| 静电放电次数与半导体器件潜在性失效的关系 |
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| 引用本文： | 杨洁,刘尚合,刘红兵,祁树锋. 静电放电次数与半导体器件潜在性失效的关系[J]. 河北大学学报(自然科学版), 2007, 27(6): 620-624. DOI: 10.3969/j.issn.1000-1565.2007.06.014 |
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| 作者姓名： | 杨洁 刘尚合 刘红兵 祁树锋 |
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| 作者单位： | 军械工程学院,静电与电磁防护研究所,河北,石家庄,050003;中国电子科技集团公司,第十三研究所,河北,石家庄,050000 |
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| 基金项目： | 国家自然科学基金重点资助项目(50237040)，国家自然科学基金面上资助项目(60671044) |
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| 摘 要： | 为研究硅双极晶体管中由ESD注入引起的潜在性失效与放电次数间的关系,对微波低噪声小功率硅双极器件进行了同一电压不同次数的人体模型ESD注入实验.注入电压为1.50 kV.注入管脚为器件对ESD最敏感的端对.器件分组注入不同次数的ESD后,将注入和未注入过ESD的器件同时进行加速寿命实验.通过比较各组器件损伤率的大小来反映器件使用寿命的变化.经统计分析与计算发现:开始时,随放电次数的增加,器件出现潜在性失效的概率增大,当概率达到一定极限值后,又会随放电次数的增大而减小,说明ESD的注入不仅可能在部分硅器件内部造成潜在性失效,也可能提高另外一部分器件的可靠性.
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| 关 键 词： | 硅双极晶体管 静电放电 潜在性失效 注入次数 微波低噪声小功率 加速寿命实验 |
| 文章编号： | 1000-1565(2007)06-0620-05 |
| 修稿时间： | 2007-08-20 |
Relationship Between ESD Injected Times and Latent Damage in Semi-conductor Transistors |
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| YANG Jie,LIU Shang-he,LIU Hong-bing,QI Shu-feng. Relationship Between ESD Injected Times and Latent Damage in Semi-conductor Transistors[J]. Journal of Hebei University (Natural Science Edition), 2007, 27(6): 620-624. DOI: 10.3969/j.issn.1000-1565.2007.06.014 |
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| Authors: | YANG Jie LIU Shang-he LIU Hong-bing QI Shu-feng |
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| Abstract: | Currently latent damages of electronic devices were widely discussed.In order to research the relationship between ESD injected times and latent damage in silicon dipole transistors,HBM ESD impulses were injected into their most sensitive ports to ESD.High-frequency low-noise small-power Silicon dynatrn transistors 2SC3356 were selected and grouped.The same injected voltage was 1.50 kV,which was close to its threshold,but each group was injected with different times.After injection,all transistors,which were injected or nor injected,were carried on the accelerated life tests at the same time.By statistics,analyses and calculations,it could be found that the latent damage rates increased with the ESD injected times increasing until it was up to a certain value,after that the damage rates decreased with ESD injected times increasing.So it could be concluded that ESD injection might not only cause latent damages inside dynatrons,but also enhance partial transistors' reliabilities. |
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| Keywords: | silicon dipole transistor ESD latent damage injected times microwave low-noise small-power accelerated life test |
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