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| ULSI碱性抛光液对铜布线平坦化的影响研究 | |
| 引用本文： | 唐心亮,智兆华,刘玉岭,胡 轶,刘效岩,王立冉.ULSI碱性抛光液对铜布线平坦化的影响研究[J].河北科技大学学报,2011,32(4):380-383. |
| 作者姓名： | 唐心亮 智兆华 刘玉岭 胡 轶 刘效岩 王立冉 |
| 作者单位： | 1. 河北科技大学人事处,河北石家庄050018;河北工业大学微电子技术与材料研究所,天津300130 2. 河北科技大学机械电子工程学院,河北石家庄,050018 3. 河北工业大学微电子技术与材料研究所,天津,300130 |
| 基金项目： | 国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308) |
| 摘 要： | 研究了铜化学机械平坦化的模型.通过研究分析,采用40 nm粒径的硅溶胶作为磨料,H2O2作为氧化剂,还包含螯合剂和FA/O表面活性剂作为抛光液.分析了工艺条件(包括压力、流量、转速、温度等)和抛光液(H2O2、有机碱、磨料粒径)对抛光过程的影响.通过实验结果,确定了相应的实验条件和抛光液来解决铜化学机械抛光过程中出现的... |
| 关 键 词： | 碱性抛光液 工艺参数 铜布线平坦化 化学机械抛光 |
| 收稿时间： | 2011/3/29 0:00:00 |
| 修稿时间： | 2011/4/8 0:00:00 |
Study on effect of alkaline slurry on copper planarization in ULSI |
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| TANG Xin-liang,ZHI Zhao-hu,LIU Yu-ling,HU Yi,LIU Xiao-yan and WANG Li-ran.Study on effect of alkaline slurry on copper planarization in ULSI[J].Journal of Hebei University of Science and Technology,2011,32(4):380-383. | |
| Authors: | TANG Xin-liang ZHI Zhao-hu LIU Yu-ling HU Yi LIU Xiao-yan and WANG Li-ran |
| Institution: | TANG Xin-liang1,2,ZHI Zhao-hua3,LIU Yu-ling2,HU Yi2,LIU Xiao-yan2,WANG Li-ran2(1.Personnel Department,Hebei University of Science and Technology,Shijiazhuang Hebei 050018,China,2.Institute of Microelectronic Technology and Materials,Hebei University of Technology,Tianjin 300130,3.College of Mechanical and Electronic Engineering,China) |
| Abstract: | In this article,the mechanism model of Cu-CMP is studied.A kind of slurry is excogitated,which uses colloidal silica with diameter of 40 nm as abrasives,hydrogen peroxide as oxidant,organic alkali as pH modulator and chelating agent,FA/O as surfactant.The influences of process conditions,including pressure,flow rate,rotary speed and temperature,etc.,and polish slurry(H2O2,organic alkali,abrasive particle) on copper polishing rate are investigated.Based on these resuls,the appropriate process conditions and ... |
| Keywords: | alkaline slurry technique parameter copper planarization chemical mechanical polishing(CMP) |
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