电子隧道效应新释

用经典物理的办法解释了电子隧道效应，认为电子隧道效应是导体中的自由电子扩散到绝缘层中，使得绝缘层中的价电子能态升高，由束缚态（局域态）转变成自由态（公有化态），从而参与裁流的现象：导体中的自由电子扩散到绝缘层中，由于库仑斥力的作用，使得绝缘层中的价电子在晶格势场中的能态升高，降低了势垒高度，同时，由于载流子定向运动产生的霍尔电场对价电子做功及电流产生的焦耳热也使得价电子能态升高。在三个因素的影响之下，绝缘层中价电子能态升高，由局域态转变成自由状态，从而参与载流。根据绝缘层厚度和隧道效应的尺寸，可以判定金属中价电子对绝缘层中价电子的作用范围大约是十几A的限度．

New Definition of Electronic Tunneling Effectiveness

Electronic tunneling effect have been defined by using classical physics method, we considers the electronic tunneling effect as a phenomenon that conductor＇s free electrons diffusing into insulated layer elevate the energy state of valence electrons from bond state（local state） to free state （public state）, enable them to participate into the course of electric currency carrying. Under the effect of Coulomb repulsion, the free electrons of conductor which diffuse into insulated layer elevate the energy state of valence electrons in the lattice power field and then lower down the barrier height. However, the Hall field generated by the carriers＇ orientation movement and Joule heat generated by the electric currency can also elevate the energy state of valence electrons. Under the cooperative effect of the factors above, the energy state of valence electrons of insulated layer is elevated from bond state to free state to participate into the course of electric currency carrying. According to the thickness of insulated layer and the size of tunneling effect, the scope of the effect that medal valence electrons have on insulated layer＇s valence electrons can be judged as between 10 and 20 A.