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热壁外延法生长Zn1—xMnxSe半磁半导体薄膜
引用本文:王杰,吕宏强.热壁外延法生长Zn1—xMnxSe半磁半导体薄膜[J].应用科学学报,1992,10(2):161-166.
作者姓名:王杰  吕宏强
作者单位:复旦大学 (王杰,吕宏强,沈军,李哲深,王建宝),复旦大学(沈孝良)
摘    要:作者用热壁外延方法在(100)GaAs衬底上生长Zn_(1-x)Mn_xSe拉半磁半导体薄膜,并用X射线衍射(XRD)、喇曼散射、俄歇电子能谱(AES)等技术对薄膜性能作了研究.实验结果表明已成功地生长出(100)Zn_(1-x)Mn_xSe单晶薄膜,其中x最大达到0.17.

关 键 词:薄膜  热壁外延  半磁半导体  ZnMnSe

GROWTH OF Zn_(1-x)Mn_xSe FILMS BY HOT WALL EPITAXY ON GaAs SUBSTRATE
WANG JIE Lu HONGQIANG SHEN JTJN Li ZHESHEN WANG JIANBAO SHEN XIAOLIANG.GROWTH OF Zn_(1-x)Mn_xSe FILMS BY HOT WALL EPITAXY ON GaAs SUBSTRATE[J].Journal of Applied Sciences,1992,10(2):161-166.
Authors:WANG JIE Lu HONGQIANG SHEN JTJN Li ZHESHEN WANG JIANBAO SHEN XIAOLIANG
Institution:Fudan University
Abstract:Zn1-xMNxSe films are grown on the (100) GaAs substrate by hot wall epitaxy. The films are studied by X-ray diffraction, Raman and AES. The results show thai Single crystal (100)Zn1-xMnxSe films have been gotten and that x can be up to 0.17.
Keywords:hot wall epitaxy  Zni_(1-x)Mn_xSe films  diluted magnetic semiconductors    
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