非极性纳米线压电电子和压电光电子学效应的研究进展

压电极化和半导体特性之间的耦合因具有独特的物理性质而引起了人们的关注，并由此兴起了一些新的研究领域(如压电电子学和压电光电子学).文章回顾了压电效应和压电光电子学效应对金属/半导体(M/S)和p-n结的影响，详细介绍了c轴和a轴压电电子和压电光电子学研究的基本进展和应用探索. c轴纳米结构中的压电效应是界面效应，它利用在纳米结构的局部M/S接触处或同质/异质结处产生的压电极化来控制载流子跨界面传输，并通过光感应载流子进行相应的光电过程.在非极性a轴纳米线中，外部应变感应的压电电荷沿整个极性表面分布，方向垂直于纳米线.压电半导体的电荷载流子传输过程在整个纳米结构体内受到压电效应的调节.

Progress in the Research on the Piezotronic and Piezo-Phototronic Effects of Non-Polar Nanowires

The coupling between piezoelectric polarization and semiconductor properties has unique physical properties, and as a result, some new research fields such as piezoelectric electronics and piezoelectric optoelectronics have emerged, which has attracted attention. The article reviews the pressure effects of electrical and piezoelectric optoelectronics on metal/semiconductor(M/S) and p-n junctions, introducing the basic progress in the research on c-axis and a-axis piezoelectric electronics and piezoelectric optoelectronics and their application. The piezoelectric effect in c-axis nanostructures is an interface effect. It uses the piezoelectric polarization generated at the local M/S contact or the homo/heterojunction of the nanostructure to control the carrier across the interface. Transmission and the corresponding optoelectronic process is performed by photo-induced carriers. In non-polar a-axis nanowires, external strain-induced piezoelectric charges are distributed along the entire polar surface and across the nanowires width. The charge carrier transport process of a piezoelectric semiconductor is regulated by the piezoelectric effect throughout the nanostructure.