Eu-Ru共掺NiO-SnO2复合纳米粒子薄膜的阻变特性

通过低温水浴法制备了Eu-Ru共掺杂NiO-SnO2复合纳米粒子，透射电镜图像显示纳米粒子粒径均匀，选区电子衍射表明结晶性差，所测晶面间距与SnO2和NiO相应卡片数据一致，水热机理分析表明纳米粒子由NiO-SnO2微观p-n结组成.原子力显微镜测试薄膜表面平均粗糙度约025nm，由于薄膜太薄及样品结晶性差，XRD分析未见明显衍射峰.电学测试表明纳米粒子薄膜具有可重复双极阻变特性，阈值电压约1V，开关比约500.薄膜高阻态电学输运符合缺陷俘获载流子所致空间电荷限制导电机制，低阻态呈欧姆特性，故阻变机理应为电荷俘获及再释.

Resistive Switching of Eu Ru Co doped NiO SnO2 Composite Nanoparticle Thin Films

Eu Ru co doped NiO SnO2 composite nanoparticle thin films were prepared using sol hydrothermal spin coating method. The film structural and electrical properties were characterized by transmission electron microscopy， atomic force microscopy and current voltage measurements. The results indicate that the film surfaces are flat and smooth with average roughness of about 025nm. The data of Miller indices and interplanar spacings from the selected area electron diffraction are consistent with that from the XRD card of NiO or SnO2， and the hydrothermal mechanism also shows that nanoparticles are composed of microscale p n junctions of NiO SnO2. The nanoparticle films exhibit reproducible resistive switching with threshold voltage of about 1V and on/off ratio of 500. The current voltage measurements indicate that the conduction is governed by the Ohmic law for the low resistive state， while the high resistive state is dominated by the space charge limited conduction. The switching mechanism can be ascribed to the charge trapping/detrapping process induced by the applied threshold electrical field.