二维方柱光子晶体的波导特性

具有缺陷的光子晶体,光子频率带隙内将出现局域模,而线缺陷相应地形成一个传输效率很高的光波导.计算了空气中Al材料的旋转四边形直柱光子晶体存在线缺陷时的带结构和态密度,给出了二维方形光子晶体的波导的TM模的电场分布,并讨论了波导耦合的传输效率.     

Controlling the dynamics of spontaneous emission from quantum dots by photonic crystals

Control of spontaneously emitted light lies at the heart of quantum optics. It is essential for diverse applications ranging from miniature lasers and light-emitting diodes, to single-photon sources for quantum information, and to solar energy harvesting. To explore such new quantum optics applications, a suitably tailored dielectric environment is required in which the vacuum fluctuations that control spontaneous emission can be manipulated. Photonic crystals provide such an environment: they strongly modify the vacuum fluctuations, causing the decay of emitted light to be accelerated or slowed down, to reveal unusual statistics, or to be completely inhibited in the ideal case of a photonic bandgap. Here we study spontaneous emission from semiconductor quantum dots embedded in inverse opal photonic crystals. We show that the spectral distribution and time-dependent decay of light emitted from excitons confined in the quantum dots are controlled by the host photonic crystal. Modified emission is observed over large frequency bandwidths of 10%, orders of magnitude larger than reported for resonant optical microcavities. Both inhibited and enhanced decay rates are observed depending on the optical emission frequency, and they are controlled by the crystals' lattice parameter. Our experimental results provide a basis for all-solid-state dynamic control of optical quantum systems.     

分析TE模式入射角对光子晶体禁带特性的影响

利用光学传输矩阵方法,分析了TE模式光波的入射角度分别与禁带宽度、光子带隙起始波长的关系,通过优化计算得到了一系列特殊带隙结构的光子晶体,揭示了光子晶体的带隙变化规律,对不同禁带范围的要求选取恰当参数来制备所需要的光子晶体提供了理论依据。     

二维六边形晶格光子晶体的带隙研究

运用平面波展开法模拟计算了二维六边形晶格光子晶体的能带结构,得到了使光子带隙最大化的结构参数.分别以不同介质作为本底,由圆柱、正方直柱和六角形直柱空气孔构成的六边形晶格光子晶体都出现了完全光子带隙,为进一步光子晶体的实验制备和应用提供了理论依据.     

新型一维线性函数光子晶体电场分布

研究一维线性函数光子晶体的透射特性,分析不同周期数和光学厚度对电场分布的影响,得到一些不同于常规光子晶体结论,当介质层B和A折射率分布函数为线性增加时,线性函数光子晶体透射率可以远大于1;随着周期数N的增加,其电场强度最大值明显增加,通过改变周期数N就能改变光在函数光子晶体中的电场强度的放大倍数.该结论为光子晶体的制备和应用提供了理论方法和思路.     

二维内嵌结构式光子晶体带隙特性研究

针对正方晶格光子晶体因带隙特性较差而使其应用受到一定限制的问题, 设计一种新型内嵌结构式二维光子晶体, 即在普通正方晶格光子晶体内部嵌入同类晶格的光子晶体。同时对介质柱型和空气孔型光子晶体分别进行了仿真实验。结果表明, 采用内嵌结构式光子晶体后, 无论是介质柱型还是空气孔型光子晶体, 都较普通正方晶格光子晶体的带隙条数增加2～10条, 带隙率也均有了显著提升。该方法是进一步寻求完全禁带正方晶格光子晶体结构的有效方法。     

A three-dimensional optical photonic crystal with designed point defects

Photonic crystals offer unprecedented opportunities for miniaturization and integration of optical devices. They also exhibit a variety of new physical phenomena, including suppression or enhancement of spontaneous emission, low-threshold lasing, and quantum information processing. Various techniques for the fabrication of three-dimensional (3D) photonic crystals--such as silicon micromachining, wafer fusion bonding, holographic lithography, self-assembly, angled-etching, micromanipulation, glancing-angle deposition and auto-cloning--have been proposed and demonstrated with different levels of success. However, a critical step towards the fabrication of functional 3D devices, that is, the incorporation of microcavities or waveguides in a controllable way, has not been achieved at optical wavelengths. Here we present the fabrication of 3D photonic crystals that are particularly suited for optical device integration using a lithographic layer-by-layer approach. Point-defect microcavities are introduced during the fabrication process and optical measurements show they have resonant signatures around telecommunications wavelengths (1.3-1.5 microm). Measurements of reflectance and transmittance at near-infrared are in good agreement with numerical simulations.     

