| 基于光敏玻璃的垂直互连通孔仿真与电镀工艺研究 |
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| 引用本文： | 林来存,王启东,邱德龙,伍恒,薛恺,于大全,曹立强. 基于光敏玻璃的垂直互连通孔仿真与电镀工艺研究[J]. 北京理工大学学报, 2018, 38(1): 52-57. DOI: 10.15918/j.tbit1001-0645.2018.01.009 |
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| 作者姓名： | 林来存 王启东 邱德龙 伍恒 薛恺 于大全 曹立强 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029;华进半导体封装先导技术研发中心有限公司,江苏,无锡24135 |
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| 基金项目： | 国家重大专项基金资助项目（2013ZX02502） |
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| 摘 要： | 本文对玻璃通孔与硅通孔垂直互连结构进行了电磁场仿真，并对比了两者的高频传输特性，结果显示在20GHz处，玻璃通孔与硅通孔的插入损耗分别为-0.024dB和-1.62dB，玻璃通孔的高频传输性能明显优于硅通孔.基于光敏玻璃衬底，采用高刻蚀速率的湿法腐蚀方法，获得了深宽比为7:1的玻璃通孔，孔阵列均匀性良好，侧壁粗糙度小于1μm.对不同电流密度下的玻璃通孔填充工艺进行了仿真分析，结果显示在小电流密度下，开口处的电流密度拥挤效应改善明显，铜层生长速度更为均匀，但沉积速度较慢.基于仿真结果，进行了电流密度为1ASD下的通孔填充实验研究，结果显示填充效果良好，120μm的TGV中铜层生长均匀，70μm的TGV中的缝隙较小.
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| 关 键 词： | 转接板技术 光敏玻璃 玻璃通孔 电流密度 填充工艺 |
| 收稿时间： | 2016-04-29 |
Formation and Metallization Process Study on High Aspect Ratio Through-Glass-Via (TGV) Within Photosensitive Glass |
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| LIN Lai-cun,WANG Qi-dong,QIU De-long,WU Heng,XUE Kai,YU Da-quan and CAO Li-qiang. Formation and Metallization Process Study on High Aspect Ratio Through-Glass-Via (TGV) Within Photosensitive Glass[J]. Journal of Beijing Institute of Technology(Natural Science Edition), 2018, 38(1): 52-57. DOI: 10.15918/j.tbit1001-0645.2018.01.009 |
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| Authors: | LIN Lai-cun WANG Qi-dong QIU De-long WU Heng XUE Kai YU Da-quan CAO Li-qiang |
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| Affiliation: | 1. Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;2. National Center for Advanced Packaging, Wuxi, Jiangsu 241350, China |
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| Abstract: | The electromagnetic simulations of through glass via (TGV) and through silicon via (TSV) were performed in this paper.Simulated results show that the insertion losses of TGV and TSV at 20 GHz are-0.024 dB and-1.62 dB respectively,representing a much higher performance of TGV.Based on photosensitive glass,7:1 high aspect ratio of TGV was obtained by using high speed wet etching method,achieving better array profile,uniformity and less 1μm roughness of TGVs.Filling process was simulated under different current densities.Results show that smaller current density is helpful to achieve uniform filling due to the improvement of crowding effect of current density at the top and bottom of TGVs,the development speed of copper layer is more uniform and slow.A verification filling experiments were carried out under the current density of 1ASD.Results show a high filling quality,copper layer develops uniformly in 120 μm TGVs,the seams are small in 70 μm TGVs. |
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| Keywords: | interposer technology photosensitive glass through glass via current density filling process |
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