| 激光扫描光电显微镜 |
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| 引用本文： | 张淑仪,陈力,徐建生. 激光扫描光电显微镜[J]. 应用科学学报, 1987, 5(1): 16-21 |
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| 作者姓名： | 张淑仪 陈力 徐建生 |
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| 作者单位： | 南京大学 |
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| 摘 要： | 本文报道了利用半导体材料和器件光电导效应研制成功的一种新型成象检测系统——光电显微镜.并用该显微镜对几种MOS功率管和TTL集成电路进行了静态和动态检测,其结果说明光电显微镜不但可用来检测各种集成电路(包括大规模集成电路)的静态缺陷,更重要的是可用于探查器件在工作情况下的逻辑状态、电荷分布及失效分析等,从而为分析集成电路提供一种非接触式、非破坏性、能用于常温常压的方便有效的检测方法.
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| 收稿时间： | 1985-10-15 |
| 修稿时间： | 1986-01-12 |
LASER SCANNING PHOTOELECTRIC MICROSCOPE |
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| ZHANG SHXIYI,CHEN LI,XU JIANSHENG. LASER SCANNING PHOTOELECTRIC MICROSCOPE[J]. Journal of Applied Sciences, 1987, 5(1): 16-21 |
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| Authors: | ZHANG SHXIYI CHEN LI XU JIANSHENG |
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| Affiliation: | Nanjing University |
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| Abstract: | Using the photoelectrie effect of semiconductors (materials and devices), a new imaging detection system, photoelectric microscope, has been established. Some static and dynamic photoelectric imagings of several integrated circuits have been obtained by the microscope. Thee results show that the photoelectric microscope can be used not only to detect the static defects of various integrated circuits (including large scale integrated circuits), but also to search the logic levels and charges distributions in integrated circuits. It provides a convenient and effective, non-contacting and nondestructive technique that can be used in normal atmospheric circumstances for integrated circuits failure analysis. |
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