一维光子晶体中的几率密度和拓扑相

用光量子理论给出一维光子晶体(AB)^N中光子的几率密度、几率流密度和Zak相, 当介质B的折射率n_b=1.12时, 用量子方法计算出三条带的Zak相. 结果表明:  当入射角θ和周期数N改变时, 光子晶体的几率密度和几率流密度近似为周期变化, 且其振幅随入射角θ和周期数N的增加而增大; 当入射光的频率与透射率T=100%相对应时, 几率密度的振幅最大, 当入射光的频率与透射率T=0相对应时, 几率密度不为零, 但几率密度的振幅迅速衰减到零, 即光子晶体中存在光子的量子隧道效应.     

光子晶体及其应用研究

对光子晶体的性质和应用,如光局域化或光子晶体波导,甚至于是沿着一个很尖锐的弯曲的光子晶体波导能力,以及光子晶体激光器,进行了讨论.在这一技术领域,有许多基础方面的特点被认为是正确的,但却没有给出严格的证明.这是由于下列两方面的原因,第一是这个新领域发展的非常迅速,第二是由于在光子晶体中分析电磁波是很困难的,除了使用计算机去得到定量结果外,没有别的选择.板型的光子晶体(带有一个周期性空洞系统的高折射率板片),对高集成的光电路器件来说,也许是最佳结构.     

光子晶体在卡塞格伦光学天线中的应用

光子晶体是一种介电常数在空间周期变化的人造晶体,其最基本的特征是具有光子禁带,是一种新兴的光学材料,其优异的光学特性适应了光学天线发展的需求。文中在介绍了光子晶体的结构、特性及其主要的理论研究方法的基础上,针对光学天线小型化的趋势,介绍了光子晶体的带隙特性给光学天线在分束、滤波、准直方面性能改善提供的便利,最后着重阐述了光子晶体器件在卡塞格伦光学天线中的应用。     

介质阻挡放电中一维等离子体光子晶体及其带隙特性

在双水电极大气压氩气介质阻挡放电中获得了一维可调等离子体光子晶体.通过类似于量子力学Kronig-Penney模型求解周期势的方法,求解Maxwell方程得到了一维等离子光子晶体的色散关系.结合实验数据,理论模拟了晶格常数、等离子体与介质的厚度比、电子密度等不同参数对等离子体光子晶体带隙的影响.结果表明:等离子体光子晶体晶格常数的增大导致能级位置降低,相速度减小;在相同的晶格常数下,等离子体填充比增大时,带隙位置将略有上升且光子带隙数目增加;当电子密度大于1020 m-3时,等离子体光子晶体具有显著禁带宽度.     

Large-scale synthesis of a silicon photonic crystal with a complete three-dimensional bandgap near 1.5 micrometres

Photonic technology, using light instead of electrons as the information carrier, is increasingly replacing electronics in communication and information management systems. Microscopic light manipulation, for this purpose, is achievable through photonic bandgap materials, a special class of photonic crystals in which three-dimensional, periodic dielectric constant variations controllably prohibit electromagnetic propagation throughout a specified frequency band. This can result in the localization of photons, thus providing a mechanism for controlling and inhibiting spontaneous light emission that can be exploited for photonic device fabrication. In fact, carefully engineered line defects could act as waveguides connecting photonic devices in all-optical microchips, and infiltration of the photonic material with suitable liquid crystals might produce photonic bandgap structures (and hence light-flow patterns) fully tunable by an externally applied voltage. However, the realization of this technology requires a strategy for the efficient synthesis of high-quality, large-scale photonic crystals with photonic bandgaps at micrometre and sub-micrometre wavelengths, and with rationally designed line and point defects for optical circuitry. Here we describe single crystals of silicon inverse opal with a complete three-dimensional photonic bandgap centred on 1.46 microm, produced by growing silicon inside the voids of an opal template of dose-packed silica spheres that are connected by small 'necks' formed during sintering, followed by removal of the silica template. The synthesis method is simple and inexpensive, yielding photonic crystals of pure silicon that are easily integrated with existing silicon-based microelectronics.     

一类高品质因子大透过率二维光子晶体微腔

利用多重散射法数值模拟了多个具有五个缺陷点的氧化铝介质柱四方晶格二维光子晶体微腔的透过率T和品质因子Q. 结果表明,沿x、y方向介质柱的个数Lx、Ly以及介质柱半径r对微腔品质因子和透过率均有明显影响. 通过优化参数,实现了一类具有大透过率T、高品质因子Q的微腔. 在模拟范围内,当Lx=13、Ly=17和r=0.25时,微腔品质因子和透过率同时达到较大值,分别为49 270和91%.     

On-chip natural assembly of silicon photonic bandgap crystals.

Photonic bandgap crystals can reflect light for any direction of propagation in specific wavelength ranges. This property, which can be used to confine, manipulate and guide photons, should allow the creation of all-optical integrated circuits. To achieve this goal, conventional semiconductor nanofabrication techniques have been adapted to make photonic crystals. A potentially simpler and cheaper approach for creating three-dimensional periodic structures is the natural assembly of colloidal microspheres. However, this approach yields irregular, polycrystalline photonic crystals that are difficult to incorporate into a device. More importantly, it leads to many structural defects that can destroy the photonic bandgap. Here we show that by assembling a thin layer of colloidal spheres on a silicon substrate, we can obtain planar, single-crystalline silicon photonic crystals that have defect densities sufficiently low that the bandgap survives. As expected from theory, we observe unity reflectance in two crystalline directions of our photonic crystals around a wavelength of 1.3 micrometres. We also show that additional fabrication steps, intentional doping and patterning, can be performed, so demonstrating the potential for specific device applications.     

