| PTCDA/p-Si异质结势垒的形成及电流传输机理分析 |
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| 引用本文： | 张福甲,王德明.PTCDA/p-Si异质结势垒的形成及电流传输机理分析[J].甘肃科学学报,2000,12(1):1-5. |
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| 作者姓名： | 张福甲 王德明 |
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| 作者单位： | 兰州大学物理系,甘肃,兰州,730000 |
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| 基金项目： | 国家自然科学基金资助项目!(编号 6 96 76 0 10 ) |
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| 摘 要： | 根据有机半导体材料 PTCDA与无机半导体 p型 Si能够形成同型异质结PTCDA/p- Si,分析讨论了它在正、反向偏压作用下的能带结构及其电流～电压特性。
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| 关 键 词： | PTCDA 异质结 电流输运 能带结构 有机半导体 硅 |
| 修稿时间： | 1999-10-18 |
THE FORMATION OF PTCDA/p-Si HETEROJUNCTION BARRIER POTENTIAL AND THE ANALYSIS OF TRANSMISSION MECHANISM FOR ITS ELECTRIC CURRENT |
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| ZHANG Fu-jia,WANG De-ming.THE FORMATION OF PTCDA/p-Si HETEROJUNCTION BARRIER POTENTIAL AND THE ANALYSIS OF TRANSMISSION MECHANISM FOR ITS ELECTRIC CURRENT[J].Journal of Gansu Sciences,2000,12(1):1-5. |
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| Authors: | ZHANG Fu-jia WANG De-ming |
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| Abstract: | Based on organic semiconductor material and the inorganic semiconductor p \|type Si has been able to forming the homotype heterojunctcon PTCDA/ p \|Si,has been a analyses and discussion on the structure of energy band and the characteristic current~voltage by the action of the forward and inverse voltage. |
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| Keywords: | PTCDA/ p \|Si heterojunction transmission of electric current characteristic |
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