| 基于横场Ising模型插层铁电薄膜相变性质数值计算 |
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| 引用本文： | 朱赛宁,赵金茹,顾爱军.基于横场Ising模型插层铁电薄膜相变性质数值计算[J].河南师范大学学报(自然科学版),2010,38(6). |
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| 作者姓名： | 朱赛宁 赵金茹 顾爱军 |
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| 摘 要： | 基于横场伊辛模型的平均场近似理论讨论了铁电薄膜(中间具有不同材料插入层)二级相变性质.运用该理论,首次推导得到了一个可用于研究任意层数铁电薄膜(中间具有不同插入材料层)的相变性质的递归公式.并运用该公式研究了体材料(A)和插层材料(B)的交换相互作用参量和横场参量对相图的影响.计算结果表明,由于插层材料B参数值的变化,整个铁电薄膜相变性质,不同铁电薄膜层的极化,横场参量过渡值均敏感的发生变化.
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| 关 键 词： | 铁电薄膜 插层 相图 伊辛模型 |
Numerical Calculation of Ferroelectric Thin Film with Distinct Inserting-layer Under Transverse Lsing Model |
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| ZHU Sai-ning,ZHAO Jing-ru,GU Ai-jun.Numerical Calculation of Ferroelectric Thin Film with Distinct Inserting-layer Under Transverse Lsing Model[J].Journal of Henan Normal University(Natural Science),2010,38(6). |
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| Authors: | ZHU Sai-ning ZHAO Jing-ru GU Ai-jun |
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| Abstract: | The phase transition properties of the ferroelectric thin film(with one distinct inserting-layer in the middle) are studied under the transverse Ising model by the mean-field approximation.By treating with the determinant equation,one recursive equation for the phase transition properties of the ferroelectric thin film with one distinct inserting-layer in the middle is obtained.The effect of the exchange interaction and transverse field parameters of bulk materials(A) and inserting-layer material(B) on the phase diagrams is investigated with this recursive equation.The results show that with the modification of the parameter values of the inserting-layer B,the properties of the phase transition,the polarizations of different layers and the crossover value of the transverse field change sensitively. |
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| Keywords: | ferroelectrics inserting-layer phase diagrams ising model |
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