| 两种载流子发射的CC-DLTS信号分析及其应用 |
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| 引用本文： | 赵冷柱,吴克勤.两种载流子发射的CC-DLTS信号分析及其应用[J].应用科学学报,1986,4(4):373-376. |
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| 作者姓名： | 赵冷柱 吴克勤 |
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| 作者单位： | 上海科学技术大学 |
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| 摘 要： | 界面态由于直接影响了MOS器件的阈值电压,沟道迁移率,频率特性而具有实际意义.最近M.Sohulz等1]提出的恒电容深能级瞬态谱仪技术(CC-DLTS)引起人们极大兴趣.
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| 收稿时间： | 1984-01-12 |
| 修稿时间： | 1984-05-25 |
THE CC-DLTS SIGNAL ANALYSIS OF TWO KINDS OF CARRIERS EMISSION AND ITS APPLICATION |
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| ZHAO LENGCHU,WU KEGIN.THE CC-DLTS SIGNAL ANALYSIS OF TWO KINDS OF CARRIERS EMISSION AND ITS APPLICATION[J].Journal of Applied Sciences,1986,4(4):373-376. |
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| Authors: | ZHAO LENGCHU WU KEGIN |
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| Institution: | Shanghai University of Science and Technology |
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| Abstract: | A new analysis is developed for evaluating the interface state parameters using CC-DLTS technique. Comparing with M. Schulz's theory, it has following features:(1) Measurement range can be extended into inversion region; (2) Interface state parameters of two kinds of carriers, majority and minority, can be extracted from the measurement. |
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