Structural, electrical, dielectric and magnetic properties of Mn-Nd substituted CoFeO3 nano sized multiferroics

A series of Mn x Co_(1-x) Fe_(1-y) Nd_yO_3(where x=0.0–1.0 y=0.0–0.1) multiferroic nanocrystals was synthesized via sol-gel auto-combustion technique. The structure was confirmed by X-ray diffraction(XRD)while morphology was investigated by scanning electron microscopy(SEM). The electrical resistivity was observed to increase from 2.14 * 10~7 to 8.77 * 10~9 Ω-cm and activation energy was found to increase from 0.64 to 0.75 e V, while the drift mobility decreased from 4.75 * 10~(-13) to 1.27 * 10~(-15)cm~2V~(-1)S~(-1) by the substitution of Mn and Nd contents. The dielectric constant, dielectric loss and dielectric loss factor decrease with frequency and Mn-Nd contents. The saturation magnetization was increased from 34 to 70 emu g~(-1) while the coercivity decreased from 705 to 262 Oe with the increase of substituents.The increase in electrical resistivity and saturation magnetization while decrease in dielectric parameters and coercivity make these nanomaterials suitable for applications in microwave devices and longitudinal magnetic recording media.     

单晶钛酸铅纳米棒的可控水热合成研究

以不同浓度的聚乙烯醇(PVA)和聚丙烯酸(PAA)作为添加剂,利用水热合成法成功制备出具有不同直径的钛酸铅纳米棒.X射线衍射(XRD)结果表明纳米棒为四方相纯钙钛矿结构.透射电子显微镜(TEM)研究表明,随着PVA浓度的升高,纳米棒的直径变小,长度变短,纳米棒在产物中所占比例提高;当在反应物中同时加入少量的PVA和PAA时,能合成直径近乎高浓度PVA作用下的纳米棒.高分辨透射电子显微镜(HRTEM)分析表明纳米棒为单晶结构,且纳米棒主要沿着[100]方向生长.     

Dielectric properties, electrical modulus and current transport mechanisms of Au/ZnO/n-Si structures

Au/Zn O/n-Si(MIS)structures were fabricated by using the RF sputtering method and their complex dielectric constant(ε~*=ε’-jε’’),electric modulus(M~*=M′+j M’’)and electrical conductivity(σ=σ_(dc)+σ_(ac))values were investigated as a function of frequency(0.7 k Hz-1 MHz)and voltage(-6–(+6 V))by capacitance-voltage(C-V)and conductance-voltage(G/ω-V)measurements to get more information on the conduction mechanisms and formation of barrier height between Au and n-Si.The lnσ-Lnf plots have two different regions corresponding to low-intermediate and high frequencies.Such behavior of lnσ-lnf plots shows that the existence of two different conduction mechanisms(CMs)at low-intermediate and high frequencies.Moreover,the reverse bias saturation current(I_o),ideality factor(n),barrier height(Φ_(Bo))were determined from the forward bias I-V data and they were found as a strong function of temperature.The value of n especially at low temperature is considerably higher than unity.The values ofΦ_(B0)and standard deviation(σ_s)were found from the intercept and slope ofΦ_(Bo)-q/2k T plots as 0.551 e V and 0.075 V for the region I(80–220 K)and 1.126 e V and 0.053 V for the region II(220–400 K),respectively.The values ofΦ_(Bo)and effective Richardson constant(A~*)were found from slope and intercept of activation energy plots as 0.564 e V and 101.084 Acm~(-2)K~(-2)for the region I and 1.136 e V and41.87 Acm~(-2)K~(-2)for the region II,respectively.These results confirm that the current-voltage-temperature(I-V-T)characteristics of the fabricated Au/Zn O/n-Si SBDs can satisfactorily be explained on the basis of TE theory with double GD of the BHs.     

Ferroelectric, dielectric, and optical properties of Nd-substituted Bi4Ti3O12 nanoparticles synthesized by sol-gel method

This paper reports the synthesis of neodymium substituted bismuth titanate nanoparticles(BNdT) for ferroelectric random access memory(Fe RAM) based applications using sol-gel route. X-ray diffraction pattern showed that the BNdT nanoparticles exhibited perovskite structure with orthorhombic phase. The microstructure of the BNdT nanoparticles showed that the grains were in spherical structure with a bi-modal distribution of spheres. Dielectric constant and dielectric loss of BNdT nanoparticles were measured in the frequency range 100 Hz to 100 kHz. Nd-substituted BNdT nanoparticles showed the high remanent polarization(P_r=33.2 μC/cm~2, Ec=62.5 kV/cm) than pure bismuth titanate(BT)(P_r=14.6 μC/cm~2, Ec=182.8 kV/cm) ideal for FeRAM based applications. The occurrence of red shift in photoluminescence(PL) spectrum is considered to be due to the isomerisation that may occur from the heating of samples.     

