| 非掺杂气相外延GaAs层中空间电荷散射中心的研究 |
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| 引用本文： | 邵久安,邹元燨,彭瑞伍. 非掺杂气相外延GaAs层中空间电荷散射中心的研究[J]. 应用科学学报, 1986, 4(1): 16-21 |
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| 作者姓名： | 邵久安 邹元燨 彭瑞伍 |
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| 作者单位： | 中国科学院上海冶金研究所 |
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| 摘 要： | 根据室温和77K下电学性质测试数据,计算了非掺杂VPEGaAs材料中空间电荷中心密度与散射截面积的乘积NSOA,然后从NSOA分别与ND及μ300K间的关系,推测空间电荷散射中心是某种SiGS-(O1,V1)型的络合物.结合本工作,为了在AsCl3欠纯的情况下获得适当纯度的外延层,在气相外延系统中装入去硫装置,有效地抑制了硫、硒等杂质,附带发现该装置对碳的去除也有一定效果.
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| 收稿时间： | 1983-08-01 |
A STUDY ON THE SPACE CHARGE SCATTERING CENTERS IN UNDOPED VPE GaAs |
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| SHAO JIUAST,ZHOU YUAKXI,PENG RUIWU. A STUDY ON THE SPACE CHARGE SCATTERING CENTERS IN UNDOPED VPE GaAs[J]. Journal of Applied Sciences, 1986, 4(1): 16-21 |
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| Authors: | SHAO JIUAST ZHOU YUAKXI PENG RUIWU |
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| Affiliation: | Shanghai Institute of Metallurgy, Academia Sinica |
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| Abstract: | In this paper, the product of space charge density and scattering cross section has been calculated from the measured room temperature mobility by the use of Matthiessen's rule. A linear relationship between NSCA and ND has been found. On the basis of this relationship, the space charge center presented in undoped VPE GaAs epilayers is postulated to be a complex of the SiGa (O1, V1) type.Besides, an in site sulpher remover has been designed and used in the AsCl3-Ga-H2 epitaxial system for the first time, and found to be quite effective in depressing the carrier concentration of the epilayers. |
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