Electrical and band-gap properties of amorphous zinc-indium-tin oxide thin films

Zinc-indium-tin oxide (ZITO) films were grown by pulsed-laser deposition.Three different material compositions were investigated:ZITO-30,ZITO-50 and ZITO-70 in which 30％,50％ and 70％,respectively,of the...     

Electrical and band-gap properties of amorphous zinc–ind ium–tin oxide thin films

Zinc–indium–tin oxide (ZITO) films were grown by pulsed-laser deposition. Three different material compositions were investigated: ZITO-30, ZITO-50 and ZITO-70 in which 30%,50% and 70%, respectively, of the indium in the In2O3 structure was replaced by substitution with zinc and tin in equal molar proportions (co-substitution): In22xZnxSnxO3, where x=0.3, 0.5, 0.7. All ZITO films grown at room temperature were amorphous. The first evidence of crystallinity was observed at higher deposition-temperature as the degree of co-substitution was increased. A decrease in mobility and conductivity was also observed as the degree of co-substitution was increased. The highest mobility for ZITO-30 and ZITO-50 was observed at deposition temperatures just prior to crystallization. The effect of deposition temperature on carrier concentration was minor compared to the effect of oxygen partial pressure during deposition.     

Pulsed laser deposited Al-doped ZnO thin films for optical applications

Highly transparent and conducting Al-doped Zn O(Al:Zn O) thin films were grown on glass substrates using pulsed laser deposition technique.The profound effect of film thickness on the structural, optical and electrical properties of Al:Zn O thin films was observed. The X-ray diffraction depicts c-axis, plane(002) oriented thin films with hexagonal wurtzite crystal structure. Al-doping in Zn O introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:Zn O thin films are important for applications such as transparent electromagnetic interference(EMI) shielding materials and solar cells. The obtained optical band gap(3.2–3.08 e V) was found to be less than pure Zn O(3.37 e V) films. The lowering in the band gap in Al:Zn O thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:Zn O thin films for light emitting devices(LEDs) applications. The current–voltage(I–V) measurements show the ohmic behavior of the films with resistivity(ρ) 10-3Ω cm.     

Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering

Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400 ℃ ）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T are amorphous at the temperature ranging from 1, the crystalline seeds appear at T1 = 300℃, and the films 27 ℃ to 400 ℃.     

High-energy ion treatments of amorphous As40Se60 thin films for optical applic ations

The treatment of 100 MeV Ag swift-heavy ion(SHI) irradiation with five different fluences(3 1010, 1 1011, 3 1011, 1 1012, and3 1012ions/cm2) was used to design optical and structural properties of amorphous(a-) As40Se60 chalcogenide thin films. Swanepoel method was applied on transmission measurements to determine the changes in optical bandgap, Tauc parameter and linear optical parameters, i.e., linear optical absorption, extinction coefficient and linear refractive index. Dispersion of the material was determined by Wemple–DiDomenico relation.Changes in nonlinear optical parameters of third-order optical susceptibility and nonlinear refractive index were determined using semi-empirical relations. Changes in surface morphology of the films were investigated using SEM observation, which indicated that fluence 3 1012ions/cm2was upper threshold limit for these films for ion treatment. It is observed that optical bandgap reduces from 1.76 eV to 1.64 eV, and nonlinear refractive index increases from 1.31 10 10[esu] to 1.74 10 10[esu]. Linear refractive index initially increases from 2.80 to 3.52(for fluence3 1010ions/cm2) and then keeps decreasing. The observed changes in optical properties upon irradiation were explained in terms of structural rearrangements by Raman measurement. The study was compiled with the previous literature to propose SHI as an effective optical engineering technique to achieve desired changes according to the need of optical/photonic applications.     

Facile cathodic electrosynthesis and characterization of iron oxide nano-particles

Fe2O3 nano-particles have been synthesized by simple cathodic electrodeposition from the low-temperature nitrate bath.The morphology and crystal structure of the obtained oxide powder were analyzed by means of scanning and transmission microscopy(SEM and TEM),X-ray diffraction(XRD) and Fourier transform infrared(FTIR) spectroscopy.Thermal behavior and phase transformation during the heat treatment of as-deposited sample were investigated by differential scanning calorimetry(DSC) and thermogramimetric analysis(TGA).The results showed that the deposited Fe2O3 was composed of the nanoparticles with grain size of approximately 10-60 nm.A serious problem during cathodic electrodeposition of iron oxide was splashing of deposit into electrolyte due to its low adhesion.This problem was tackled by reducing the bath temperature and dielectric constant of solvent.     

