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新型存储材料BIT铁电薄膜B位双掺杂初探
引用本文:胡增顺,晋玉星,杨桦.新型存储材料BIT铁电薄膜B位双掺杂初探[J].开封大学学报,2012,26(1):73-76.
作者姓名:胡增顺  晋玉星  杨桦
作者单位:1. 开封大学公共计算机教研部,河南开封,475004
2. 开封大学公共计算机教研部,河南开封475004/开封大学软件职业技术学院,河南开封475004
基金项目:河南省教育厅自然科学研究计划项目(2011CA30002)
摘    要:利用化学溶液沉积法,在Pt/Ti/SiO2/Si(100)基底上和700℃条件下分别制备了Nd和(Al,Sc)共掺杂的钛酸铋薄膜(Bi3.15,Nd0.85)(Ti3-x(Alx,scx))O12记做BNT(AI(x),sc(x))](x=0.015,0.030,0.045,0.060),并进行了这一系列薄膜的微结构、表面形貌、铁电等特性的研究.发现当掺杂含量为x=0.030时,薄膜具有较高的剩余极化强度(2Pr=24.80/2C/cm2).讨论了相关的物理机制.

关 键 词:铁电薄膜  共掺杂  BNT(Al(X),Sc(x))  化学溶液沉积法

Study of New Memory Materials of B Site Cosubstituted BIT Ferroelectric Films
HU Zeng-shun,JIN Yu-xing,YANG Hua.Study of New Memory Materials of B Site Cosubstituted BIT Ferroelectric Films[J].Journal of Kaifeng University,2012,26(1):73-76.
Authors:HU Zeng-shun  JIN Yu-xing  YANG Hua
Institution:1 a. Department of Public Computer ; lb. Department of Software Technology,Kaifeng University, Kaifeng 475004, Henan )
Abstract:A series of Nd and ( Al, Sc ) eosubstituted bismuth titanate films of ( Bi3.15 Nd0.85 ) ( Ti3-X ( Alx, Sex) ) O12 { BNT{ AI( x} ,Sc(x) ) { x =0.015,0. 030,0. 045,0.060} have been prepared on Pt/Ti/SiO2/Si( 100) substrates at 700℃ by a chemical solution deposition technique, respectively. The structural evolution and ferroelectric properties of the as-deposited films were sys- tematically investigated as a function of ( Al, Sc ) composition x. It was found that an optimized ( Al, Sc ) content,x = 0. 030, can greatly enhance the remnant polarization ( 2Pr = 24. 80μC/cm2 ) . The relevant physical mechanisms were discussed.
Keywords:ferroelectric films  cosubstitution  BNT ( Al ( x )  Sc ( x ) )  chemical solution deposition
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