| 基于纳米MOSFET噪声的背散射系数研究 |
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| 引用本文： | 贾晓菲,何亮.基于纳米MOSFET噪声的背散射系数研究[J].中国科学:物理学 力学 天文学,2014(2):185-193. |
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| 作者姓名： | 贾晓菲 何亮 |
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| 作者单位： | [1]安康学院电子与信息工程系,安康725000 [2]西安电子科技大学先进材料与纳米科技学院,西安710071 |
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| 基金项目： | 陕西省教育厅2013年科学研究计划（自然科学专项）（编号：2013K1115,12JK0971）、国家自然科学基金（批准号：61106062）、中央高校基本科研业务费专项资金（编号：K50511050007）和安康学院高层次人才科研专项经费科研项目（编号：AYQDzR201206）资助 |
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| 摘 要： | 传统噪声理论提取背散射系数时,引入的参量较多并依赖量子力学计算,或是采取大量的假设而使得到的结论存在偏差.本文将基于Navid模型推导MOSFET噪声的背散射系数,进一步得到了短沟道器件在线性区和饱和区的背散射系数,并给出测量背散射系数的方法.在此基础上,对背散射系数随沟道长度、偏置电压和温度的变化特性进行分析,除此之外,用实验和Monte Carlo模拟验证了背散射系数与偏置电压特性,该方法得到的背散射系数与各参量的变化特性与文献给出的结果相吻合.
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| 关 键 词： | 纳米MOSFET 背散射系数 散粒噪声 |
Research on backscattering coefficient based on nano-MOSFET noise |
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| JIA XiaoFei ＆ HE Liang.Research on backscattering coefficient based on nano-MOSFET noise[J].Scientia Sinica Pysica,Mechanica & Astronomica,2014(2):185-193. |
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| Authors: | JIA XiaoFei ＆ HE Liang |
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| Institution: | JIA XiaoFei ＆ HE Liang Department of Electronic and Information Engineering, Ankang University, Ankang 725000, China, 2 Advanced Materials and Nano Technology School, Xidian University, Xi＇ an 710071, China |
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| Abstract: | In the study of the backscattering coefficient by traditional noise theory, many parameters and quantum mechanical calculations are used, or deviations appear in conclusions due to a lot of assumptions. In the present work, based on the Navid model, the expressions of backscattering coefficient in nano-MOSFET are deduced, and the backscattering coefficient in the linear region and the saturation region are obtained, and gives the back-scattering coefficient measurement method. On this basis, the variations of backscattering coefficient with Channel length, temperature and voltage are analyzed. Furthermore, the variations of backscattering coefficient with voltage in the linear region and the saturation region are verified by experiments and Monte Carlo simulations. Our results are in accordance with other works. |
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| Keywords: | nano-MOSFET backscattering coefficient shot noise suppression |
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