退火温度对TiO2薄膜光学性能的影响

为确定合适的TiO2薄膜退火工艺,研究了退火温度对采用中频交流反应磁控溅射技术制备的TiO2薄膜光学性能的影响.利用分光光度计测得石英玻璃基体TiO2薄膜试样的透射谱和反射谱,用包络线法和经验公式法计算出薄膜的光学常数.结果表明 TiO2薄膜的折射率随退火温度的上升而增加,低温退火时薄膜消光系数略有减小, 500 ℃退火时TiO2薄膜具有最优的光学性能.     

Photore sponse and H2 gas sensing properti es of highly oriented Al and Al/Sb doped ZnO thin films

ZnO:Al and ZnO:Al/Sb thin films have been prepared and investigated.The thin films were deposited on Si substrates by the sol-gel method.The structural,optical and electrical properties of ZnO films have been investigated by spectrophotometry,ellipsometry,X-ray diffraction and current-voltage characterizations.It is found that the films exhibit wurtzite structure with a highly c-axis orientation perpendicular to the surface of the substrate,a high reflectivity in the infrared region and a response to illumination.Furthermore,it has been found that Si/（ZnO:Al/Sb）/Al photodiode is promising in photoconduction device while Si/（ZnO:Al）/Al can be used as gas sensor responding to the low H₂concentrations.     

烧结氧化铁电极的阻抗谱研究

本文通过测量耗尽层电容,确定了N型和P型两种电极在碱性溶液中的平带电势及导带和价带位置,得出了一个详细的能级图,并利用N型和P型两种电极构成了一个光化学电池,即可得到光解水的目的.     

用RF—PECVD制备的SnO2薄膜光电性质及化学成分

利用ＸＰＳ研究了ＲＦ－ＰＥＣＶＤ制备ＳｎＯ２薄膜的化学计量配比，测试了ＳｎＯ２薄膜的光学和电加热特性。结果表明：具有导电性能的ＳｎＯ２薄膜是一种非理想化学计量配比的氧化物半导体薄膜材料，薄膜还具有较高的可见光透过率和较好的电加热性能。     

温度梯度铁电薄膜的极化偏移特性研究

采用平均场近似下的横场伊辛模型理论,同时考虑了遂穿频率与温度的相互关系,重点研究了BaTiO3温度梯度铁电薄膜的极化偏移特性.研究表明:量子起伏效应对于温度梯度铁电薄膜的性质有重要的影响,在低温区量子起伏效应尤其显著；温度梯度的存在导致了薄膜内部的极化强度的梯度分布；对于下温度梯度铁电薄膜来说,当量子起伏效应达到足够强时,可以改变极化梯度和极化偏移的方向.     

Controlled properties of perovskite oxide films by engineering oxygen octahedral rotation

Complex perovskite oxides exhibit extremely rich physical properties in terms of magnetism, electrical transport, and electrical polarization characteristics due to the competition and coupling of many degrees of freedom. The B-site ions and O ions in perovskite form six-coordinated octahedral units, which are connected at a common vertex toward the basic framework of the perovskite oxide, providing a crucial platform to tailor physical properties. The rotation or distortion of the oxygen octahedra will tip the competing balance, leading to many emergent ground states. To further clarify the subtle relationship between emergent properties and oxide octahedral behavior, this article reviews the structure of perovskite oxides, the characterization methods of oxygen octahedral rotation and the response of transport, electrical polarization and magnetism of several typical perovskite heterostructures to oxygen octahedral rotation modes. With knowledge of how to manipulate the octahedral rotation behavior and regulate the physical properties of perovskite oxides, rationally designing the sample manufacturing process can effectively guide the development and application of novel electronic functional materials and devices.     

