P型ZnO：N薄膜的拉曼及光电特性研究

采用电子柬蒸发技术在石英衬底上制备了ZnO薄膜，以N离子注入的方式及后期退火处理实现N掺杂ZnO薄膜．借助拉曼散射光谱、透射光谱和霍尔测试等手段研究了ZnO：N薄膜的拉曼及光电特性．结果表明：所有样品均呈现ZnO纤锌矿结构，在ZnO：N薄膜拉曼光谱中发现与N相关的振动模式（位于272．5，505．1和643．6cm-），分析表明N已掺入ZnO薄膜中；霍尔测试表明，通过适当退火处理后，ZnO：N薄膜向P型转变，其空穴浓度为7．73x10^17cm-3，迁移率为3．46cm2V-1s-1，电阻率为2．34Ωcm．然而，长期进行霍尔跟踪测试发现ZnO：N薄膜的P型性能随时间并不稳定，结合拉曼散射光谱和第一性原理计算分析认为由于p-ZnO：N薄膜中存在残余压应力，同时薄膜中还出现了易补偿空穴的施主缺陷（N2）o是P型不稳定的根本原因．

The investigation on Raman, optical and electrical properties of p-type ZnO：N film

ZnO thin films were deposited on quartz glass substrates by e-beam evaporation method, and N dopant is realized by the method of the ions implantation together with thermal annealing. The Raman, optical and electrical properties of ZnO：N film were investigated by Raman scattering spectrum, transmittance spectra and Hall measurement system. The results indicate that all films perform the ZnO wurtzite structure. The modes at 272.5,505.1 and 643.6 cm-1 can be observed in the Raman spectra of the ZnO：N film, which can be used as an indicator of N incorporation into the ZnO film. Hall measurements show that ZnO：N film can become p-type after appropriate annealing in nitrogen atmosphere with a hole concentration of 7.73x1017 cm-3, a Hall mobility of 3.46 cm2 V-l s-1, and a resistivity of 2.34 Ωcm. However, it was noted that hole conductivity was not stable based on the Hall measurements for a long time. Combined the Raman scattering spectra with first principle calculation, it was concluded that the origin of the instability in ZnO：N resulted from the compressive stress caused by lattice misfit, as well as the compensation of the N-N pair at the oxygen site （N2）o.