面向HgCdTe红外焦平面探测器应用的分子束外延材料研究进展

报道了针对第三代碲镉汞红外焦平面的应用需求进行的碲镉汞分子束外延研究进展.面向大规模HgCdTe红外焦平面探测器的应用,开展了大面积替代衬底上的分子束外延技术研究,报道了在大面积替代衬底上的碲镉汞分子束外延材料的晶体质量、表面形貌和组份均匀性的改善方法和研究结果.512×512及以上规模的中波、短波碲镉汞面阵器件制备验证表明Si基碲镉汞材料满足应用需求.围绕甚长波红外焦平面探测器及雪崩红外焦平面探测器的研制需要,开展了低缺陷的ZnCdTe基碲镉汞分子束外延研究.外延获得的HgCdTe外延材料均匀性得到明显提高.经过外延条件的优化,厚度为10μm的HgCdTe/ZnCdTe(组分x=0.22)分子束外延材料位错密度最好结果为3×104 cm-2,双晶半峰宽小于25弧秒.

Progress on HgCdTe MBE for the application of IRFPAs

The progress on molecularbeam epitaxial growth of HgCdTe focusing on the requirements by the 3rd generation of infrared focal plane arrays are described. As large format HgCdTe IRFPAs demanded, the efforts on HgCdTe MBE on large area alternative substrates were presented, such as the improvement of crystalline quality, surface morphology, as well as Cd composition umiformity. The device fabrication on 512×512 MW and SW IRFPAs well demonstrated the performance of HgCdTe epi-layer. The studies of HgCdTe MBE on lattice-match substrates also were described, which were essential for the fabrication of LW and APD HgCdTe detectors. After growth condition optimized, the uniformity of epi-layer was greatly improved. On 10 μm HgCdTe/ZnCdTe（x=0.22）, a typical value of FWHM of （422） X-ray diffraction was found to be less than 25 arcsec, as well as the best results of EPD reached 3×10^4 cm^-2.