| 用DLTS和ODLTS技术研究ZnSe晶体中与Ga有关的深能级 |
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| 引用本文： | 彭星国, 黄波. 用DLTS和ODLTS技术研究ZnSe晶体中与Ga有关的深能级[J]. 华南师范大学学报（自然科学版）, 1989, (2): 1. |
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| 作者姓名： | 彭星国 黄波 |
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| 作者单位： | 华南师范大学物理系(彭星国)，华南师范大学物理系(黄波) |
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| 摘 要： | 本文应用深能级瞬态谱(DLTS)和光深能级瞬态谱(ODLTS)技术研究了掺Ga的ZnSe晶体中的深能级.发现ZnSe:Ga晶体中有一个与Ga有关的施主能级位于导带底下0.17eV处,两个与Ga有关的受主能级分别位于价带顶上0.65eV和0.72eV处.文中还对这些能级的起源进行了讨论.
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| 关 键 词： | 深能级瞬态谱 光深能级瞬态谱 锌空位 络合体 自激活中心 |
STUDIES ON DEEP TRAPS RELATED TO GALLIUM IN ZnSe CRYSTALS BY DLTS AND ODLTS METHODS |
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| Peng Xingguo Huang Bo. STUDIES ON DEEP TRAPS RELATED TO GALLIUM IN ZnSe CRYSTALS BY DLTS AND ODLTS METHODS[J]. Journal of South China Normal University(Natural Science Edition), 1989, 0(2): 1 |
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| Authors: | Peng Xingguo Huang Bo |
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| Affiliation: | phys. Dept. |
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| Abstract: | Deep traps in Ga-doping ZnSe crystals have been investigated by DLTS and ODLTS methods. It is found that there is a donor trap at 0.17eV from the conduction band and two acceptor traps at 0.65eV and 0.72eV above the valencee band respectively.The donor trap at 0.l7eV is considered as one excitated state level of shallow donor gallfum. The acceptor trap at 0.65eV is the self-activated ( SA ) centre, which is identified as the associate between zinic vaccacy and shallow donor gallium. The 0.72eV acceptor trap is probably due to gallium at Se position heavy Ga-doping. |
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| Keywords: | deep level transient spectroscopy optical deep level transient spectroscopy zinic vaccacy associate self-activated centre |
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