单晶硅微尺度侧磨表面质量影响因素试验研究

为了获得具有较好表面质量的典型硬脆材料单晶硅微结构,采用微尺度磨削技术,利用直径为0.9 mm的微磨棒沿单晶硅(100)晶面进行磨削.首先通过三因素五水平的正交试验分析出影响单晶硅微尺度磨削表面粗糙度的主次因素;其次优化出获得较小表面粗糙度的单晶硅微尺度磨削工艺;最后通过单因素试验研究单晶硅微磨削表面粗糙度(Ra)随工艺参数的变化规律.结果表明:在沿单晶硅(100)晶面的微磨削过程(20 000 r/min≤v_s≤60 000 r/min,20μm/s≤v_w≤170μm/s和3μm≤a_p≤15μm)中,主轴转速对R_a影响最大;当主轴转速(v_s)为50 000 r/min、进给速度(v_w)为20μm/s、磨削深度(a_p)为3μm时,R_a最小;R_a随vs的增大基本呈减小趋势,但v_s过大时机床主轴出现振动,R_a出现增大趋势.R_a随v_w和a_p的增大而增大.

Experimental Study on Influencing Factor of Surface Quality in Micro Side Grinding of Single Crystal Silicon

To obtain the microstructure of single crystal silicon with a good surface quality， the single crystal silicon was grinded along the (100) crystal plane with microscale grinding technology by using microgrinding tool with diameter of 0.9 mm. Firstly， the main influence factors on microgrinding surface roughness of single crystal silicon were analyzed by the orthogonal experiment with three factors and five levels. Then， the microgrinding process was optimized to obtain minimum surface roughness. Lastly， the effect of process parameters on the surface roughness (R_○a) of microgrinding single crystal silicon was analyzed through single-factor experiment. The results show that: in the microgrinding process (20000r/min≤v_○s≤60000r/min， 20μm/s≤v_○w≤170μm/s and 3μm≤a_○p≤15μm) along (100) crystal plane of single crystal silicon， the influence of spindle speed on R_○a was maximum; when the spindle speed (v_○s) was 50000r/min， feeding rate (v_○w) was 20μm/s， grinding depth (a_○p) was 3μm， R_○a was minimum; R_○a reduces basically with the increase of v_○s， but if v_○s was too large， the spindle appeared vibration， R_○a showed the tendency of increase. R_○a raises with the increase of v_○w and a_○p.