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| 硅纳米电极超低电压场致电离特性研究 | |
| 引用本文： | 陈云,张健,于江江,郑小东.硅纳米电极超低电压场致电离特性研究[J].华东师范大学学报(自然科学版),2013,2013(3):194-201. |
| 作者姓名： | 陈云 张健 于江江 郑小东 |
| 作者单位： | 1. 华东师范大学电子工程系,上海200241;南通大学电子信息学院,江苏南通226019 2. 华东师范大学电子工程系,上海,200241 |
| 基金项目： | 国家自然科学基金，南通市应用研究计划项目，南通大学自然科学基金项目 |
| 摘 要： | 用湿法化学刻蚀制备出具有直立结构的硅纳米线,其平均长度为20μm,平均直径100 nm.将该硅纳米线作为电容式电离结构的一维纳米电极,建立场致电离的测试系统,并在常温常压下测试出电离的全伏安特性,得出了一维纳米电极系统气体电离的规律.测试结果表明,利用湿法化学刻蚀制备的硅纳米线作为一维纳米电极,可以大大降低系统的击穿电压,原因在于它具有较高的场增强因子、小尺寸效应以及高的缺陷密度. |
| 关 键 词： | 硅纳米线 场致电离 击穿电压 湿法化学刻蚀 |
| 收稿时间： | 2012-09-01 |
Ultralow-voltage field ionization of silicon nano-electrode |
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| CHEN Yun , ZHANG Jian , YU Jiang-jiang , ZHENG Xiao-dong.Ultralow-voltage field ionization of silicon nano-electrode[J].Journal of East China Normal University(Natural Science),2013,2013(3):194-201. | |
| Authors: | CHEN Yun ZHANG Jian YU Jiang-jiang ZHENG Xiao-dong |
| Institution: | 1. Department of Electronic Engineering, East China Normal University, Shanghai 200241, China; 2. School of Electronics and Information, Nantong University, Nantong Jiangsu 226019, China |
| Abstract: | By using method of wet chemical etching, a kind of straight aligned silicon nanowires (SiNWs) was prepared, with average length and diameter about 20 μm and 100 nm, respectively. Then 1D SiNWs were used as the nano-electrode of capacitive ionization structure in a test system of ionization, to test the full volt ampere characteristics of ionization. The test results show that the as-grown SiNWs acting as one of the nano-electrode can reduce the breakdown voltage of power system greatly, because the as-grown SiNWs have large field enhancement factor, small size effect and high defect density. |
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