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非晶硅太阳电池中缓变P-I异质结的光、热稳定性的研究
引用本文:陈光华,张仿清,李彦尊.非晶硅太阳电池中缓变P-I异质结的光、热稳定性的研究[J].甘肃科学学报,1990(3).
作者姓名:陈光华  张仿清  李彦尊
作者单位:兰州大学物理系,兰州大学物理系,兰州大学物理系 兰州 730001,兰州 730001,兰州 730001
摘    要:本文通过测量CP—I和GB—I异质结光照前、后以及在不同温度下的I—V和C—V特性,研究了光诱导和热诱导缺陷态对两种结的光稳定性和热稳定性的影响。结果表明,GBP—I结改进了P—I结的界面特性,但都明显地受到强光和高温的影响,使结特性退化。

关 键 词:异质结  非晶硅太阳电池  电流—电压特性  电容—电压特性

LIGHT AND THERMAL STABILITIES OF GRADED P-I HETERO JUNCTION IN a-Si:H SOLAR CELL
Chen Guanghua,Zhang Fangqing and Li Yanzun.LIGHT AND THERMAL STABILITIES OF GRADED P-I HETERO JUNCTION IN a-Si:H SOLAR CELL[J].Journal of Gansu Sciences,1990(3).
Authors:Chen Guanghua  Zhang Fangqing and Li Yanzun
Abstract:The influences of the light and thermal induced defects on the stability of the CP-I (common P-I) and GBP-I (graded bandgap P-I) hetero-juctions were studied by measuring I-V and C-V characteristics before and after light soaking, at different temperatures. The results show that the interface properties of GBP-I hetero junction are improved,but both GBP-I and CP-I hetero junctions are clearly influenced and degraded by light soaking and high temperature.
Keywords:Heterojunction  amorphous silicon solar cell  current-voltage (I-V) charac-teristics  capacitance-voltage (C-V) characteristics    
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