| 表面粗糙化来提高SiO2中纳米硅的拉曼强度 |
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| 引用本文： | 张有为,毕大炜,公祥南,边惠,万里,唐东升.表面粗糙化来提高SiO2中纳米硅的拉曼强度[J].中国科学:物理学 力学 天文学,2011(7):845-849. |
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| 作者姓名： | 张有为 毕大炜 公祥南 边惠 万里 唐东升 |
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| 作者单位： | [1]浙江温州大学物理与电子信息工程学院,温州325035 [2]信息功能材料国家重点实验室上海微系统与信息技术研究所,上海200050 [3]低维量子结构与调控教育部重点实验室湖南师范大学,湖南410081 |
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| 基金项目： | 国家自然科学基金（批准号：60807002）和低维量子结构与调控教育部重点实验室（湖南师范大学）开放课题基金资助（编号：QSQCl008）资助项目 |
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| 摘 要： | 本文采用表面粗糙化的方法，在拉曼背散射配置下观察到SiO2中注入硅离子形成纳米硅的拉曼散射特征峰．运用声子限制模型对纳米硅的特征峰进行曲线拟合，得到纳米硅的平均晶粒尺寸是2．6nm．这个结果与透射电子显微镜直接观测的纳米硅尺寸非常符合．以上研究表明，表面粗糙化是一个非常有效的方法来提高拉曼散射强度，从而方便地研究纳米硅的拉曼特征，不会对纳米硅的物理性质发生影响．
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| 关 键 词： | 纳米硅 拉曼散射 声子限制 |
Enhancement of Raman scattering intensity of Si nanoparticles in SiO2 by using surface-roughening technique |
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| ZHANG YouWei,BI DaWei,GONG XiangNan,BIAN Hui,WAN Li,TANG DongSheng.Enhancement of Raman scattering intensity of Si nanoparticles in SiO2 by using surface-roughening technique[J].Scientia Sinica Pysica,Mechanica & Astronomica,2011(7):845-849. |
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| Authors: | ZHANG YouWei BI DaWei GONG XiangNan BIAN Hui WAN Li TANG DongSheng |
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| Institution: | l College of Physics and Electronic Information, Wenzhou University, Wenzhou 325035, China; 2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences, Shanghai 200050, China; 3 Key Laboratory of Low Dimensional Quantum Structures and Quantum Control (Hunan Normal University), Ministry of Education, Changsha 410081, China |
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| Abstract: | In this paper, we use surface-roughening technique to enhance the Raman scattering intensity of Si nanoparticles formed in SiO2 with Si ion implant. Phonon confinement model has been applied to calculate the size of Si nanoparticles by fitting the Raman results. The average particle size is obtained to be 2.6 nm, which is coincident to the result measured by Transmission Electron Microscopy. Therefore, surface-roughening technique is an effective method for the Raman measurement, which does not bring any influence to the original physics of the Si nanoparticles in SiO2. |
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| Keywords: | Si nanoparticle Raman scattering phonon confinement |
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