Large-scale synthesis of nickel sulfide micro/nanorods via a hydrothermal process

Rhombohedral-phase NiS micro/nanorods were synthesized on a large scale through a hydrothermal method using NiCl₂·6H₂O and thiourea crystals as starting precursors. Recrystallized thiourea was observed to play an important role in the formation of micro/nanosized rods and flower-like structures. The molar ratio and reaction temperature of the precursors influenced the morphology and phase of NiS products. Pure rhombohedral NiS micro/nanorods were obtained on a large scale when the molar ratio between NiCl₂·6H₂O and thiourea crystals was fixed at 2:1, and the mixture was heated at 250℃ for 5 h. Flower-like NiS nanostructures were formed when the molar ratio between NiCl₂·6H₂O and thiourea crystals was maintained at 1:1. The Raman and Fourier-transform infrared (FTIR) spectra of the as-prepared rhombohedral NiS micro/nanorods were collected, and their magnetic properties were investigated. The results showed that the FTIR absorption peaks of the as-prepared product are located at 634 cm-1 and their Raman peaks are located at 216 and 289 cm-1; the as-prepared NiS micro/nanorods exhibited weak ferromagnetic behavior due to the size effect.     

良好结晶VO2(A)纳米杆的相变、电学和光转变特性

在VO2-草酸体系中,利用一步水热合成法制备结晶良好的VO2(A)纳米杆.成品的结构和尺寸分别通过X射线衍射(XRD)、扫描电镜(SEM)和透射电子显微镜(TEM)表征.差示扫描量热(DSC)曲线显示在加热过程中VO2的相转变温度为167.8 ℃.变温X射线衍射(XRD)图谱显示加热时VO2(A)在160~180 ℃发生相变.温度升高到450 K时,磁化率突然增加.使用4探针法测量VO2(A)样品的电阻率,滞后现象显示VO2(A)的相变为1级相变.根据阿仑尼乌斯曲线,得出低温VO2(AL)和高温VO2(AH)的活化能分别为0.39 eV和0.37 eV.变温红外光谱显示VO2(A)纳米杆在红外区域具有良好的光学转换特性,此特性与VO2(A)的可逆结构转变有关.研究结果表明VO2 (A)纳米材料可应用于红外开关装置.     

硫化铋纳米棒的制备及性能研究

采用水热法以Bi(NO3)3.5H2O为铋源、CH3CSNH2为硫源、尿素为矿化剂在丙三醇与水的混合溶剂中合成较小尺寸的Bi2S3纳米棒,采用X射线粉末衍射(XRD)、扫描电子显微镜(SEM)、高分辨透射电子显微镜(HRTEM)、紫外-可见分光光度计(UV-Vis-NIR)、荧光分光光度计(PL)等对样品进行检测表征.结果表明:制备的Bi2S3为纯相正交结构,形貌和尺寸受到S与Bi的比例、溶剂种类、反应温度和反应时间等因素影响.通过控制不同的条件可得到形貌均一的纳米棒.并对小尺寸Bi2S3纳米棒的光学性能及生长过程进行了初步讨论.     

Ag纳米颗粒修饰对La掺杂ZnO纳米棒光催化性能的影响

采用水热法和光沉积制备Ag纳米颗粒修饰的La掺杂ZnO纳米棒,并通过光催化降解甲基橙(MO)溶液,考查了La掺杂浓度和Ag修饰对ZnO纳米棒光催化性能的影响.结果表明:La掺杂和Ag修饰能够提高ZnO纳米棒的光催化性能.La掺杂改变了ZnO纳米棒的结晶质量,La—O键的形成使ZnO晶体的本征吸收边红移且吸收强度增加,同...     

