| 微重力条件下的InxGa1-xSb晶体生长研究 |
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| 引用本文： | 方婧红,夏朝阳,王慧,张阳,汪超越,贺欢,倪津崎,李勤,KUMAR VeluNirmal,INATOMI Yuko,HAYAKAWA Yasuhiro,OKANO Yasunori,余建定.微重力条件下的InxGa1-xSb晶体生长研究[J].中国科学:物理学 力学 天文学,2020(4):51-61. |
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| 作者姓名： | 方婧红 夏朝阳 王慧 张阳 汪超越 贺欢 倪津崎 李勤 KUMAR VeluNirmal INATOMI Yuko HAYAKAWA Yasuhiro OKANO Yasunori 余建定 |
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| 作者单位： | 中国科学院上海硅酸盐研究所;中国科学院大学;Institute o f Space and Astronautical Science;School of Physical Sciences;Research Institute o f Electronics;Graduate School of Engineering Science |
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| 基金项目： | 中国科学院空间科学战略性先导科技专项(编号:XDA15051200);上海市青年科技英才扬帆项目(编号:17YF1421500)资助。 |
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| 摘 要： | InxGa1-xSb晶体是吸收波长可以在1.7–6.8μm范围内调控的三元半导体晶体,在红外探测、热光伏电池领域具有重要的应用前景,但由于其固液相线相距很远,容易形成成分偏析和结晶缺陷,且重力对流会增加晶体生长界面处物质输送的不均匀性,使得地面环境下难于生长高质量的InxGa1-xSb晶体.微重力环境由于抑制了自然对流,为晶体生长提供了良好条件,本文综述了微重力环境对InxGa1-xSb半导体晶体成分偏析和晶体缺陷的影响,并介绍了中国返回式微重力科学卫星实践十号上的InxGa1-xSb三元晶体的空间生长实验成果.
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| 关 键 词： | InxGa1-xSb 微重力 晶体生长 |
Study on crystal growth of InxGa1-xSb under microgravity |
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| FANG JingHong,XIA Zhao,Yang,WANG Hui,ZHANG Yang,WANG ChaoYue,HE Huan,NI JinQi,LI Qin,KUMAR VeluNirmal,INATOMI Yuko,HAYAKAWA Yasuhiro,OKANO Yasunori,YU JianDing.Study on crystal growth of InxGa1-xSb under microgravity[J].Scientia Sinica Pysica,Mechanica & Astronomica,2020(4):51-61. |
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| Authors: | FANG JingHong XIA Zhao Yang WANG Hui ZHANG Yang WANG ChaoYue HE Huan NI JinQi LI Qin KUMAR VeluNirmal INATOMI Yuko HAYAKAWA Yasuhiro OKANO Yasunori YU JianDing |
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| Institution: | (Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai 200050,China;University of Chinese Academy of Sciences,Beijing 100049,China;Institute of Space and Astronautical Science,Japan Aerospace Exploration Agency,Kanagawa 252-5210,Japan;School of Physical Sciences,SOKENDAI(The Graduate University for Advanced Studies),Kanagawa 252-5210,Japan;Research Institute of Electronics,Shizuoka University,Shizuoka 432-8011,Japan;Graduate School of Engineering Science,Osaka University,Osaka 560-853J,Japan) |
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| Abstract: | InxGa1-xSb is a ternary alloy with tunable properties. The wavelength of InxGa1-xSb can be varied in the range of 1.7–6.8 μm, which is in the infrared(IR) region and makes that InxGa1-xSb can be used as a substrate for IR detector and thermophotovoltaic(TPV). The phase diagram reveals that there is a large temperature gap between liquidus and solidus lines, which leads to constitutional supercooling and the formation of crystal defects during the solidification process of In Ga Sb crystal. Moreover, convection caused by gravity will increase the inhomogeneity of transport in the liquid region near the crystal growth interface, which makes it quite difficult to grow InxGa1-xSb crystal. The convection will be restrained in microgravity environment, and thus, it is very beneficial for crystal growth. This article introduces the effect of microgravity on the growth of InxGa1-xSb crystal and the results of the space growth experiment of InxGa1-xSb ternary crystal with a high concentration of In in SJ10 recoverable scientific experimental satellite. |
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| Keywords: | InxGa1-xSb microgravity crystal growth |
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