| 用于低阻半导体器件结电容测量的混频-锁相检测技术 |
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| 引用本文： | 王继元,凌仲赓.用于低阻半导体器件结电容测量的混频-锁相检测技术[J].应用科学学报,1984,2(1):67-74. |
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| 作者姓名： | 王继元 凌仲赓 |
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| 作者单位： | 中国科学院上海技术物理研究所 |
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| 摘 要： | 本文提出一种利用低频锁相放大器测量高频信号的混频-锁相检测技术.将这一技术用于低阻半导体器件的结电容测量,获得了满意的结果.测量装置的工作频率在400千赫~4兆赫间连续可调,可以测出结电阻低到50欧姆的器件的结电容.文中列出了碲镉汞光电二极管结电容的测量结果.
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| 收稿时间： | 1982-04-19 |
MIX LOOKIN DETECTION TECHNIQUE FOR LOW RESISTANCE DEVICE JUNCTION CAPACITANCE MEASUREMENTS |
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| WANG JIYUAN,LING CHENGENG.MIX LOOKIN DETECTION TECHNIQUE FOR LOW RESISTANCE DEVICE JUNCTION CAPACITANCE MEASUREMENTS[J].Journal of Applied Sciences,1984,2(1):67-74. |
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| Authors: | WANG JIYUAN LING CHENGENG |
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| Institution: | Shanghai Institute of Technical Physics, Academia Sinica |
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| Abstract: | The mix-lookin detection technique for high frequency signal measurement with low frequency look-in amplifier is presented. This technique being used for junction capacitance measurements of low resistance semicondnetor deoices. satisfied results are obtained. The operatinal frequency of this apparatus is continuously tunable within 400 kHz-4 MHz nange. The junction capacitance of devices, which junction resistance is as low as 50 ohm, can be measured. The measurement results for Hg Cd Te photodiodes are presented. |
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