退火对非晶态碲镉汞薄膜稳定态光电导的影响

利用射频磁控溅射方法,在宝石衬底上制备了非晶态碲镉汞(a-HgCdTe)薄膜。对原生a-HgCdTe薄膜进行了不同退火时间和不同退火温度的热退火,在80～300K温度范围内,分别测量了原生和退火处理后的a-HgCdTe薄膜样品的稳定态光电导,研究了退火时间和退火温度对非晶态HgCdTe薄膜的稳定态光电导和激活能的影响。结果表明,原生和退火a-HgCdTe薄膜的稳定态光电导具有热激活特性;随着退火时间增加或退火温度升高,a-HgCdTe薄膜的晶化程度提高,导致光电导增大,光电导激活能降低。利用非晶-多晶转变机制讨论了实验结果。     

共沉淀法制备高比表面积的铟锡氧化物超细粉末

采用化学共沉淀法制备铟锡氧化物超细粉末, 并用差热分析仪测定铟锡氧化物前驱体的分解温度、用X射线衍射分析其晶型, 用透射电镜观察颗粒的大小和形貌, 用自动吸附仪测量颗粒的比表面积;对分散剂的添加及添加方式、煅烧温度等因素对产品性能的影响也进行研究. 研究结果表明: 在抽滤洗涤共沉淀凝胶时用Na2SiO3做分散剂润洗, 然后在700 ℃下煅烧2 h, 可以得到粒度为20～30 nm、比表面积达150 m2/g、分布均匀、结晶性好的铟锡氧化物超细粉末.     

光化学沉积法制备掺杂TiO2薄膜

采用光化学沉积法在玻璃上制备了锐钛矿型TiO2和金属铁、铬离子掺杂TiO2薄膜,并采用XRD,SEM,XPS表征了所合成的薄膜.结果表明,掺杂铁离子的TiO2薄膜表面呈现出颗粒状纹路,掺杂铬离子的TiO2薄膜表面呈现网格状纹路.TiO2薄膜的亲水性能随着金属离子的加入而增加.铁离子的加入对TiO2薄膜催化降解甲基橙的能力有所促进,而铬离子的加入对TiO2薄膜催化降解甲基橙的能力没有显著提高.     

氮化铁薄膜的结构及磁性研究

采用直流磁控溅射方法，以Ar／N2作为放电气体在玻璃基片上沉积了单相γFe4N薄膜，采用X射线衍射（XRD）和超导量子干涉仪（SQUID）对所制备的样品进行了结构和磁性性能分析，研究了基片温度对薄膜的结构和磁性性能的影响。     

透明导电氧化物薄膜的制备方法研究

主要介绍了制备透明导电氧化物薄膜的方法,其中包括磁控溅射法、脉冲激光沉积法（PLD）、喷涂热解法、分子束外延法（MBE）、溶胶-凝胶技术（sol-gel）法,总结了各种方法的优缺点,并对透明导电氧化物薄膜的研究进行了展望。     

采用不同功率溅射制备氧化钛薄膜的研究

常温下,利用射频（RF）反应磁控溅射方法在K9双面抛光玻璃基底上沉积氧化钛薄膜．采用光栅光谱仪对薄膜样品的透射谱进行测试,通过椭圆偏振光谱仪测试并拟合得到薄膜的厚度、折射率和消光系数等光学参数,借助掠入射角X-射线衍射对薄膜的结晶状态进行了测试．实验结果表明：不同溅射功率下沉积的样品呈非晶态,在40～100W范围内,溅射功率越大,薄膜的沉积速率越大,但溅射功率对折射率和消光系数影响不大．     

衬底温度对ZnCoCuO蒸镀膜结构和性能的影响

用X射线衍射方法分析了在Si(001)衬底上电子束蒸镀制备的Zn0.84Co0.15Cu0.01O薄膜的结构特征,测量了薄膜的磁性质,研究了衬底温度对薄膜晶体结构及磁性能的影响。实验发现,衬底温度在350～500℃的范围内,薄膜都具有室温铁磁性,而且在(002)晶面取向有极大值,饱和磁化强度和剩磁随衬底温度增加近于单调减小。     

铝合金外壳阳极氧化层缺陷分析

利用扫描电镜及能谱仪对相机外壳阳极氧化膜缺陷进行分析,发现该铝合金外壳在进行阳极化处理前就存在凹陷缺陷,该凹陷缺陷是在轧制过程中产生的"条痕"缺陷,以及在"条痕"之间存在的夹渣,它们改变了缺陷处的阳极化条件,造成缺陷处阳极氧化反应时形成一定方向的银色和黑色相间的流线型条纹。