高吸收边红移;PL谱显示,所有薄膜均存在较强的紫外发射峰,随着退火温度升高,紫外发射峰逐渐红移且在700℃退火处理下紫外发射最强.     

电子束蒸发制备的ZnS薄膜的物相结构和光学性能

用电子束蒸发法在不同衬底温度下制备了厚度为100nm左右的ZnS薄膜,利用X射线衍射(XRD)、紫外—可见光分光光度计(UV-vis Spectrophotometer)研究了ZnS薄膜的晶体结构、光学性能,分析了衬底温度对ZnS薄膜结构与光学特性的影响.结果表明:不同衬底温度下制备的ZnS薄膜均具有闪锌矿结构(111)面择优取向生长的特征;衬底温度为200℃时制备的ZnS薄膜的(111)晶面衍射峰最强,半高宽最小,晶粒最大;制备的ZnS薄膜对可见光有良好的透过性,由于量子尺寸效应,电子束蒸发制备的ZnS薄膜光学带隙大于ZnS粉末的带隙.     

CoCr的选择蒸镀和垂直磁化膜的研究

用电子束蒸镀CoCr制备垂直磁化膜时发现膜成分受众多因素影响,而成为CoCr膜实现垂直磁化的首要问题。选择蒸发是造成成分控制困难的主要原因。本文对有关问题进行了研究,分析计算了理论公式,与实验作了比较,结果符合得很好;对选择蒸发及其对各种制膜工艺的影响;及CoCr膜垂直磁化性能;膜的微观结构和磁畴,都进行了研究和必要的讨论。     

Structure, magnetic properties and giant magnetostriction studies in [Tb/Fe/Dy] n nano-multilayer film

[Tb/Fe/Dy]_n nano-multilayer films, with precise composition of Tb_0.27Dy_0.73Fe₂, were prepared by the multi-targets magnetron sputtering technique at room temperature (sample A) and 300℃ substrate temperature (sample B). Both of the nano-multilayer films show columnar structures perpendicular to the film plane according to the scanning electron microscopy results. The magnetic hysteresis loops and the giant magnetostriction (GMS) property of the two samples indicate the perpendicular anisotropy in them. In spite of the perpendicular anisotropy, both of the samples present GMS effect. In a very low applied field of 0.18 T, the GMS value in sample B is 89.3 ppm, which is about four times of that in sample A, 23.5 ppm. The good low-field GMS effect in sample B might attribute to the Laves phase of R-Fe₂ segregated from the amorphous matrix under the thermal annealing of the substrate. The relation between the magnetization process and GMS property of the perpendicular anisotropy nano-multilayer films is further investigated.     

磁性超晶格的静磁能和磁相图的唯像理论研究

计算了包含不同自旋取向的单畴粒子具有短程交换相互作用能,各向异性能及长程偶极相互作用能的磁性超晶格的静磁能,利用能面图和局域能量极小模型得到了磁相图和磁滞回线,研究了有限尺寸和温度效应,计算结果较好解释了在超薄磁性薄膜中观察到的两种磁相（磁化强度平行和垂直于薄膜平面）的转变行为。     

W离子注入VO2薄膜结构及红外发射性能研究

探讨了低剂量离子注入技术对VO₂薄膜的结构和红外发射性能的影响,发现1×1015 cm?2注量的W离子注入掺杂时,会对VO₂薄膜的晶体结构产生一定的损伤;经400 ℃退火处理后部分恢复了薄膜的单斜相晶体结构,且退火处理后,在掺杂W离子、结构缺陷和氧空位的共同作用下,掺杂量0.12%即可使VO₂薄膜的相变温度降低8.9 ℃;掺杂原子数量每增加1%,其相变温度相应变化74.2 ℃;W离子注入并经退火处理后,VO₂薄膜的红外发射率为0.35～0.46,其在低温区间的红外发射率相比未注入薄膜降低了0.14,这大幅度提高了VO₂薄膜在低温区的红外隐身性能．      

磁控溅射法制备Half-Heusler化合物半导体TiCoSb薄膜

设计一种特别的TiCoSb复合靶材, 通过调节各元素在复合靶材上所占面积的大小, 可以方便地调节薄膜的成分. 采用这种靶材, 利用直流磁控溅射和快速退火成功制备单一物相的多晶TiCoSb薄膜; 采用X射线衍射(X-ray diffraction, XRD)和原子力显微镜(atomic force microscopy, AFM)分析TiCoSb薄膜的结构和表面形貌; 利用Hall测试仪初步研究薄膜的电学性质. 结果表明, 所制备的TiCoSb薄膜对石英玻璃衬底具有良好的粘附力, 薄膜均匀致密. 经600 ºC, 5 min退火的TiCoSb薄膜的结晶质量较好, 薄膜的室温电导率为13.7 S/cm.     

