| 高压功率VDMOST的SPICE直流模型 |
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| 引用本文： | 赵野,孙伟锋,易扬波,鲍嘉明.高压功率VDMOST的SPICE直流模型[J].应用科学学报,2005,23(6):604-609. |
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| 作者姓名： | 赵野 孙伟锋 易扬波 鲍嘉明 |
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| 作者单位： | 东南大学,国家专用集成电路系统工程技术研究中心,江苏,南京,210096 |
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| 基金项目： | 国家“863”高技术研究发展计划资助项目(2003AA1Z1400) |
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| 摘 要： | 基于高压VDMOST的物理机理和特殊结构,详细分析、推导了漂移区电阻、埋层电阻、内部节点电压及内部耗尽层宽度随外加偏压变化而变化的情形;采用数值计算的方法,建立了较精确的高压六角型VDMOST三维物理模型,进而提出了VDMOST的直流(DC)等效电路模型.该模型由level3 NMOS管、控制源、电容等元件组成,较准确地模拟了高压器件的特性.与以往文献的结果相比,该模型物理概念清晰,准确性高,避免过多工艺参数引入的同时,简化了等效电路.将该模型嵌入SPICE进行仿真,得到了全电压范围内连续的I-V特性曲线,与实际测试结果相比,误差接近5%.
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| 关 键 词： | 模型 高压集成电路 高压VDMOST 漂移区 等效电路 |
| 文章编号： | 0255-8297（2005）06-0604-06 |
| 收稿时间： | 2004-07-18 |
| 修稿时间： | 2004-07-182004-11-12 |
A DC Model of High-Voltage VDMOST for SPICE Simulation |
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| ZHAO Ye,SUN Wei-feng,YI Yang-bo,BAO Jia-ming.A DC Model of High-Voltage VDMOST for SPICE Simulation[J].Journal of Applied Sciences,2005,23(6):604-609. |
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| Authors: | ZHAO Ye SUN Wei-feng YI Yang-bo BAO Jia-ming |
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| Institution: | National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China |
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| Abstract: | An accurate model for high-voltage hexagon VDMOST is derived based on a three-dimensional structure and implemented with SPICE.Drift region resistance,buried layer resistance,interior node voltage and variation of internal capacitance with external applied voltage are analyzed in detailed.A DC equivalent circuit model is also proposed,which includes a level 3 NMOS transistor,a controlled source and capacitance,etc.It also accounts for the quasi-saturation effect in high voltage device.This simple model with a clear physical concept also provides easy extraction of inter-electrode capacitances.The I-V simulation results are in good agreement with experimented results with the DC error approaching 5% within the entire voltage range,which can be used in practical applications. |
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| Keywords: | model HVIC high-voltage VDMOST drift region equivalent circuit |
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