| Au/Ge/SiO2/p-Si结构中的电流输运特性 |
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| 引用本文： | 陈彦,马书懿.Au/Ge/SiO2/p-Si结构中的电流输运特性[J].西北师范大学学报,2006,42(6):44-47. |
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| 作者姓名： | 陈彦 马书懿 |
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| 作者单位： | 西北师范大学物理与电子工程学院 甘肃兰州730070 |
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| 基金项目： | 教育部科学技术研究重点项目;甘肃省教育厅科研项目;甘肃省重点实验室基金 |
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| 摘 要： | 用射频磁控溅射双靶交替淀积的方法在p-Si(100)衬底上制备了Ge/SiO2薄膜,利用Au/Ge/SiO2/p-Si结构的I-V特性曲线研究了该结构的电流输运机制.分析表明,在较低的正向偏压和反向偏压下,电流输运机制分别为Schottky发射和欧姆输运电流;而在较高的正向偏压下,Frenkel-Poole发射和空间电荷限制电流两种机制共同作用.
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| 关 键 词： | Ge/SiO2薄膜 射频磁控溅射 电流输运 |
| 文章编号： | 1001-988X（2006）06-0044-04 |
| 收稿时间： | 2006-05-25 |
| 修稿时间： | 2006-09-28 |
Carrier transport property of Au/Ge/SiO2/p-Si structure |
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| CHEN Yan,MA Shu-yi.Carrier transport property of Au/Ge/SiO2/p-Si structure[J].Journal of Northwest Normal University Natural Science (Bimonthly),2006,42(6):44-47. |
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| Authors: | CHEN Yan MA Shu-yi |
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| Institution: | College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, Gansu, China |
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| Abstract: | Ge/SiO_2 film is deposited on p-Si(100)substrate by two-target alternation RF magnetron sputtering technique.Carrier transport mechanism of Au/Ge/SiO_2/p-Si structure is studied by using its(I-V) curve.The analysis shows that Schottky emission mechanism and ohmic conduction contribute to the current in the film under the lower forward biases and the lower reverse biases respectively,while the current is induced mainly by Frenkel-Poole emission mechanism and space-charge-limited current under the higher forward biases. |
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| Keywords: | Ge/SiO_2 film RF magnetron sputtering carrier transport |
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