| 单一相Ca_2Si膜选择性生长(英文) |
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| 引用本文： | 杨吟野,谢泉.单一相Ca_2Si膜选择性生长(英文)[J].黑龙江大学自然科学学报,2010,27(4). |
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| 作者姓名： | 杨吟野 谢泉 |
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| 作者单位： | 1. 贵州大学,电子科学与信息技术学院,贵阳,550025;贵州民族学院,物理系,贵阳,550025
2. 贵州大学,电子科学与信息技术学院,贵阳,550025 |
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| 基金项目： | the Foundation of the National Natural Science Foundation of China，the Science Technology Department of Guizhou Province，the Key Foundation of Education Department of Guizhou，the Specific Foundation of the High-level Talents of Guizhou Province，the Carving out Foundation of University Man of Science and Technology Office of Guiyang |
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| 摘 要： | 磁控溅射系统在恒定溅射功率、Ar气压和Ar气流流量下,直接在Si(100)衬底上沉积两组不同沉积结构的Ca膜。随后,600℃分别真空退火5、6、8、10和12 h。使用XRD、EDAX和FT-IR对结果膜的结构和表面进行了测试。沉积膜的原子与衬底之间利用固相间相互扩散反应从多相共生的Ca -Si系统选择性的生长出单一相的Ca2Si膜。并且确定了沉积膜的结构、退火温度和退火时间是单一相硅化物选择性生长的关键因素。
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| 关 键 词： | 半导体硅化物 磁控溅射 晶核形成 |
Ca2Si crystal grown selectively by R.F.MS |
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| YANG Yin-ye,XIE Quan.Ca2Si crystal grown selectively by R.F.MS[J].Journal of Natural Science of Heilongjiang University,2010,27(4). |
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| Authors: | YANG Yin-ye XIE Quan |
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| Abstract: | The two groups of Ca films were directly and respectively deposited on Si(100)substrates by Radio Frequency(RF.)magnetron sputtering system(MS)and subsequent were annealed at 600 ℃for 5 h,6 h,8 h,10 h and 12 h in a vacuum furnace.The structural and morphological features of the resultant films are tested by XRD,EDAX and FT-IR.The cubic phase Ca2Si film is grown selectively from Ca-Si system of the existence of multiple silicide phases by an interdiffusion reaction of solid phase between the deposited particles and clusters and substrate constituents.And,the structure of the deposited films,annealing temperature and annealing time are the principal factor for the selective growth. |
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| Keywords: | Ca2Si |
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