Effect of La and Co-doping on microstructure and electrical properties of Bi FeO_3 thin films

Adding both La3＋and Co3＋was used to tune the microstructure and electrical properties of Bi Fe O3（BFO） thin films, and Bi1-xLaxFe0.90Co0.10O3 thin films were grown on the Sr Ru O3-buffered Pt-coated silicon substrates by a radio frequency sputtering. A polycrystalline structure with（110） orientation was shown in thin films, and their resistivity dramatically increases as the La3＋content increases. Their dielectric constant increases,and dielectric loss decreases with increasing La3＋content.In addition, their ferroelectric and fatigue properties were enhanced with rising La3＋content. The thin films with x = 0.03 have optimum electrical properties（e.g., remanent polarization 2Pr＊ 175.6 l C/cm2, coercive field2Ec＊ 699.5 k V/mm, dielectric constant er＊ 257 and tan d ＊ 0.038）, together with a good fatigue behavior. The impendence analysis of the films was conducted to identify the defects type during conductivity, and both hopping electrons and single-charged oxygen vacancies are mainly responsible for the conduction of grain and grain boundaries regardless of La3＋content. As a result, the doping with both La3＋and Co3＋benefits the improvement in the electrical properties of BFO thin films.     

溶胶-凝胶-水热法制备Na0.5Bi0.5TiO3单晶纳米棒的研究

采用溶胶-凝胶-水热法在一定条件下合成单晶Na0.5Bi0.5TiO3纳米棒.该方法能够很好地控制产物的组分,避免高温晶化过程中Na或Bi离子的挥发.利用XRD、SEM、TEM和紫外/可见吸收光谱等分别对产物的物相、形貌、微结构以及光吸收等性质进行表征.结果表明获得的产物为三方相钙钛矿结构,NBT纳米棒与NBT粗晶材料...     

The influence of probe lift-up height on CNT electrical properties measurement under EFM DC mode

Nowadays, one of the bottlenecks which hinder the development and application of carbon nanotube （CNT） nano device is that no pure semiconducting CNT （s-CNT） or metallic CNT （m-CNT） can be obtained, and for solving this problem scientists proposed some methods on preparation or separation, but all the results still should be detected and feedback to the process for further improving the preparation and separation methods. Thus, it is very important to measure and distinguish the electrical properties of CNT. For that, scientists proposed a method to measure CNT electrical properties based on DC elec- trostatic force microscope （EFM） mode, which distin- guishes m-CNT from s-CNT according to different scan line shape to CNT with different electrical properties. But, we discovered that the probe lift-up height will seriously affect the shape of the scan line, which makes this method not reliable in distinguishing m-CNT from s-CNT. In this paper, the authors deeply researched the influence of probe lift-up height and also gave corresponding theoretical analysis and explanation, which will greatly improve the method of detecting CNT electrical properties by EFM.     

钡钛酸盐玻璃的形成、性质和结构

本文目的在于研制高二氧化钛含量玻璃。当二氧化钛与氧化钡含量达80%时(其中TiO_2含量为30—60%),可以形成稳定的玻璃。这种玻璃具有高折射率(~nD>2.1)与良好的化学稳定性。文中还对高钛玻璃的着色进行了研究,认为主要由于熔制过程中失氧所引起。因此,可以通过熔制条件的控制、热处理等途径大大减轻玻璃的着色,从而能提高玻璃的反射率。通过红外光谱与X-射线谱对玻璃中的Ti~(4 )离子的配位状态作了分析,证明Ti~(4 )离子处于[TiO_(?)]状态。电镜观察确定,高钛酸盐玻璃在T_g以上一定温度热处理时,首先产生分相,然后体积晶化。对所析出的晶相也进行了研究,证实一般由钛酸钡为主的钛酸盐所组成。根据研究结果,提出了钡钛酸盐玻璃的结构示意图。     

酸性水热合成 CeO2纳米颗粒的光学和磁学性质

以CeCl3·7H2 O为铈源、NH3· H2 O为矿化剂、HCl为酸性调节剂,利用水热法成功制备了二氧化铈纳米颗粒．采用X射线衍射仪（XRD）、扫描电子显微镜（SEM ）、紫外‐可见分光光度计（UV‐Vis）、荧光分光光度计（PL ）、拉曼光谱（Raman）和振动样品磁强计（VSM ）等分析测试手段,对CeO2纳米颗粒的晶相、形貌、光学和磁学性质进行了表征．XRD测试结果表明样品的晶格参数略高于块状CeO2的,并随着pH值的增大而减小．所有样品的形貌均为球形．从紫外‐可见吸收光谱中,估计出的样品直接带隙值小于块状CeO2的,且此值随pH值的增加而增加．pH值为2时合成样品具有室温铁磁性,此性质的出现可能与Ce3＋和氧空位的存在有关．     