Stabilization of Leidenfrost vapour layer by textured superhydrophobic surfaces

In 1756, Leidenfrost observed that water drops skittered on a sufficiently hot skillet, owing to levitation by an evaporative vapour film. Such films are stable only when the hot surface is above a critical temperature, and are a central phenomenon in boiling. In this so-called Leidenfrost regime, the low thermal conductivity of the vapour layer inhibits heat transfer between the hot surface and the liquid. When the temperature of the cooling surface drops below the critical temperature, the vapour film collapses and the system enters a nucleate-boiling regime, which can result in vapour explosions that are particularly detrimental in certain contexts, such as in nuclear power plants. The presence of these vapour films can also reduce liquid-solid drag. Here we show how vapour film collapse can be completely suppressed at textured superhydrophobic surfaces. At a smooth hydrophobic surface, the vapour film still collapses on cooling, albeit at a reduced critical temperature, and the system switches explosively to nucleate boiling. In contrast, at textured, superhydrophobic surfaces, the vapour layer gradually relaxes until the surface is completely cooled, without exhibiting a nucleate-boiling phase. This result demonstrates that topological texture on superhydrophobic materials is critical in stabilizing the vapour layer and thus in controlling--by heat transfer--the liquid-gas phase transition at hot surfaces. This concept can potentially be applied to control other phase transitions, such as ice or frost formation, and to the design of low-drag surfaces at which the vapour phase is stabilized in the grooves of textures without heating.     

Influence of annealing temperature on structure and photocatalytic activity of TiO2 thin films prepared by DC reactive magnetron sputtering method

Transparent TiO₂ thin films were successfully prepared on high purity silica substrates by DC reactive magnetron sputtering method and annealed at different temperatures. The effects of the annealing temperature （300-600 ℃） on crystalline structure, morphology, and photocatalytic activity of the TiO₂ thin films were discussed. The photocatalytic activity of the films was evaluated by photodegradation of methylene blue solution. With increasing annealing temperature, the photocatalytic activity of the TiO₂ thin films gradually increased because of the improvement of crystallization of anatase TiO₂ thin films. At 500 ℃, the TiO₂ thin film shows the highest photocatalytic activity due to the improvement of crystallization of anatase TiO₂ thin films. When the annealing temperature increases to 600 ℃, the photocatalytic activity of thin film decreases owing to the formation of rutile phase and the decrease of surface area.     

Fe3N纳米晶薄膜退火过程的结构演变及其磁性

采用直流磁控溅射方法, 在氮气分压为10%的条件下获得了单相纳米晶ε-Fe₃N磁性薄膜, 先将薄膜样品在真空中分别于500,600,700,800 ℃退火, 再利用X射线衍射(XRD)和振动样品磁强计(VSM)表征不同退火温度样品的结构和磁学性能. 结果表明: ε-Fe₃N样品在小于600 ℃可保持结构稳定; 在退火过程中, ε-Fe₃N薄膜的比饱和磁化强度变化较小; 矫顽力先减小后增加; 经过500 ℃退火的ε-Fe₃N样品软磁性能最佳.     

Influence of size effect and boundary conditions on temperature overshooting in nanoscale thermal conduction

The temperature overshooting phenomenon in one-dimensional nanoscale heat conduction in thin films is studied for various boundary conditions.The results show that when ballistic heat transport strongly affects the heat transport process,temperature overshooting is more likely to occur.A sudden increase of temperature on only one surface of a thin film cannot trigger temperature overshooting,while symmetric boundary temperature perturbations lead to the largest temperature overshooting.Twodimensional heat conduction is also studied in a nanoscale area.The analytic results show that Fourier’s law may severely underestimate the temperatures in nanofilms as well as in nanoareas when temperature overshooting occurs.     

烘烤温度对LaNiO_3薄膜微结构与电学性能的影响

采用sol-gel技术在单晶Si(100)衬底上制备了LaNiO3导电薄膜.利用X射线粉末衍射、原子力显微镜、扫描电子显微镜和四探针电阻测量法研究了不同烘烤温度对LaNiO3薄膜的晶体结构、表面形貌和导电性能的影响.结果表明,LaNiO3薄膜均为赝立方钙钛矿结构,表面致密、均匀,衬底与薄膜间界面清晰.烘烤温度为210℃时,薄膜具有最好的<110>择优取向性.烘烤温度在210℃的薄膜具有最低的电阻率,达到10-4Ω.cm数量级,导电性能最好.     

