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应用科学学报 ›› 1986, Vol. 4 ›› Issue (1): 16-21.

• 论文 • 上一篇    下一篇

非掺杂气相外延GaAs层中空间电荷散射中心的研究

邵久安, 邹元燨, 彭瑞伍   

  1. 中国科学院上海冶金研究所
  • 收稿日期:1983-08-01 出版日期:1986-03-31 发布日期:1986-03-31

A STUDY ON THE SPACE CHARGE SCATTERING CENTERS IN UNDOPED VPE GaAs

SHAO JIUAST, ZHOU YUAKXI, PENG RUIWU   

  1. Shanghai Institute of Metallurgy, Academia Sinica
  • Received:1983-08-01 Online:1986-03-31 Published:1986-03-31

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摘要： 根据室温和77K下电学性质测试数据,计算了非掺杂VPEGaAs材料中空间电荷中心密度与散射截面积的乘积NSOA,然后从NSOA分别与ND及μ300K间的关系,推测空间电荷散射中心是某种SiGS-(O1,V1)型的络合物.
结合本工作,为了在AsCl3欠纯的情况下获得适当纯度的外延层,在气相外延系统中装入去硫装置,有效地抑制了硫、硒等杂质,附带发现该装置对碳的去除也有一定效果.

Abstract: In this paper, the product of space charge density and scattering cross section has been calculated from the measured room temperature mobility by the use of Matthiessen's rule. A linear relationship between NSCA and ND has been found. On the basis of this relationship, the space charge center presented in undoped VPE GaAs epilayers is postulated to be a complex of the SiGa (O1, V1) type.
Besides, an in site sulpher remover has been designed and used in the AsCl3-Ga-H2 epitaxial system for the first time, and found to be quite effective in depressing the carrier concentration of the epilayers.