正入射时二维空气孔结构正方形和三角形光子晶体的带隙结构

 利用平面波展开法推导出光在光子晶体中传播时的本征方程及其矩阵表达形式,数值求解了圆形空气孔结构的正方形光子晶体和三角形结构光子晶体的色散曲线,给出了不同空气孔结构下的色散曲线。计算分析发现,在<11>方向上,二维正方形结构的光子晶体E波的第一带隙与H波的第一带隙完全分开。在<10>方向上,E波的第一带隙比H波略窄,两者的变化趋势也不尽相同。对E波来说,第一带隙随着空气孔径的增大而增宽;但对H波来说,第一带隙先增宽再变窄。与正方形结构光子晶体不同的是,二维三角形结构光子晶体在<11>方向的第一带隙边缘位置并不在M（1,1）点,而是出现在（0.5,0.5）点,其中心频率比<10>方向的小,但其带隙宽度较正方形结构的大。在<10>方向上,E波的第一带隙比H波的略宽,且两者的变化趋势完全相反。对E波来说,第一带隙先增宽再变窄;但对H波来说,第一带隙随着空气孔径的增大而增宽。     

多光楔板制作大面积光折变光子微结构

提出了一种制作大面积光子微结构的简便方法,利用多光楔板产生大面积的多光束干涉,在光折变晶体中制作出了大面积的周期性光子微结构和准周期性的光子准晶微结构。该方法简便易行,系统稳定性好,无须复杂的调节装置,制作效率高。使用导波强度图像、远场衍射图样、布里渊区光谱成像等方法对制作的大面积光子微结构进行了验证和分析。设计不同的多光楔板,可以制作出多种更复杂的大面积光子微结构。通过适当的处理,制作的大面积光子微结构可以长久地固定在光折变晶体中,也可以擦除后用于制作新的结构,这在集成光学和微纳光子器件领域具有良好的应用前景。     

等效折射率模型分析二维光子晶体微谐振腔模态

 采用数值计算方法,利用等效折射率模型研究不同折射率材料制造的二维光子晶体微谐振腔的模态。发现可以通过增加薄膜厚度达到良好的光子局域化。讨论了薄膜层材料折射率分别为n=3.42,2.50,1.80,1.60,薄膜层厚度分别对应为0.1529,0.2182,0.3341,0.4003μm,其等效折射率分别对应于2.81,2.23,1.52,1.38时,达到良好光子局域,说明介质材料与空气折射率差值小的光子晶体微谐振腔结构若要有好的光子局限能力,除了需要靠介质材料本身的全反射效应外,还需有足够厚的膜层厚度。从而找到一个能控制光场分布同时维持单模振荡的机制,揭示微谐振腔体薄膜层厚度对模态影响,为实际研制具有高质量微谐振腔提供了一种较好的预估手段。     

正方空气柱结构二维三角晶格光子晶体及其禁带特征

基于平面波展开法比较研究了空气圆柱三角晶格光子晶体和正方介质柱三角晶格光子晶体的禁带特征,提出了正方空气柱三角晶格光子晶体结构,并分析了相对介电常数对其禁带宽度的影响.结果表明:空气圆柱三角晶格光子晶体要比由同种介质材料构成的正方介质柱三角晶格光子晶体的完全禁带要大得多;对于正方空气柱三角晶格光子晶体,当相对介电常数εr>12.0时将出现双禁带,且当εr=19.0时两条禁带均达到最大值.     

含有缺陷的二维光子晶体能带特性

为进一步研究有缺陷光子晶体的能带特性，并以此作为光子晶体器件的设计理论依据，利用倒易空间的概念，得到了正方晶格的最小布里渊区的分布、采用时域有限差分加Bloch边界方法得到了二维光子晶体的能带特性．结合超元胞的方法计算了含有点缺陷和线缺陷的光子晶体的特性，并且得到了缺陷模式的场分布，通过对能带特性的分析，将对光子晶体的研究从量子阱结构发展到了量子点结构．     

三角晶格光子晶体第一带隙特性研究

光子晶体的带隙特性对于电磁传输器件设计具有重要意义.基于电磁波传输理论,应用MATLAB数值模拟了五种半导体材料SIC、Si、Ge、InSb和HgTe构成二维圆柱三角晶格光子晶体TM模第一带隙特性,研究得到不同填充率条件下,介电常数较大的可形成较宽带隙,第一带隙上下边界频率都上移,第一代带隙宽度也随着填充率的增加而增加.研究结论为光子晶体器件制作提供参考.