溶胶-凝胶法制备BiFeO3多铁性薄膜及其电磁性能研究

采用溶胶-凝胶法在SiO2/Si基底上制备纯相BiFeO3多铁性薄膜.利用X射线衍射仪对不同退火温度的薄膜样品进行晶体结构的测定和分析,结果表明：样品为钙钛矿结构,并呈随机取向.在室温下测量500℃退火样品的电滞回线及其不同频率下的介电常数和介电损耗;当外加电场达到14×107 V/m时,剩余极化强度（Pr）和饱和极化强度（Ps）分别为10.12μC/cm2和14.62μC/cm2;当频率范围在1kHz～1MHz时,样品的介电常数和介电损耗基本稳定,且损耗较小.此外,在室温下测量薄膜的磁性能,M-H曲线表明样品具有铁磁性.     

Effects of SrTiO3 buffer layer on structural and electrical properties of Bi3.15Nd0.85Ti3O12 thin films prepared by a chemical method

Ferroelectric Bi3.15Nd0.85Ti3O12 (BNT) thin films have been grown on Pt/Ti/SiO2/Si substrates at 750 ℃ by a chemical solution deposition method using SrTiO3 (STO) as a buffer layer.The influence of STO...     

等离子体化学气相沉积工艺调控铜基-石墨烯复合薄膜材料微结构及电学热学性能研究

本文利用等离子体化学气相沉积PECVD(Plasma-Enhanced Chemical Vapor Deposition)技术制备了铜基-石墨烯复合薄膜,通过X射线衍射及Raman光谱证实了低温合成的可行性.同时,逐步研究压强、功率、气流量、基底温度等关键参数对沉积速率的影响,实现了对薄膜材料厚度和生长过程的准确控制.进一步研究发现,H₂与CH₄的气体比例严重影响了等离子体与基底表面的相互作用,并导致了材料表面微观结构和粗糙度的协同改变.通过工艺参数和气体配比的优化,实现了对薄膜表面结构的有效调节.当H₂/CH₄为1∶12时,薄膜的粗糙度最低,电子与声子的散射源被充分抑制,电导率和热导率分别达到8.3×10⁶ S/cm与158 W/m·K,表明该材料具有良好的导电性及优秀的散热效果.本文系统优化PECVD生产过程中的各项关键工艺参数,并详细分析了气体配比、表面结构、粗糙度及薄膜宏观物性之间的关联,为铜基-石墨烯复合薄膜的工业化生产和商业化应用提供了理论支撑和实验依据.     

BaTiO3纳米粉体及其陶瓷的制备和介电性能

采用溶胶-凝胶(Sol-gel)法制备BaTiO3纳米粉体及其陶瓷.通过XRD、SEM和TEM对BaTiO3粉体及其陶瓷进行了表征,并测试了陶瓷的介电性能.研究了预烧温度和烧结温度对BaTiO3粉体及其陶瓷微观结构和介电性能的影响.结果表明:950℃预烧2 h的BaTiO3粉体主要为四方相,其尺寸为60 nm左右,经1 300℃烧结2 h的BaTiO3陶瓷具有高的介电常数(10 820)和小的介电损耗(0.01).     

矿井直流电透视方法技术研究

利用三维有限元计算方法对矿井直流电透视的七种装置形式进行正演模拟。计算结果表明，矿井直流电透视法属于体积勘探，但不同的测量方式对应不同的电场分布特性，能突出探测目的层(煤层内或顶底板岩层)内的异常特征，为采煤工作面内的具体地质问题选用相应的装置形式提供了理论依据。     

Ag/graphene composite based on high-quality graphene with high electrical and mechanical properties

A simple and effective process has been reported to prepare the silver (Ag)/graphene composite with excellent mechanical and electrical properties based on high-quality graphene (HQG). The HQG was fabricated via hot pressing of reduced graphene oxide (RGO) from chemical exfoliation, while the Ag/HQG composite was obtained by using spark plasma sintering (SPS) treatment under high temperature (1500 °C) and moderate pressure (40 MPa). With low oxygen-containing functional groups and defect density, the HQG dispersed homogeneously in the composite after high-energy ball milling. In comparison to pure Ag, the as-prepared Ag/RGO composite exhibited a great enhancement of 11% electrical conductivity and 42% micro-hardness with an optimal RGO adding content (1 wt%). The Ag/HQG composite is expected to open up a new way for the novel Ag-based electrical contact materials, and further to broaden its applications in micro-electronics and switching power.