| 双层多晶硅FlotoxEEPROM单元的优化设计 |
| |
| 引用本文： | 于宗光,魏同立.双层多晶硅FlotoxEEPROM单元的优化设计[J].应用科学学报,1997,15(1):82-88. |
| |
| 作者姓名： | 于宗光 魏同立 |
| |
| 作者单位： | 华晶集团中央研究所(于宗光，许居衍，王鸿宾)，东南大学(魏同立) |
| |
| 摘 要： | 建立了双层多晶硅ｆｌｏｔｏｘＥＥＰＲＯＭ存储管的阈值电压模型。利用该模型研究了擦／写阈值与擦／写时间、编程电压、隧道孔面积、隧道氧化层厚度的关系。模拟结果和实验结果基本一致。该阈值电压模型为ＥＥＰＲＯＭ单元的优化设计提供了一种快速、简便、实用的准则。
|
| 关 键 词： | 浮栅隧道氧化物 EEPROM 只读存贮器 双层多晶硅 |
OPTIMIZA TION DESIGN OF TWO-POLY SILICONFLOTOX EEPROM CELL |
| |
| Yu ZoNGGUANG,Xu JUYAN,WANG,HONGBIN.OPTIMIZA TION DESIGN OF TWO-POLY SILICONFLOTOX EEPROM CELL[J].Journal of Applied Sciences,1997,15(1):82-88. |
| |
| Authors: | Yu ZoNGGUANG Xu JUYAN WANG HONGBIN |
| |
| Abstract: | la this paper, the model of two-polysilicon folotox EEPROM threshold voltage model has been established . Then , the relatioa between erase/write tbredbold voltage and erase/write time, programing voltage, tunnel area, folox thickness have been studied based on this model. Tbe two-polysilicon fotox EEPROM cell has beea designed The experiment reaults are approximately- concordant with the sizaulation results. So, the thresbold model can be used as a fast, sim ple, actual ruler for EEPROM cell optimization deaign. |
| |
| Keywords: | floating-gate tunnel oxide EEPROM threshold voltage model |
| 本文献已被 CNKI 维普 等数据库收录！ |