钙钛矿La0.67Pb0.33MnO3薄膜的制备及表征

利用磁控溅射法在单晶LaAlO3(100)衬底上成功的外延生长了La0.67Pb0.33MnO3薄膜。用X射线衍射、原子力和超导量子干涉仪、振动样品磁强计对其进行了表征。结果表明,薄膜为赝立方钙钛矿结构,晶胞参数为a=3.861 nm,具有良好的单晶外延结构和光滑的表面。居里温度TC=345 K,在居里温度附近,发生铁磁-顺磁转变。此材料呈现出一种典型的自旋玻璃特性,是由于应力造成的。在室温条件下,当H=0.8T时,磁电阻效应非常明显,此现象是由于固有磁电阻效应引起的,并不是低场磁电阻效应引起的。室温下,其矫顽力只有50奥斯特。     

二维磁性Heisenberg薄膜的自旋重取向和条形畴研究

利用Monte Carlo方法研究了二维磁性Heisenberg薄膜在有交换相互作用、各向异性、偶极相互作用等因素共同作用下的相变行为,重点讨论了薄膜的自旋重取向和磁畴的变化.模拟结果表明:在一定的参数范围内,随着温度的升高,系统的自旋取向将由垂直向平行于平面方向转变;系统在不同情况下出现了水平条形畴和垂直条形畴,并研究了交换相互作用、各向异性及温度对基态条形畴的影响.     

沉积温度对NbN膜层微观结构的影响

利用有磁过滤器的等离子体沉积装置,在不同温度的Si基底上沉积氮化铌（NbN）薄膜,通过XRD,XPS,SEM等分析,研究了NbN薄的表面表貌与微观结构跟温度的关系,发现沉积温度对掺优取向有较强的影响：从室温到约300℃得到的薄膜在（220）峰表现出很强的择优取向,500℃（220）峰变得很弱,（200）峰表现出择优取向,但不明显,同时,膜层中N和Nb的原子比先随温度的升高而升高,后稍有降低,温度升高,δ-NbN的晶粒变大,室温到300℃很难得到完整的NbN膜,而在500℃得以的薄膜完整且光滑,膜层中得到单一的δ-NbN相。     

自旋1/2铁电膜表面和平均磁化强度的理论计算

利用在层内采用Bethe Peierls近似、层间采用平均场近似的方法,计算了6个原子层和20个原子层构成的自旋1/2铁电膜的磁化强度·发现在不同的表面耦合强度下,薄膜的表面磁化和平均磁化有明显的不同,表面耦合强度小,表面磁化弱于整体磁化,否则表面磁化强于整体磁化,但薄膜的表面和整体具有相同的转变温度·对于较厚的薄膜,系统的整体磁化受表面耦合强度影响小,但在转变温度附近,强的表面耦合强度会带动薄膜的整体磁化·横向场抑制薄膜的自发磁化·     

(001)取向FePt薄膜的有序化过程及磁性

在加热到400°C的MgO(001)单晶基片上,用磁控溅射法沉积了25 nm厚的FePt薄膜,在Ta=[500°C,800°C]温度范围进行5 h的热处理.用X射线衍射仪、振动样品磁强计和可外加磁场的磁力显微镜分析了薄膜的结构和磁性.结果表明,未经热处理的薄膜能够在MgO(001)单晶基片的诱导下实现(001)取向生长,但仍处于无序的A1相,呈软磁性.Ta=500°C,薄膜结构没有明显改变.Ta=600°C,FePt发生部分有序化,薄膜中A1相和L10相(有序相)共存,形成一种具有磁各向异性的特殊硬磁-软磁复合体.软磁相的磁性主要表现在沿平行于膜面方向施加磁场的磁化曲线中,但矫顽力可以达到10 kOe(1Oe=103/4πA m-1),硬磁相的磁性主要表现在沿垂直于膜面方向施加磁场的磁化曲线中,矫顽力却只有5kOe.这说明薄膜中硬磁相和软磁相之间存在强烈的交换耦合,形成了磁性弹簧.当Ta提高到700°C,薄膜基本完成有序化,磁化易轴彻底转向垂直于膜面的方向,矫顽力大于20 kOe.原子力显微镜和磁力显微镜观察表明,薄膜由岛状颗粒构成,在Ta=700°C时大部分颗粒内部形成多磁畴结构,在不太大的磁场作用下依靠畴壁移动和消失变为单磁畴,磁化反转过程应该主要依靠形核.