| Zn1-xSrxS:Cu薄膜电致发光特性的研究 |
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| 引用本文： | 段恒勇.Zn1-xSrxS:Cu薄膜电致发光特性的研究[J].哈尔滨师范大学自然科学学报,2004,20(2):41-45. |
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| 作者姓名： | 段恒勇 |
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| 作者单位： | 黑龙江省森工管理干部学院 |
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| 摘 要： | 首先我们制备了结构为：ITO／SiO2／ZnS:Cu／SiO2／Al的薄膜电致发光器件，其电致发光为绿色的宽带发射．然后将发光材料换成Zn1-xSrxS：Cu，制备同样结构的薄膜电致发光器件．结果发现电致发光光谱由原来的550nm单个峰的宽带发射变成了双峰发射．峰值位置分别为430nm和530nm左右，而且随Sr浓度的变化而不同．该体系Cu离子的蓝光发射主要是由于Sr的掺入使ZnS基质的禁带变宽以及蓝色发光中心能级上的电子不易被离化到导带所致．
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| 关 键 词： | 蓝色电致发光 掺杂发光材料 激发光谱 缺陷发光 薄膜电致发光器件 Zn1-xSrxS：Cu薄膜 |
| 修稿时间： | 2004年3月9日 |
THE STUDY OF ELECTROLUMINESCENCE PERFORMANCE THAT THE THIN FILM OF Zn1-xSrxS:Cu |
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| Duan Hengyong.THE STUDY OF ELECTROLUMINESCENCE PERFORMANCE THAT THE THIN FILM OF Zn1-xSrxS:Cu[J].Natural Science Journal of Harbin Normal University,2004,20(2):41-45. |
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| Authors: | Duan Hengyong |
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| Institution: | Heilongjiang Forest Industry Administrative Personnel Training College |
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| Abstract: | Frst of all we made thin film electroluminescent device with structure ITO/SiO 2/ZnS:Cu/SiO 2/Al, its electroluminescence is green wide band emission. Then we change luminescent materials ZnS:Cu into Zn 1-xSr xS:Cu, made thin film electroluminescent device with the same structure. Result we found electroluminescent optical spectrum from original 550 nm wide band emission of single peak value change into split-blip emission. The position of peak value is separately 430 nm and 530 nm around. Furthermore it is variant with the variance of Sr concentration. Blue light emission of Cu ion is mainly as a result of that the mix Sr result in the increasing of the band gap of ZnS base material and it is not easy that electron in blue luminescent center energy level is ionized to conduction band. |
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| Keywords: | Blue electroluminescence Doped luminescent materials Excitation optical spectrum the Zn 1-xSr xS:Cu thin film Luminescent of point defects |
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