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基于少子寿命测量研究晶硅电子态缺陷
引用本文:王佳俊,黄一龙,刘磊,余文君,李凤,李寒星.基于少子寿命测量研究晶硅电子态缺陷[J].东莞理工学院学报,2013(5):6-10.
作者姓名:王佳俊  黄一龙  刘磊  余文君  李凤  李寒星
作者单位:嘉兴学院数理与信息工程学院,浙江嘉兴314001
基金项目:嘉兴市科技局2011年科技项目(201lAY1037);嘉兴学院2012年重点SRT项目(85172089).
摘    要:基于瞬态微波光电导少子寿命测试仪和MATLAB编程研究了确定硅片的复合中心浓度和陷阱中心浓度的方法。利用瞬态微波光电导少子寿命测试仪,我们测量了硅片的少子寿命及微波光电导瞬态电压信号随时间的变化特性。根据已知的注入水平和相关复合参数,建立少子寿命与复合中心浓度的关系,我们得到硅片中的复合中心浓度。利用瞬态电压信号的时间变化特性与非平衡载流子浓度的时间衰减特性的关系,我们得到非平衡载流子浓度随时间的衰减曲线。结合非平衡载流子时间衰减特性曲线和陷阱模型表达式,利用MATLAB软件进行数值拟合得到了硅片的陷阱中心浓度。

关 键 词:少子寿命  复合中心  陷阱中心  微波光电导  钝化

Study on Electronic Defects of Silicon Based on the Measurement of Minority Carriers' Lifetime
WANG Jia-jun,HUANG Yi-long,LIU Lei,YU Wen-jun,LI Feng,LI Han-xing.Study on Electronic Defects of Silicon Based on the Measurement of Minority Carriers' Lifetime[J].Journal of Dongguan Institute of Technology,2013(5):6-10.
Authors:WANG Jia-jun  HUANG Yi-long  LIU Lei  YU Wen-jun  LI Feng  LI Han-xing
Institution:(College of Mathematics, Physics and Information Engi.eering, Jiaxing University, Jiaxing 314001, China)
Abstract:By using transient microwave photo -conductance technique and MATLAB software , we investigated the method of determining density of recombination centers and trapping centers .We measured the lifetime of minority carriers in silicon and the changing of microwave photo -conductance transient voltage with time .Based on the injection level and related parameters of recom-bination centers, we established the relationship of minority carriers ’ lifetime and recombination centers ’ density, and then obtained the density of recombination centers .Based on the relation between the changing of transient voltage and the decaying of minority carriers’ density, we obtained the decay curves of minority carriers ’ density with time.Based on the decay curves of minority carri-ers’ density with time and trapping model , we obtained the density of trapping centers by the usage of numerical fitting via MATLAB software .
Keywords:Minority carriers' lifetime  recombination centers  trapping centers  microwave photo-conductance  passivation
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