电子在掺杂GaAs/GaAlAs斐波那契量子阱中波函数和能量性质

本文利用转移矩阵和边界条件精确计算一维定态薛定谔方程,推导出一维斐波那契量子阱结构中电子波函数的计算条件.考虑了在势阱中掺杂的情况,并且认为势阱中掺杂仅仅只是改变势阱的宽度.在半导体材料的参数范围内,进一步研究了势阱宽度对一维掺杂斐波那契量子阱结构的电子能量本征值的影响.

The electronic energy properties of the doped GaAs/ GaAlAs fibonacci quantum wells structure

The eigen-wavefunction of the Fibonacci quantum well structure is presented based on an exact solution of the Schrodinger equation by using the transfer matrix approach and the boundary conditions. We consider the case where one of the potential well containing impurities for the Fibonacci quantum wells structure, and we think that the impurities merely changed the well width. For a selected range of parameters of semiconductor materials, the behavior of eigenenergy has been studied for the doped Fibonacci quantum well structure by changing the well width in the one of the potential well containing impurities.