| 缓冲层对AZO薄膜的性能影响 |
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| 引用本文： | 李长山,赵鹤平,肖立娟,郝嘉伟.缓冲层对AZO薄膜的性能影响[J].吉首大学学报(自然科学版),2013,34(3):31-34. |
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| 作者姓名： | 李长山 赵鹤平 肖立娟 郝嘉伟 |
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| 作者单位： | （吉首大学物理与机电工程学院，湖南 吉首 416000） |
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| 基金项目： | 湖南省自然科学基金资助项目（09JJ6011）；湖南省高等学校科研基金资助项目（08A035）；湖南省研究生科研创新项目（CX2011B399） |
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| 摘 要： | 采用射频磁控溅射法分别在ZnO缓冲层和Al2O3缓冲层上制备Al掺杂ZnO(AZO)薄膜，利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）、紫外-可见分光光度计、霍尔测试仪等仪器对薄膜的光电特性进行表征.XRD分析结果表明，加入缓冲层的薄膜具有更好的c轴择优取向，薄膜的表面平整，结晶质量有所改善，薄膜在可见光范围内的平均透过率超过80%.引入ZnO缓冲层制备的AZO薄膜的最低电阻率为5.8×10-4 Ω·cm，导电性能得到明显提高.
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| 关 键 词： | AZO薄膜 缓冲层 透过率 光电特性 |
Effect of Buffer Layers on the Properties of Al-Doped ZnO Films |
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| LI Chang-Shan,ZHAO He-Ping,XIAO Li-Juan,HAO Jia-Wei.Effect of Buffer Layers on the Properties of Al-Doped ZnO Films[J].Journal of Jishou University(Natural Science Edition),2013,34(3):31-34. |
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| Authors: | LI Chang-Shan ZHAO He-Ping XIAO Li-Juan HAO Jia-Wei |
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| Institution: | (College of Physics and Electronic Engineering,Jishou University,Jishou 416000,Hunan China） |
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| Abstract: | AZO films with Al2O3 and ZnO buffer layers were deposited by RF magnetron sputtering.The structure and optoelectronic properties of AZO films were analyzed by some characterization instruments,such as X-ray diffractometer (XRD),scanning electron micro-scope (SEM),UV-visible spectrophotometer,Hall test.The results show that the films with buffer layers have better c-axis preferred orientation,and smooth surface.The crystal quality has been improved.The transmittance of films is over 80% in the visible range.AZO films deposited on ZnO buffer layer have the lowest resistivity of 5.8×10－4 Ω·cm,and the conductive property of the films is improved obviously. |
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| Keywords: | AZO thin film buffer layer transmittance optoelectronic properties |
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