| 温度对硅纳米线生长结构的影响 |
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| 引用本文： | 李梦轲,刘俊,金红,丁圣.温度对硅纳米线生长结构的影响[J].辽宁师范大学学报(自然科学版),2007,30(2):172-174. |
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| 作者姓名： | 李梦轲 刘俊 金红 丁圣 |
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| 作者单位： | 辽宁师范大学,物理与电子技术学院,辽宁大连116029 |
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| 基金项目： | 中国博士后基金会资助项目（2004036387）;辽宁省教育厅科学基金资助项目（20040203）. |
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| 摘 要： | 以硅烷为反应气体，温度为850～1100℃，在（100）取向的单晶硅片上，采用化学气相沉积法生长了一维硅纳米线．用扫描电子显微镜观察了硅纳米线的表面形貌，用X射线衍射仪研究了硅纳米线生长结构与反应温度的关系．分析了不同实验条件对硅纳米线生长结构的影响，并对一维硅纳米线与块体硅的光致发光（PL）特性进行了分析比较．
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| 关 键 词： | 硅纳米线 化学气相沉积 温度 生长结构 光致发光 |
| 文章编号： | 1000-1735（2007）02-0172-03 |
| 修稿时间： | 2006-06-07 |
The effect of depositing temperature on growth structure and characters of silicon nanowires |
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| LI Meng-ke,LIU Jun,JIN Hong,DING Sheng.The effect of depositing temperature on growth structure and characters of silicon nanowires[J].Journal of Liaoning Normal University(Natural Science Edition),2007,30(2):172-174. |
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| Authors: | LI Meng-ke LIU Jun JIN Hong DING Sheng |
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| Institution: | School of Physics and Electron Technology, Liaonlng Normal University, Dalian 116029, China |
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| Abstract: | By using chemical vapor deposition(CVD) method,silicon nanowires(SiNWs) have been synthesized on single crystal silicon(100) wafers.The SiH4 gas served as a silicon source for the growth of SiNWs.The morphology of prepared SiNWs were studied by scanning electron microscopy(SEM),the growth microstructures of fabricated SiNWs were analyzed by X-ray diffraction(XRD) spectrum and selected-area electron diffraction(SAED) method.The effect of depositing temperature parameters on growth microstructure have been analyzed and discussed.The photoluminescence spectra reveal that SiNWs have a stronger light-emission than bulk silicon. |
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| Keywords: | silicon nanowires chemical vapor deposition temperature growth structure photoluminescence |
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